FR2028336A1 - - Google Patents
Info
- Publication number
- FR2028336A1 FR2028336A1 FR6942837A FR6942837A FR2028336A1 FR 2028336 A1 FR2028336 A1 FR 2028336A1 FR 6942837 A FR6942837 A FR 6942837A FR 6942837 A FR6942837 A FR 6942837A FR 2028336 A1 FR2028336 A1 FR 2028336A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
- H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US79125469A | 1969-01-15 | 1969-01-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2028336A1 true FR2028336A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1970-10-09 |
| FR2028336B1 FR2028336B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1973-10-19 |
Family
ID=25153132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR6942837A Expired FR2028336B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1969-01-15 | 1969-12-11 |
Country Status (4)
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3693003A (en) * | 1970-11-19 | 1972-09-19 | Gen Electric | Storage target for an electron-beam addressed read, write and erase memory |
| US3911269A (en) * | 1971-03-20 | 1975-10-07 | Philips Corp | Circuit arrangement having at least one circuit element which is energised by means of radiation and semiconductor device suitable for use in such a circuit arrangement |
| US3806742A (en) * | 1972-11-01 | 1974-04-23 | Motorola Inc | Mos voltage reference circuit |
| US4117506A (en) * | 1977-07-28 | 1978-09-26 | Rca Corporation | Amorphous silicon photovoltaic device having an insulating layer |
| US4473836A (en) * | 1982-05-03 | 1984-09-25 | Dalsa Inc. | Integrable large dynamic range photodetector element for linear and area integrated circuit imaging arrays |
| GB2176935B (en) * | 1985-06-21 | 1988-11-23 | Stc Plc | Photoconductor |
| GB2437768A (en) * | 2006-05-03 | 2007-11-07 | Seiko Epson Corp | Photosensing TFT |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1522025A (fr) * | 1966-05-10 | 1968-04-19 | Siemens Ag | Dispositif comportant un composant à semi-conducteurs, photosensible |
| FR1566558A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1968-03-20 | 1969-05-09 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3459944A (en) * | 1966-01-04 | 1969-08-05 | Ibm | Photosensitive insulated gate field effect transistor |
-
1969
- 1969-01-15 US US791254*A patent/US3577047A/en not_active Expired - Lifetime
- 1969-12-11 FR FR6942837A patent/FR2028336B1/fr not_active Expired
-
1970
- 1970-01-06 GB GB571/70A patent/GB1276463A/en not_active Expired
- 1970-01-15 DE DE19702001622 patent/DE2001622A1/de active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1522025A (fr) * | 1966-05-10 | 1968-04-19 | Siemens Ag | Dispositif comportant un composant à semi-conducteurs, photosensible |
| FR1566558A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1968-03-20 | 1969-05-09 |
Non-Patent Citations (1)
| Title |
|---|
| REVUE FRANCAISE "TOUTE L'ELECTRONIQUE" VOL, 35 AVRIL 1968 "FAISONS LE POINT : "L'OPTO ELECTRONIQUE" R. DAMAYE PAGE 128-134 * |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2028336B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1973-10-19 |
| US3577047A (en) | 1971-05-04 |
| GB1276463A (en) | 1972-06-01 |
| DE2001622A1 (de) | 1970-07-23 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |