CH503377A - Silicon high frequency planar transistor - Google Patents

Silicon high frequency planar transistor

Info

Publication number
CH503377A
CH503377A CH393370A CH393370A CH503377A CH 503377 A CH503377 A CH 503377A CH 393370 A CH393370 A CH 393370A CH 393370 A CH393370 A CH 393370A CH 503377 A CH503377 A CH 503377A
Authority
CH
Switzerland
Prior art keywords
high frequency
planar transistor
silicon high
frequency planar
silicon
Prior art date
Application number
CH393370A
Other languages
German (de)
Inventor
Hargasser Hans
Wolfgang Dr Henning
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH503377A publication Critical patent/CH503377A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02G—INSTALLATION OF ELECTRIC CABLES OR LINES, OR OF COMBINED OPTICAL AND ELECTRIC CABLES OR LINES
    • H02G3/00—Installations of electric cables or lines or protective tubing therefor in or on buildings, equivalent structures or vehicles
    • H02G3/02—Details
    • H02G3/08—Distribution boxes; Connection or junction boxes
    • H02G3/12—Distribution boxes; Connection or junction boxes for flush mounting

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Structural Engineering (AREA)
  • Civil Engineering (AREA)
  • Architecture (AREA)
  • Bipolar Transistors (AREA)
CH393370A 1969-03-18 1970-03-17 Silicon high frequency planar transistor CH503377A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691913681 DE1913681A1 (en) 1969-03-18 1969-03-18 Silicon high frequency planar transistor

Publications (1)

Publication Number Publication Date
CH503377A true CH503377A (en) 1971-02-15

Family

ID=5728502

Family Applications (1)

Application Number Title Priority Date Filing Date
CH393370A CH503377A (en) 1969-03-18 1970-03-17 Silicon high frequency planar transistor

Country Status (7)

Country Link
AT (1) AT313981B (en)
CH (1) CH503377A (en)
DE (1) DE1913681A1 (en)
FR (1) FR2035028B1 (en)
GB (1) GB1262396A (en)
NL (1) NL6916374A (en)
SE (1) SE348318B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2429957B2 (en) * 1974-06-21 1980-08-28 Siemens Ag, 1000 Berlin Und 8000 Muenchen Method for producing a doped zone of a specific conductivity type in a semiconductor body

Also Published As

Publication number Publication date
DE1913681A1 (en) 1970-10-01
FR2035028B1 (en) 1974-09-20
AT313981B (en) 1974-03-11
SE348318B (en) 1972-08-28
NL6916374A (en) 1970-09-22
FR2035028A1 (en) 1970-12-18
GB1262396A (en) 1972-02-02

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Legal Events

Date Code Title Description
PL Patent ceased