FR1600776A - - Google Patents
Info
- Publication number
- FR1600776A FR1600776A FR1600776DA FR1600776A FR 1600776 A FR1600776 A FR 1600776A FR 1600776D A FR1600776D A FR 1600776DA FR 1600776 A FR1600776 A FR 1600776A
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH313068A CH476398A (en) | 1968-03-01 | 1968-03-01 | Process for producing fine etched patterns |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1600776A true FR1600776A (en) | 1970-07-27 |
Family
ID=4249256
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1600776D Expired FR1600776A (en) | 1968-03-01 | 1968-12-30 |
Country Status (4)
Country | Link |
---|---|
CH (1) | CH476398A (en) |
DE (1) | DE1908901C3 (en) |
FR (1) | FR1600776A (en) |
GB (1) | GB1255039A (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH506188A (en) * | 1970-09-02 | 1971-04-15 | Ibm | Field effect transistor |
NL7412383A (en) * | 1974-09-19 | 1976-03-23 | Philips Nv | METHOD OF MANUFACTURING A DEVICE WITH A CONDUCTOR PATTERN. |
DE2824026A1 (en) * | 1978-06-01 | 1979-12-20 | Licentia Gmbh | Barrier layer FET - mfd. by under etching bottom mask layer to cover barrier layer surface |
GB2127751B (en) * | 1982-10-06 | 1986-04-23 | Plessey Co Plc | Producing narrow features in electrical devices |
DE3915650A1 (en) * | 1989-05-12 | 1990-11-15 | Siemens Ag | Layer structuring - involving mask layer etching under photolacquer layer to obtain reduced structure width |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL143070B (en) * | 1964-04-21 | 1974-08-15 | Philips Nv | PROCESS FOR APPLYING SIDE OF EACH OTHER, BY AN INTERMEDIATE SPACE OF SEPARATE METAL PARTS ON A SUBSTRATE AND OBJECT, IN PARTICULAR SEMI-CONDUCTOR DEVICE, MANUFACTURED IN APPLICATION OF THIS PROCESS. |
-
1968
- 1968-03-01 CH CH313068A patent/CH476398A/en not_active IP Right Cessation
- 1968-12-30 FR FR1600776D patent/FR1600776A/fr not_active Expired
-
1969
- 1969-02-22 DE DE1908901A patent/DE1908901C3/en not_active Expired
- 1969-02-28 GB GB00804/69A patent/GB1255039A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1255039A (en) | 1971-11-24 |
DE1908901C3 (en) | 1981-09-24 |
CH476398A (en) | 1969-07-31 |
DE1908901A1 (en) | 1969-09-25 |
DE1908901B2 (en) | 1976-12-09 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |