FR2035028A1 - - Google Patents

Info

Publication number
FR2035028A1
FR2035028A1 FR7009076A FR7009076A FR2035028A1 FR 2035028 A1 FR2035028 A1 FR 2035028A1 FR 7009076 A FR7009076 A FR 7009076A FR 7009076 A FR7009076 A FR 7009076A FR 2035028 A1 FR2035028 A1 FR 2035028A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7009076A
Other languages
French (fr)
Other versions
FR2035028B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2035028A1 publication Critical patent/FR2035028A1/fr
Application granted granted Critical
Publication of FR2035028B1 publication Critical patent/FR2035028B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02GINSTALLATION OF ELECTRIC CABLES OR LINES, OR OF COMBINED OPTICAL AND ELECTRIC CABLES OR LINES
    • H02G3/00Installations of electric cables or lines or protective tubing therefor in or on buildings, equivalent structures or vehicles
    • H02G3/02Details
    • H02G3/08Distribution boxes; Connection or junction boxes
    • H02G3/12Distribution boxes; Connection or junction boxes for flush mounting

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Structural Engineering (AREA)
  • Civil Engineering (AREA)
  • Architecture (AREA)
  • Bipolar Transistors (AREA)
FR7009076A 1969-03-18 1970-03-13 Expired FR2035028B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691913681 DE1913681A1 (en) 1969-03-18 1969-03-18 Silicon high frequency planar transistor

Publications (2)

Publication Number Publication Date
FR2035028A1 true FR2035028A1 (en) 1970-12-18
FR2035028B1 FR2035028B1 (en) 1974-09-20

Family

ID=5728502

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7009076A Expired FR2035028B1 (en) 1969-03-18 1970-03-13

Country Status (7)

Country Link
AT (1) AT313981B (en)
CH (1) CH503377A (en)
DE (1) DE1913681A1 (en)
FR (1) FR2035028B1 (en)
GB (1) GB1262396A (en)
NL (1) NL6916374A (en)
SE (1) SE348318B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2429957B2 (en) * 1974-06-21 1980-08-28 Siemens Ag, 1000 Berlin Und 8000 Muenchen Method for producing a doped zone of a specific conductivity type in a semiconductor body

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
REVUE ALLEMANDE "ZEITSCHRIFT FUR ANGEWANDTE PHYSIK" VOL. 27, NO2, 1969, "DIFFUSION SANOCALIEN BEI NPN SILIZIUM-PLANOR-HOCHSTFREQUENTZTRANSISTOREN". W.HENNING ET AL, PAGES 89-92.) *

Also Published As

Publication number Publication date
DE1913681A1 (en) 1970-10-01
FR2035028B1 (en) 1974-09-20
AT313981B (en) 1974-03-11
SE348318B (en) 1972-08-28
NL6916374A (en) 1970-09-22
CH503377A (en) 1971-02-15
GB1262396A (en) 1972-02-02

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Legal Events

Date Code Title Description
ST Notification of lapse