FR1549324A - - Google Patents

Info

Publication number
FR1549324A
FR1549324A FR1549324DA FR1549324A FR 1549324 A FR1549324 A FR 1549324A FR 1549324D A FR1549324D A FR 1549324DA FR 1549324 A FR1549324 A FR 1549324A
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19661539867 external-priority patent/DE1539867C3/de
Application filed filed Critical
Application granted granted Critical
Publication of FR1549324A publication Critical patent/FR1549324A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/0788—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type comprising combinations of diodes or capacitors or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
FR1549324D 1951-01-28 1967-09-13 Expired FR1549324A (ar)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19661539867 DE1539867C3 (de) 1966-09-13 1966-09-13 Temperaturkompensierte Z-Diode und Verfahren zu ihrer Herstellung
DED0051079 1966-09-13

Publications (1)

Publication Number Publication Date
FR1549324A true FR1549324A (ar) 1968-12-13

Family

ID=25752810

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1549324D Expired FR1549324A (ar) 1951-01-28 1967-09-13

Country Status (2)

Country Link
FR (1) FR1549324A (ar)
GB (1) GB1176088A (ar)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4739378A (en) * 1986-02-18 1988-04-19 Sgs Microelettronica S.P.A. Protection of integrated circuits from electric discharge

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4005471A (en) * 1975-03-17 1977-01-25 International Business Machines Corporation Semiconductor resistor having a high value resistance for use in an integrated circuit semiconductor device
US3999205A (en) * 1975-04-03 1976-12-21 Rca Corporation Rectifier structure for a semiconductor integrated circuit device
JPS5378788A (en) * 1976-12-23 1978-07-12 Hitachi Ltd Temperature-compensation-type constant voltage element
DE10032543A1 (de) 2000-07-05 2002-01-17 Bosch Gmbh Robert Anordnung mit P-dotierten und N-dotierten Halbleiterschichten sowie Verfahren zu deren Herstellung

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4739378A (en) * 1986-02-18 1988-04-19 Sgs Microelettronica S.P.A. Protection of integrated circuits from electric discharge

Also Published As

Publication number Publication date
GB1176088A (en) 1970-01-01
DE1539867A1 (de) 1970-05-21
DE1539867B2 (ar) 1974-05-09

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Legal Events

Date Code Title Description
ST Notification of lapse