FR1602477A - Silicon carbide whiskers - Google Patents

Silicon carbide whiskers

Info

Publication number
FR1602477A
FR1602477A FR1602477DA FR1602477A FR 1602477 A FR1602477 A FR 1602477A FR 1602477D A FR1602477D A FR 1602477DA FR 1602477 A FR1602477 A FR 1602477A
Authority
FR
France
Prior art keywords
pref
silicon carbide
degrees
atmos
cerium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of FR1602477A publication Critical patent/FR1602477A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/90Carbides
    • C01B32/914Carbides of single elements
    • C01B32/956Silicon carbide
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/10Particle morphology extending in one dimension, e.g. needle-like
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/61Micrometer sized, i.e. from 1-100 micrometer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

The whiskers which may be used in electronic devices as reinforcement for glass, metal and plastics or as filters are produced by crystallising in an atmos. contg. a gp. IIIB metal or cpd. but excluding La, at 2450 degrees C pref. 2200-2400 degrees C. Pref. crystallisation is effected by recrystallisation and/or condensation in an inert atmos. in a sealed silicon carbide container and in the presence of cerium or yttrium, pref. a mineral of high cerium or yttrium content. For electronics applications various elements-N, Al, B or P may be added during crystal growth to modify the conductivity or fluorescence.
FR1602477D 1968-03-11 1968-12-30 Silicon carbide whiskers Expired FR1602477A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6803421A NL6803421A (en) 1968-03-11 1968-03-11

Publications (1)

Publication Number Publication Date
FR1602477A true FR1602477A (en) 1970-11-30

Family

ID=19802990

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1602477D Expired FR1602477A (en) 1968-03-11 1968-12-30 Silicon carbide whiskers

Country Status (9)

Country Link
JP (1) JPS5033039B1 (en)
BE (1) BE712305A (en)
BR (1) BR6907033D0 (en)
CH (1) CH514501A (en)
DE (1) DE1910940B2 (en)
ES (1) ES364528A1 (en)
FR (1) FR1602477A (en)
NL (1) NL6803421A (en)
NO (1) NO128053B (en)

Also Published As

Publication number Publication date
NL6803421A (en) 1969-09-15
ES364528A1 (en) 1970-12-16
JPS5033039B1 (en) 1975-10-27
NO128053B (en) 1973-09-24
DE1910940C3 (en) 1978-09-28
DE1910940B2 (en) 1978-02-02
BE712305A (en) 1968-07-15
CH514501A (en) 1971-10-31
BR6907033D0 (en) 1973-01-25
DE1910940A1 (en) 1969-10-16

Similar Documents

Publication Publication Date Title
JPS545811B2 (en)
GB1520138A (en) Growing single crystal garnets
DE69232935T2 (en) Process for the production of compositions based on rare earth metals
FR1602477A (en) Silicon carbide whiskers
GB1389914A (en) Process for preparing lithium niobate
GB1229508A (en)
GB1309347A (en) Production of doped gallium arsenide
GB1220311A (en) Improvements in or relating to the manufacture of magnesium-aluminium spinel crystals
GB1065728A (en) Improvements in or relating to the preparation of group b and vb compound crystals
Hogg et al. Crystallographic evidence for the existence of the phases In 4 Se 3 and In 4 Te 3 which contain the homonuclear triatomic cation (In 3) 5+
GB1048975A (en) Improvements in high density silicon
ES365930A1 (en) Crystals, in particular crystal whiskers and objects comprising such crystals
GB1445364A (en) Monocrystalline garnet body
GB1230726A (en)
GB1427879A (en) Neadymium ultraphosphates
GB1078216A (en) A process for the production of high-purity semiconductor material
Studenikin Morphological stability of the crystallization of gallium-containing garnets by the Czochralski method
JPS649674A (en) Exciting light-emitting lamp for gas cell type atomic oscillator
AT291194B (en) Process for the production of silicon carbide crystals
Gribkov et al. Growing of Alpha-Al 2 O 3 Filaments by a Vapor-Liquid-Solid-Phase Mechanism
ATA249671A (en) DEVICE FOR THE PRODUCTION OF SINGLE CRYSTALS ACCORDING TO VERNEUIL
ES339024A1 (en) Abrasive aluminium oxide crystals and articles and method of producing same.
FR1454916A (en) Improvements to composite ceramic materials
Voskresenskaya et al. Defects in single crystals of compounds with the sillenite type structure.
GB1017133A (en) A process for producing pure gallium and indium arsenides

Legal Events

Date Code Title Description
ST Notification of lapse