FR1557614A - - Google Patents
Info
- Publication number
- FR1557614A FR1557614A FR58072A FR58072A FR1557614A FR 1557614 A FR1557614 A FR 1557614A FR 58072 A FR58072 A FR 58072A FR 58072 A FR58072 A FR 58072A FR 1557614 A FR1557614 A FR 1557614A
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for DC voltages or currents
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/676—Combinations of only thyristors
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR58072A FR1557614A (cs) | 1966-04-19 | 1966-04-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR58072A FR1557614A (cs) | 1966-04-19 | 1966-04-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR1557614A true FR1557614A (cs) | 1969-02-21 |
Family
ID=8606525
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR58072A Expired FR1557614A (cs) | 1966-04-19 | 1966-04-19 |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR1557614A (cs) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2128236A1 (cs) * | 1971-03-12 | 1972-10-20 | Gen Electric | |
| FR2420882A1 (fr) * | 1978-03-25 | 1979-10-19 | Sony Corp | Circuit de commutation |
-
1966
- 1966-04-19 FR FR58072A patent/FR1557614A/fr not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2128236A1 (cs) * | 1971-03-12 | 1972-10-20 | Gen Electric | |
| FR2420882A1 (fr) * | 1978-03-25 | 1979-10-19 | Sony Corp | Circuit de commutation |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TP | Transmission of property | ||
| ST | Notification of lapse |