FR2020573A1 - - Google Patents
Info
- Publication number
- FR2020573A1 FR2020573A1 FR6934710A FR6934710A FR2020573A1 FR 2020573 A1 FR2020573 A1 FR 2020573A1 FR 6934710 A FR6934710 A FR 6934710A FR 6934710 A FR6934710 A FR 6934710A FR 2020573 A1 FR2020573 A1 FR 2020573A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B9/00—Generation of oscillations using transit-time effects
- H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
- H03B9/14—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance
- H03B9/141—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance and comprising a voltage sensitive element, e.g. varactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/864—Transit-time diodes, e.g. IMPATT, TRAPATT diodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03C—MODULATION
- H03C3/00—Angle modulation
- H03C3/10—Angle modulation by means of variable impedance
- H03C3/12—Angle modulation by means of variable impedance by means of a variable reactive element
- H03C3/22—Angle modulation by means of variable impedance by means of a variable reactive element the element being a semiconductor diode, e.g. varicap diode
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7473968 | 1968-10-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2020573A1 true FR2020573A1 (fr) | 1970-07-17 |
Family
ID=13555892
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR6934710A Pending FR2020573A1 (fr) | 1968-10-12 | 1969-10-10 |
Country Status (5)
Country | Link |
---|---|
US (1) | US3675161A (fr) |
DE (1) | DE1950937C3 (fr) |
FR (1) | FR2020573A1 (fr) |
GB (1) | GB1281409A (fr) |
NL (1) | NL154365B (fr) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3829881A (en) * | 1969-09-18 | 1974-08-13 | Matsushita Electric Ind Co Ltd | Variable capacitance device |
US3755752A (en) * | 1971-04-26 | 1973-08-28 | Raytheon Co | Back-to-back semiconductor high frequency device |
US3875535A (en) * | 1973-05-24 | 1975-04-01 | Rca Corp | Enhanced efficiency diode circuit |
US4068255A (en) * | 1975-10-16 | 1978-01-10 | Dionics, Inc. | Mesa-type high voltage switching integrated circuit |
USRE33469E (en) * | 1981-08-14 | 1990-12-04 | Texas Instruments Incorporated | Monolithic microwave wide-band VCO |
US4481487A (en) * | 1981-08-14 | 1984-11-06 | Texas Instruments Incorporated | Monolithic microwave wide-band VCO |
US4458215A (en) * | 1981-08-17 | 1984-07-03 | Rca Corporation | Monolithic voltage controlled oscillator |
US4568889A (en) * | 1983-08-31 | 1986-02-04 | Texas Instruments Incorporated | Distributed diode VCO with stripline coupled output and distributed variable capacitor control |
FR2567325B1 (fr) * | 1984-07-03 | 1986-11-14 | Thomson Csf | Element a capacite variable, commandable par une tension continue |
US6667539B2 (en) * | 2001-11-08 | 2003-12-23 | International Business Machines Corporation | Method to increase the tuning voltage range of MOS varactors |
FR2911773B1 (fr) | 2007-01-30 | 2009-03-27 | Tornier Sas | Methode et ensemble d'instrumentation chirurgicale pour poser une prothese totale d'epaule inversee,et prothese correspondante |
US8340145B2 (en) | 2009-05-29 | 2012-12-25 | Eth Zurich | Microwave circuit |
US9408652B2 (en) | 2010-04-27 | 2016-08-09 | Tornier Sas | Intra-articular joint replacement and method |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3141141A (en) * | 1961-12-29 | 1964-07-14 | Bell Telephone Labor Inc | Electronically tunable solid state oscillator |
US3518574A (en) * | 1964-05-01 | 1970-06-30 | Ibm | Injection laser device |
US3465265A (en) * | 1965-09-13 | 1969-09-02 | Tokyo Shibaura Electric Co | Frequency modulator using an n-type semiconductor oscillation device |
US3403306A (en) * | 1966-01-20 | 1968-09-24 | Itt | Semiconductor device having controllable noise characteristics |
US3524149A (en) * | 1968-02-23 | 1970-08-11 | Gen Telephone & Elect | Frequency modulated oscillator circuit utilizing avalanche diode |
-
1969
- 1969-10-08 US US864684A patent/US3675161A/en not_active Expired - Lifetime
- 1969-10-09 GB GB49599/69A patent/GB1281409A/en not_active Expired
- 1969-10-09 DE DE1950937A patent/DE1950937C3/de not_active Expired
- 1969-10-10 NL NL696915362A patent/NL154365B/xx not_active IP Right Cessation
- 1969-10-10 FR FR6934710A patent/FR2020573A1/fr active Pending
Also Published As
Publication number | Publication date |
---|---|
DE1950937C3 (de) | 1978-12-07 |
NL154365B (nl) | 1977-08-15 |
DE1950937B2 (de) | 1978-04-13 |
US3675161A (en) | 1972-07-04 |
DE1950937A1 (de) | 1970-04-16 |
GB1281409A (en) | 1972-07-12 |
NL6915362A (fr) | 1970-04-14 |