FR1537549A - Thin film multi-layer semiconductor structure - Google Patents

Thin film multi-layer semiconductor structure

Info

Publication number
FR1537549A
FR1537549A FR121941A FR121941A FR1537549A FR 1537549 A FR1537549 A FR 1537549A FR 121941 A FR121941 A FR 121941A FR 121941 A FR121941 A FR 121941A FR 1537549 A FR1537549 A FR 1537549A
Authority
FR
France
Prior art keywords
thin film
semiconductor structure
layer semiconductor
film multi
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR121941A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
North American Aviation Corp
Original Assignee
North American Aviation Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by North American Aviation Corp filed Critical North American Aviation Corp
Priority to FR121941A priority Critical patent/FR1537549A/en
Application granted granted Critical
Publication of FR1537549A publication Critical patent/FR1537549A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L13/00—Compositions of rubbers containing carboxyl groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L45/00—Compositions of homopolymers or copolymers of compounds having no unsaturated aliphatic radicals in side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic or in a heterocyclic ring system; Compositions of derivatives of such polymers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
FR121941A 1966-09-13 1967-09-22 Thin film multi-layer semiconductor structure Expired FR1537549A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR121941A FR1537549A (en) 1966-09-13 1967-09-22 Thin film multi-layer semiconductor structure

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US57897266A 1966-09-13 1966-09-13
US57899766A 1966-09-13 1966-09-13
US57900366A 1966-09-13 1966-09-13
US58295566A 1966-09-29 1966-09-29
FR121941A FR1537549A (en) 1966-09-13 1967-09-22 Thin film multi-layer semiconductor structure
US72731768A 1968-05-07 1968-05-07
US72736468A 1968-05-07 1968-05-07

Publications (1)

Publication Number Publication Date
FR1537549A true FR1537549A (en) 1968-08-23

Family

ID=27562329

Family Applications (1)

Application Number Title Priority Date Filing Date
FR121941A Expired FR1537549A (en) 1966-09-13 1967-09-22 Thin film multi-layer semiconductor structure

Country Status (1)

Country Link
FR (1) FR1537549A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2413126A1 (en) * 1977-12-30 1979-07-27 Ibm PROCESS FOR GROWING A MONOCRISTALLINE FILM ON A SUBSTRATE WHEN THERE IS MISCONSTANCE BETWEEN THE CONSTITUENT MATERIALS OF THE FILM AND THE SUBSTRATE AND RESULTING STRUCTURE
EP0244081A1 (en) * 1986-03-28 1987-11-04 Canon Kabushiki Kaisha Method for forming crystal and crystal article obtained by said method
US5010033A (en) * 1987-03-27 1991-04-23 Canon Kabushiki Kaisha Process for producing compound semiconductor using an amorphous nucleation site

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2413126A1 (en) * 1977-12-30 1979-07-27 Ibm PROCESS FOR GROWING A MONOCRISTALLINE FILM ON A SUBSTRATE WHEN THERE IS MISCONSTANCE BETWEEN THE CONSTITUENT MATERIALS OF THE FILM AND THE SUBSTRATE AND RESULTING STRUCTURE
EP0244081A1 (en) * 1986-03-28 1987-11-04 Canon Kabushiki Kaisha Method for forming crystal and crystal article obtained by said method
EP0476713A3 (en) * 1986-03-28 1992-08-05 Canon Kabushiki Kaisha Method for forming crystal and crystal article obtained by said method
US5733369A (en) * 1986-03-28 1998-03-31 Canon Kabushiki Kaisha Method for forming crystal
US5853478A (en) * 1986-03-28 1998-12-29 Canon Kabushiki Kaisha Method for forming crystal and crystal article obtained by said method
US5010033A (en) * 1987-03-27 1991-04-23 Canon Kabushiki Kaisha Process for producing compound semiconductor using an amorphous nucleation site

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