FR1483669A - Appareil électronique de sélection de fréquence - Google Patents

Appareil électronique de sélection de fréquence

Info

Publication number
FR1483669A
FR1483669A FR66013A FR66013A FR1483669A FR 1483669 A FR1483669 A FR 1483669A FR 66013 A FR66013 A FR 66013A FR 66013 A FR66013 A FR 66013A FR 1483669 A FR1483669 A FR 1483669A
Authority
FR
France
Prior art keywords
selection device
frequency selection
electronic frequency
electronic
selection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR66013A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Application granted granted Critical
Publication of FR1483669A publication Critical patent/FR1483669A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/462Microelectro-mechanical filters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B11/00Generation of oscillations using a shock-excited tuned circuit
    • H03B11/04Generation of oscillations using a shock-excited tuned circuit excited by interrupter
    • H03B11/10Generation of oscillations using a shock-excited tuned circuit excited by interrupter interrupter being semiconductor device
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/30Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
    • H03B5/32Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
    • H03B5/36Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
    • H03B5/364Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device the amplifier comprising field effect transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03CMODULATION
    • H03C1/00Amplitude modulation
    • H03C1/36Amplitude modulation by means of semiconductor device having at least three electrodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F13/00Amplifiers using amplifying element consisting of two mechanically- or acoustically-coupled transducers, e.g. telephone-microphone amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46Filters
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/48Coupling means therefor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/48Coupling means therefor
    • H03H9/485Coupling means therefor for microelectro-mechanical filters
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04MTELEPHONIC COMMUNICATION
    • H04M1/00Substation equipment, e.g. for use by subscribers
    • H04M1/26Devices for calling a subscriber
    • H04M1/30Devices which can set up and transmit only one digit at a time
    • H04M1/50Devices which can set up and transmit only one digit at a time by generating or selecting currents of predetermined frequencies or combinations of frequencies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N39/00Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02244Details of microelectro-mechanical resonators
    • H03H2009/02283Vibrating means
    • H03H2009/02291Beams
    • H03H2009/02314Beams forming part of a transistor structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Acoustics & Sound (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Signal Processing (AREA)
  • Micromachines (AREA)
  • Apparatuses For Generation Of Mechanical Vibrations (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
FR66013A 1965-06-18 1966-06-17 Appareil électronique de sélection de fréquence Expired FR1483669A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US465090A US3413573A (en) 1965-06-18 1965-06-18 Microelectronic frequency selective apparatus with vibratory member and means responsive thereto

Publications (1)

Publication Number Publication Date
FR1483669A true FR1483669A (fr) 1967-06-02

Family

ID=23846452

Family Applications (1)

Application Number Title Priority Date Filing Date
FR66013A Expired FR1483669A (fr) 1965-06-18 1966-06-17 Appareil électronique de sélection de fréquence

Country Status (5)

Country Link
US (1) US3413573A (fr)
BE (1) BE682735A (fr)
DE (1) DE1275219B (fr)
FR (1) FR1483669A (fr)
GB (1) GB1125897A (fr)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3513356A (en) * 1967-06-27 1970-05-19 Westinghouse Electric Corp Electromechanical tuning apparatus particularly for microelectronic components
US3422371A (en) * 1967-07-24 1969-01-14 Sanders Associates Inc Thin film piezoelectric oscillator
US3517349A (en) * 1967-08-11 1970-06-23 Gen Electric Miniature electromechanical filter with magnetic drive
US3614678A (en) * 1967-08-11 1971-10-19 Gen Electric Electromechanical filters with integral piezoresistive output and methods of making same
US3533022A (en) * 1967-08-11 1970-10-06 Gen Electric Magnetically driven electromechanical filter with cantilevered resonator and variable q
US3634787A (en) * 1968-01-23 1972-01-11 Westinghouse Electric Corp Electromechanical tuning apparatus particularly for microelectronic components
US3585466A (en) * 1968-12-10 1971-06-15 Westinghouse Electric Corp Resonant gate transistor with improved gain having a vibratory member disposed in a spaced relationship between a field responsive member and a field plate
US3749984A (en) * 1969-04-11 1973-07-31 Rca Corp Electroacoustic semiconductor device employing an igfet
US3886584A (en) * 1970-11-23 1975-05-27 Harris Corp Radiation hardened mis devices
US3742254A (en) * 1971-01-27 1973-06-26 Texas Instruments Inc Automatic mos grounding circuit
JPS4854957A (fr) * 1971-11-08 1973-08-02
DE3013770A1 (de) * 1980-04-10 1981-10-29 Robert Bosch Gmbh, 7000 Stuttgart Sensor
JPS5938621A (ja) * 1982-08-27 1984-03-02 Nissan Motor Co Ltd 振動分析装置
US4674180A (en) * 1984-05-01 1987-06-23 The Foxboro Company Method of making a micromechanical electric shunt
DE3515349A1 (de) * 1985-04-27 1986-10-30 Messerschmitt-Bölkow-Blohm GmbH, 8012 Ottobrunn Elektrischer geber zur messung mechanischer groessen
DE3850968T2 (de) * 1988-10-14 1995-03-16 Ibm Abstandsgesteuerter Tunneleffektwandler und den Wandler verwendende Speichereinheit mit direktem Zugriff.
US5275055A (en) * 1992-08-31 1994-01-04 Honeywell Inc. Resonant gauge with microbeam driven in constant electric field
US5511427A (en) * 1993-07-21 1996-04-30 Honeywell Inc. Cantilevered microbeam temperature sensor
US5417115A (en) * 1993-07-23 1995-05-23 Honeywell Inc. Dielectrically isolated resonant microsensors
US5729075A (en) * 1995-06-12 1998-03-17 National Semiconductor Corporation Tuneable microelectromechanical system resonator
GB9623077D0 (en) * 1996-11-06 1997-01-08 Ml Lab Plc System and method for monitoring physical activity
US5874675A (en) * 1997-03-20 1999-02-23 Interscience, Inc. Wideband vibration sensor
DE10029501C1 (de) * 2000-06-21 2001-10-04 Fraunhofer Ges Forschung Vertikal-Transistor mit beweglichen Gate und Verfahren zu dessen Herstelllung
US8749054B2 (en) 2010-06-24 2014-06-10 L. Pierre de Rochemont Semiconductor carrier with vertical power FET module
JP4843611B2 (ja) 2004-10-01 2011-12-21 デ,ロシェモント,エル.,ピエール セラミックアンテナモジュール及びその製造方法
DE102004055937B4 (de) * 2004-11-19 2006-08-24 Siemens Ag Schaltmatrix
EP1964159A4 (fr) 2005-06-30 2017-09-27 L. Pierre De Rochemont Composants electriques et leur procede de fabrication
US8354294B2 (en) 2006-01-24 2013-01-15 De Rochemont L Pierre Liquid chemical deposition apparatus and process and products therefrom
US7959598B2 (en) 2008-08-20 2011-06-14 Asante Solutions, Inc. Infusion pump systems and methods
US8922347B1 (en) 2009-06-17 2014-12-30 L. Pierre de Rochemont R.F. energy collection circuit for wireless devices
US8952858B2 (en) 2009-06-17 2015-02-10 L. Pierre de Rochemont Frequency-selective dipole antennas
ATE535995T1 (de) * 2009-10-15 2011-12-15 Alcatel Lucent RF-LEISTUNGSVERSTÄRKER MIT SPEKTRAL GRUPPIERTEN SCHALTERN IM NANOGRÖßENBEREICH
EP2330738A1 (fr) 2009-12-03 2011-06-08 ETA SA Manufacture Horlogère Suisse Résonateur MEMS à transistor et oscillateur comportant un tel résonateur
US8552708B2 (en) 2010-06-02 2013-10-08 L. Pierre de Rochemont Monolithic DC/DC power management module with surface FET
US9023493B2 (en) 2010-07-13 2015-05-05 L. Pierre de Rochemont Chemically complex ablative max-phase material and method of manufacture
US8779489B2 (en) 2010-08-23 2014-07-15 L. Pierre de Rochemont Power FET with a resonant transistor gate
EP2437393B1 (fr) * 2010-10-01 2012-09-12 Alcatel Lucent Contrôle de puissance pour un amplificateur de puissance RF doté de commutateurs nanométriques spectralement groupés
WO2012061656A2 (fr) 2010-11-03 2012-05-10 De Rochemont L Pierre Porte-puces à semi-conducteurs présentant des dispositifs à points quantiques intégrés de manière monolithique, et leur procédé de fabrication
US8988061B2 (en) * 2011-02-10 2015-03-24 U.S. Department Of Energy Nanomechanical electric and electromagnetic field sensor
EP2509217B1 (fr) * 2011-04-07 2013-12-25 Alcatel Lucent Procédé pour amplifier un signal RF et dispositif amplificateur de puissance RF
EP3374905A1 (fr) 2016-01-13 2018-09-19 Bigfoot Biomedical, Inc. Interface utilisateur pour système de gestion du diabète
EP3453414A1 (fr) 2016-01-14 2019-03-13 Bigfoot Biomedical, Inc. Réglage des vitesses d'administration d'insuline
WO2018132765A1 (fr) 2017-01-13 2018-07-19 Mazlish Bryan Procédés, systèmes et dispositifs d'administration d'insuline
USD874471S1 (en) 2017-06-08 2020-02-04 Insulet Corporation Display screen with a graphical user interface
USD928199S1 (en) 2018-04-02 2021-08-17 Bigfoot Biomedical, Inc. Medication delivery device with icons
USD920343S1 (en) 2019-01-09 2021-05-25 Bigfoot Biomedical, Inc. Display screen or portion thereof with graphical user interface associated with insulin delivery
USD977502S1 (en) 2020-06-09 2023-02-07 Insulet Corporation Display screen with graphical user interface

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE518331C (de) * 1929-10-16 1931-02-14 Hartmann & Braun Akt Ges Elektrostatischer Frequenzmesser mit einer Reihe schwingender Zungen
US2618690A (en) * 1949-10-06 1952-11-18 Otmar M Stuetzer Transconductor employing line type field controlled semiconductor
GB788159A (en) * 1953-05-29 1957-12-23 Philco Corp Improvements in and relating to frequency sensitive electro-mechanical apparatus
US2898477A (en) * 1955-10-31 1959-08-04 Bell Telephone Labor Inc Piezoelectric field effect semiconductor device
NL281549A (fr) * 1961-09-25

Also Published As

Publication number Publication date
US3413573A (en) 1968-11-26
GB1125897A (en) 1968-09-05
DE1275219B (de) 1968-08-14
BE682735A (fr) 1966-12-01

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