FR1602477A - Silicon carbide whiskers - Google Patents
Silicon carbide whiskersInfo
- Publication number
- FR1602477A FR1602477A FR1602477DA FR1602477A FR 1602477 A FR1602477 A FR 1602477A FR 1602477D A FR1602477D A FR 1602477DA FR 1602477 A FR1602477 A FR 1602477A
- Authority
- FR
- France
- Prior art keywords
- pref
- silicon carbide
- degrees
- atmos
- cerium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The whiskers which may be used in electronic devices as reinforcement for glass, metal and plastics or as filters are produced by crystallising in an atmos. contg. a gp. IIIB metal or cpd. but excluding La, at 2450 degrees C pref. 2200-2400 degrees C. Pref. crystallisation is effected by recrystallisation and/or condensation in an inert atmos. in a sealed silicon carbide container and in the presence of cerium or yttrium, pref. a mineral of high cerium or yttrium content. For electronics applications various elements-N, Al, B or P may be added during crystal growth to modify the conductivity or fluorescence.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL6803421A NL6803421A (en) | 1968-03-11 | 1968-03-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1602477A true FR1602477A (en) | 1970-11-30 |
Family
ID=19802990
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1602477D Expired FR1602477A (en) | 1968-03-11 | 1968-12-30 | Silicon carbide whiskers |
Country Status (9)
Country | Link |
---|---|
JP (1) | JPS5033039B1 (en) |
BE (1) | BE712305A (en) |
BR (1) | BR6907033D0 (en) |
CH (1) | CH514501A (en) |
DE (1) | DE1910940B2 (en) |
ES (1) | ES364528A1 (en) |
FR (1) | FR1602477A (en) |
NL (1) | NL6803421A (en) |
NO (1) | NO128053B (en) |
-
1968
- 1968-03-11 NL NL6803421A patent/NL6803421A/xx unknown
- 1968-03-15 BE BE712305D patent/BE712305A/xx unknown
- 1968-12-30 FR FR1602477D patent/FR1602477A/en not_active Expired
-
1969
- 1969-03-04 DE DE19691910940 patent/DE1910940B2/en active Granted
- 1969-03-07 CH CH346769A patent/CH514501A/en not_active IP Right Cessation
- 1969-03-07 JP JP44016909A patent/JPS5033039B1/ja active Pending
- 1969-03-08 NO NO00986/69A patent/NO128053B/no unknown
- 1969-03-08 ES ES364528A patent/ES364528A1/en not_active Expired
- 1969-03-10 BR BR207033/69A patent/BR6907033D0/en unknown
Also Published As
Publication number | Publication date |
---|---|
NL6803421A (en) | 1969-09-15 |
ES364528A1 (en) | 1970-12-16 |
JPS5033039B1 (en) | 1975-10-27 |
NO128053B (en) | 1973-09-24 |
DE1910940C3 (en) | 1978-09-28 |
DE1910940B2 (en) | 1978-02-02 |
BE712305A (en) | 1968-07-15 |
CH514501A (en) | 1971-10-31 |
BR6907033D0 (en) | 1973-01-25 |
DE1910940A1 (en) | 1969-10-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |