FR1595497A - - Google Patents
Info
- Publication number
- FR1595497A FR1595497A FR1595497DA FR1595497A FR 1595497 A FR1595497 A FR 1595497A FR 1595497D A FR1595497D A FR 1595497DA FR 1595497 A FR1595497 A FR 1595497A
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P9/00—Arrangements for controlling electric generators for the purpose of obtaining a desired output
- H02P9/14—Arrangements for controlling electric generators for the purpose of obtaining a desired output by variation of field
- H02P9/26—Arrangements for controlling electric generators for the purpose of obtaining a desired output by variation of field using discharge tubes or semiconductor devices
- H02P9/30—Arrangements for controlling electric generators for the purpose of obtaining a desired output by variation of field using discharge tubes or semiconductor devices using semiconductor devices
- H02P9/305—Arrangements for controlling electric generators for the purpose of obtaining a desired output by variation of field using discharge tubes or semiconductor devices using semiconductor devices controlling voltage
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/023—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof secondary-electron emitting electrode arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/38—Photoelectric screens; Charge-storage screens not using charge storage, e.g. photo-emissive screen, extended cathode
- H01J29/385—Photocathodes comprising a layer which modified the wave length of impinging radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/44—Charge-storage screens exhibiting internal electric effects caused by particle radiation, e.g. bombardment-induced conductivity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
- H01J29/458—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen pyroelectrical targets; targets for infrared or ultraviolet or X-ray radiations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/26—Image pick-up tubes having an input of visible light and electric output
- H01J31/48—Tubes with amplification of output effected by electron multiplier arrangements within the vacuum space
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/49—Pick-up adapted for an input of electromagnetic radiation other than visible light and having an electric output, e.g. for an input of X-rays, for an input of infrared radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/50—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output
- H01J31/506—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output tubes using secondary emission effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/50—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output
- H01J31/52—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output having grid-like image screen through which the electron ray or beam passes and by which the ray or beam is influenced before striking the luminescent output screen, i.e. having "triode action"
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0761—Vertical bipolar transistor in combination with diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0821—Combination of lateral and vertical transistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Dc-Dc Converters (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19681764234 DE1764234A1 (de) | 1968-04-27 | 1968-04-27 | Monolithische Halbleiteranordnung mit integrierten Leistungstransistoren,insbesondere als Spannungsregler fuer Fahrzeuglichtmaschinen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR1595497A true FR1595497A (fr) | 1970-06-08 |
Family
ID=5697906
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR1595497D Expired FR1595497A (fr) | 1968-04-27 | 1968-12-26 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3596115A (fr) |
| AT (1) | AT292851B (fr) |
| BR (1) | BR6908351D0 (fr) |
| DE (1) | DE1764234A1 (fr) |
| ES (1) | ES366493A1 (fr) |
| FR (1) | FR1595497A (fr) |
| GB (1) | GB1269362A (fr) |
| NL (1) | NL6905243A (fr) |
| SE (1) | SE354384B (fr) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2177025A1 (fr) * | 1972-03-23 | 1973-11-02 | Itt | |
| FR2427687A1 (fr) * | 1978-06-01 | 1979-12-28 | Mitsubishi Electric Corp | Dispositifs a semi-conducteurs comportant au moins un transistor de puissance et une serie de transistors pour signaux faibles |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3868722A (en) * | 1970-06-20 | 1975-02-25 | Philips Corp | Semiconductor device having at least two transistors and method of manufacturing same |
| DE2037636A1 (de) * | 1970-07-29 | 1972-02-10 | Philips Patentverwaltung | Integrierte monolithische Halbleiter schaltung mit geregelter Kristalltemperatur |
| US3961340A (en) * | 1971-11-22 | 1976-06-01 | U.S. Philips Corporation | Integrated circuit having bipolar transistors and method of manufacturing said circuit |
| US3999213A (en) * | 1972-04-14 | 1976-12-21 | U.S. Philips Corporation | Semiconductor device and method of manufacturing the device |
| DE2305484C3 (de) * | 1973-02-05 | 1978-08-24 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Erregereinrichtung für eine gleichstromerregte Drehstrom-Lichtmaschine |
| DE2401701C3 (de) * | 1974-01-15 | 1978-12-21 | Robert Bosch Gmbh, 7000 Stuttgart | Transistorleistungsschalter |
| DE2452107C3 (de) * | 1974-11-02 | 1979-08-23 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Temperaturkompensierte Z-Diodenanordnung |
| US3967186A (en) * | 1975-02-03 | 1976-06-29 | Solitron Devices, Inc. | Solid state voltage regulator |
| US4081820A (en) * | 1977-02-03 | 1978-03-28 | Sensor Technology, Inc. | Complementary photovoltaic cell |
| US4310792A (en) * | 1978-06-30 | 1982-01-12 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor voltage regulator |
| US4581547A (en) * | 1984-02-22 | 1986-04-08 | Motorola, Inc. | Integrated circuit that eliminates latch-up and analog signal error due to current injected from the substrate |
| JPH08195399A (ja) * | 1994-09-22 | 1996-07-30 | Texas Instr Inc <Ti> | 埋込み層を必要としない絶縁された垂直ｐｎｐトランジスタ |
| DE19519477C2 (de) * | 1995-05-27 | 1998-07-09 | Bosch Gmbh Robert | Integrierte Schaltung mit thermischem Überlastschutz, insb. geeignet für KfZ-Zündspulenansteuerung |
| EP0809293B1 (fr) * | 1996-05-21 | 2001-08-29 | Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Structure semi-conductrice de puissance avec transistor latéral commandé par un transistor vertical |
| US5757211A (en) * | 1996-12-27 | 1998-05-26 | Sgs-Thomson Microelectronics, Inc. | IC precision resistor ratio matching with different tub bias voltages |
| EP0985242A4 (fr) * | 1998-01-31 | 2007-12-12 | John W Oglesbee | Dispositif de protection contre les surcharges et procede pour batteries rechargeables a base de lithium |
| JP2001274402A (ja) * | 2000-03-24 | 2001-10-05 | Toshiba Corp | パワー半導体装置 |
| US9537438B2 (en) * | 2015-01-12 | 2017-01-03 | Cummins Power Generation, Ip, Inc. | Buss potential isolation module |
-
1968
- 1968-04-27 DE DE19681764234 patent/DE1764234A1/de active Pending
- 1968-12-26 FR FR1595497D patent/FR1595497A/fr not_active Expired
-
1969
- 1969-04-03 NL NL6905243A patent/NL6905243A/xx unknown
- 1969-04-08 SE SE04941/69A patent/SE354384B/xx unknown
- 1969-04-18 AT AT379269A patent/AT292851B/de not_active IP Right Cessation
- 1969-04-24 US US819048A patent/US3596115A/en not_active Expired - Lifetime
- 1969-04-25 GB GB21140/69A patent/GB1269362A/en not_active Expired
- 1969-04-25 BR BR208351/69A patent/BR6908351D0/pt unknown
- 1969-04-26 ES ES366493A patent/ES366493A1/es not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2177025A1 (fr) * | 1972-03-23 | 1973-11-02 | Itt | |
| FR2427687A1 (fr) * | 1978-06-01 | 1979-12-28 | Mitsubishi Electric Corp | Dispositifs a semi-conducteurs comportant au moins un transistor de puissance et une serie de transistors pour signaux faibles |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1764234A1 (de) | 1971-07-01 |
| NL6905243A (fr) | 1969-10-29 |
| GB1269362A (en) | 1972-04-06 |
| BR6908351D0 (pt) | 1973-02-20 |
| ES366493A1 (es) | 1971-03-16 |
| US3596115A (en) | 1971-07-27 |
| AT292851B (de) | 1971-09-10 |
| SE354384B (fr) | 1973-03-05 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |