FR1538335A - Procédé de décapage - Google Patents
Procédé de décapageInfo
- Publication number
- FR1538335A FR1538335A FR8389A FR06008389A FR1538335A FR 1538335 A FR1538335 A FR 1538335A FR 8389 A FR8389 A FR 8389A FR 06008389 A FR06008389 A FR 06008389A FR 1538335 A FR1538335 A FR 1538335A
- Authority
- FR
- France
- Prior art keywords
- pickling process
- pickling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/017—Clean surfaces
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/158—Sputtering
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US54005466A | 1966-04-04 | 1966-04-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1538335A true FR1538335A (fr) | 1968-09-06 |
Family
ID=24153791
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8389A Expired FR1538335A (fr) | 1966-04-04 | 1967-03-01 | Procédé de décapage |
Country Status (3)
Country | Link |
---|---|
US (1) | US3598710A (fr) |
JP (1) | JPS5220936B1 (fr) |
FR (1) | FR1538335A (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2463975A1 (fr) * | 1979-08-22 | 1981-02-27 | Onera (Off Nat Aerospatiale) | Procede et appareil pour la gravure chimique par voie seche des circuits integres |
EP0065085A2 (fr) * | 1981-05-11 | 1982-11-24 | International Business Machines Corporation | Cathode pour l'abrasion ionique réactive |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6076652A (en) * | 1971-04-16 | 2000-06-20 | Texas Instruments Incorporated | Assembly line system and apparatus controlling transfer of a workpiece |
US3984301A (en) * | 1973-08-11 | 1976-10-05 | Nippon Electric Varian, Ltd. | Sputter-etching method employing fluorohalogenohydrocarbon etching gas and a planar electrode for a glow discharge |
US3947298A (en) * | 1974-01-25 | 1976-03-30 | Raytheon Company | Method of forming junction regions utilizing R.F. sputtering |
US4012307A (en) * | 1975-12-05 | 1977-03-15 | General Dynamics Corporation | Method for conditioning drilled holes in multilayer wiring boards |
US4076575A (en) * | 1976-06-30 | 1978-02-28 | International Business Machines Corporation | Integrated fabrication method of forming connectors through insulative layers |
US4277321A (en) * | 1979-04-23 | 1981-07-07 | Bell Telephone Laboratories, Incorporated | Treating multilayer printed wiring boards |
US4298443A (en) * | 1979-08-09 | 1981-11-03 | Bell Telephone Laboratories, Incorporated | High capacity etching apparatus and method |
US4361749A (en) * | 1980-02-04 | 1982-11-30 | Western Electric Co., Inc. | Uniformly cooled plasma etching electrode |
JPS6037188B2 (ja) * | 1981-08-27 | 1985-08-24 | 三菱マテリアル株式会社 | スパツタリング装置 |
US4461239A (en) * | 1982-07-30 | 1984-07-24 | Energy Conversion Devices, Inc. | Reduced capacitance electrode assembly |
JPH0770509B2 (ja) * | 1982-10-08 | 1995-07-31 | 株式会社日立製作所 | ドライプロセス装置 |
US4493855A (en) * | 1982-12-23 | 1985-01-15 | International Business Machines Corporation | Use of plasma polymerized organosilicon films in fabrication of lift-off masks |
US4911812A (en) * | 1987-10-21 | 1990-03-27 | Hitachi, Ltd. | Plasma treating method and apparatus therefor |
US4859304A (en) * | 1988-07-18 | 1989-08-22 | Micron Technology, Inc. | Temperature controlled anode for plasma dry etchers for etching semiconductor |
US5137610A (en) * | 1991-04-15 | 1992-08-11 | Motorola, Inc. | Sputter chamber with extended protection plate and method of use |
-
1966
- 1966-04-04 US US540054A patent/US3598710A/en not_active Expired - Lifetime
-
1967
- 1967-02-15 JP JP42009346A patent/JPS5220936B1/ja active Pending
- 1967-03-01 FR FR8389A patent/FR1538335A/fr not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2463975A1 (fr) * | 1979-08-22 | 1981-02-27 | Onera (Off Nat Aerospatiale) | Procede et appareil pour la gravure chimique par voie seche des circuits integres |
EP0065085A2 (fr) * | 1981-05-11 | 1982-11-24 | International Business Machines Corporation | Cathode pour l'abrasion ionique réactive |
EP0065085A3 (en) * | 1981-05-11 | 1983-07-20 | International Business Machines Corporation | A cathode for reactive ion etching |
Also Published As
Publication number | Publication date |
---|---|
US3598710A (en) | 1971-08-10 |
JPS5220936B1 (fr) | 1977-06-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR1538335A (fr) | Procédé de décapage | |
FR1519113A (fr) | Procédé de dimérisation | |
FR1499259A (fr) | Procédé de revêtement électrolytique | |
FR1499771A (fr) | Procédé de photo-polymérisation | |
FR1530058A (fr) | Procédé de purification | |
CH433876A (fr) | Procédé de revêtement | |
FR1517482A (fr) | Procédé de revalorisation des solutions de décapage usées | |
CH457208A (fr) | Procédé de revêtement | |
FR1538798A (fr) | Procédé de métallisation | |
FR1518279A (fr) | Procédé de pulvérisation | |
FR1547098A (fr) | Procédé de polycondensation | |
FR1472185A (fr) | Procédé de construction | |
FR1480216A (fr) | Procédé de construction | |
FR1396553A (fr) | Procédé de construction de serres-tunnels et châssis-tunnels | |
FR1527396A (fr) | Procédé de teinture | |
FR1492867A (fr) | Procédé de construction | |
FR1498538A (fr) | Procédé de revêtement | |
FR1541878A (fr) | Procédé de modulation | |
FR1476690A (fr) | Procédé de moulage | |
FR1511357A (fr) | Procédé de désalkylation | |
FR1422253A (fr) | Procédé de construction | |
CH476849A (fr) | Procédé de décarburation de ferrochrome | |
FR1521768A (fr) | Procédé de purification de flavine-adénine-dinuclétoide | |
FR1496745A (fr) | Procédé de soudure | |
FR1546863A (fr) | Procédé de photoélectropolymérisation |