FR1536107A - Semiconductor device enhancements - Google Patents
Semiconductor device enhancementsInfo
- Publication number
- FR1536107A FR1536107A FR120380A FR120380A FR1536107A FR 1536107 A FR1536107 A FR 1536107A FR 120380 A FR120380 A FR 120380A FR 120380 A FR120380 A FR 120380A FR 1536107 A FR1536107 A FR 1536107A
- Authority
- FR
- France
- Prior art keywords
- semiconductor device
- device enhancements
- enhancements
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR120380A FR1536107A (en) | 1966-09-09 | 1967-09-08 | Semiconductor device enhancements |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB4029666 | 1966-09-09 | ||
FR120380A FR1536107A (en) | 1966-09-09 | 1967-09-08 | Semiconductor device enhancements |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1536107A true FR1536107A (en) | 1968-08-09 |
Family
ID=26179342
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR120380A Expired FR1536107A (en) | 1966-09-09 | 1967-09-08 | Semiconductor device enhancements |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR1536107A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2129992A1 (en) * | 1971-03-25 | 1972-11-03 | Lecrosnier Daniel |
-
1967
- 1967-09-08 FR FR120380A patent/FR1536107A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2129992A1 (en) * | 1971-03-25 | 1972-11-03 | Lecrosnier Daniel |
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