FR2006045A1 - - Google Patents

Info

Publication number
FR2006045A1
FR2006045A1 FR6910916A FR6910916A FR2006045A1 FR 2006045 A1 FR2006045 A1 FR 2006045A1 FR 6910916 A FR6910916 A FR 6910916A FR 6910916 A FR6910916 A FR 6910916A FR 2006045 A1 FR2006045 A1 FR 2006045A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR6910916A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of FR2006045A1 publication Critical patent/FR2006045A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
FR6910916A 1968-04-11 1969-04-09 Withdrawn FR2006045A1 (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US72050968A 1968-04-11 1968-04-11

Publications (1)

Publication Number Publication Date
FR2006045A1 true FR2006045A1 (https=) 1969-12-19

Family

ID=24894250

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6910916A Withdrawn FR2006045A1 (https=) 1968-04-11 1969-04-09

Country Status (4)

Country Link
US (1) US3544860A (https=)
DE (1) DE1918557B2 (https=)
FR (1) FR2006045A1 (https=)
GB (1) GB1252987A (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3896475A (en) * 1972-01-28 1975-07-22 Philips Corp Semiconductor device comprising resistance region having portions lateral to conductors
US4035827A (en) * 1976-04-29 1977-07-12 Rca Corporation Thermally ballasted semiconductor device
JPS551125A (en) * 1978-06-20 1980-01-07 Toshiba Corp Semiconductor device
IT1213171B (it) * 1984-05-21 1989-12-14 Ates Componenti Elettron Transistore bipolare di potenza.
DE3521059A1 (de) * 1985-06-12 1986-12-18 Vladimir Il'ič Minsk Kabanec Zusammengesetzter transistor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL260481A (https=) * 1960-02-08
US3264493A (en) * 1963-10-01 1966-08-02 Fairchild Camera Instr Co Semiconductor circuit module for a high-gain, high-input impedance amplifier
US3416043A (en) * 1965-04-12 1968-12-10 Burroughs Corp Integrated anti-ringing clamped logic circuits
US3442003A (en) * 1965-07-26 1969-05-06 Teledyne Inc Method for interconnecting thin films

Also Published As

Publication number Publication date
GB1252987A (https=) 1971-11-10
US3544860A (en) 1970-12-01
DE1918557B2 (de) 1978-02-16
DE1918557A1 (de) 1970-02-05

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Legal Events

Date Code Title Description
ST Notification of lapse