FR1456281A - Diffused base transistor - Google Patents

Diffused base transistor

Info

Publication number
FR1456281A
FR1456281A FR40274A FR40274A FR1456281A FR 1456281 A FR1456281 A FR 1456281A FR 40274 A FR40274 A FR 40274A FR 40274 A FR40274 A FR 40274A FR 1456281 A FR1456281 A FR 1456281A
Authority
FR
France
Prior art keywords
base transistor
diffused base
diffused
transistor
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR40274A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Application granted granted Critical
Publication of FR1456281A publication Critical patent/FR1456281A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004Base region of bipolar transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
FR40274A 1964-12-01 1965-11-30 Diffused base transistor Expired FR1456281A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1964S0094398 DE1439481A1 (en) 1964-12-01 1964-12-01 transistor

Publications (1)

Publication Number Publication Date
FR1456281A true FR1456281A (en) 1966-10-21

Family

ID=7518673

Family Applications (1)

Application Number Title Priority Date Filing Date
FR40274A Expired FR1456281A (en) 1964-12-01 1965-11-30 Diffused base transistor

Country Status (7)

Country Link
AT (1) AT255492B (en)
CH (1) CH440463A (en)
DE (1) DE1439481A1 (en)
FR (1) FR1456281A (en)
GB (1) GB1127161A (en)
NL (1) NL6513639A (en)
SE (1) SE311046B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2088067A1 (en) * 1970-05-13 1972-01-07 Tsitovsky Ilya Semiconductor slice - with shaped p-n junctions
EP0296771A2 (en) * 1987-06-25 1988-12-28 SGS-THOMSON MICROELECTRONICS S.p.A. Semiconductor device with a buried layer, and method of manufacture

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4035500A1 (en) * 1990-11-08 1992-05-14 Bosch Gmbh Robert ELECTRONIC SWITCH
DE10160509A1 (en) * 2001-11-30 2003-06-12 Ihp Gmbh Semiconductor device and method for its manufacture
CN114975652B (en) * 2022-07-25 2022-12-23 浙江晶科能源有限公司 Photovoltaic cell and manufacturing method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2088067A1 (en) * 1970-05-13 1972-01-07 Tsitovsky Ilya Semiconductor slice - with shaped p-n junctions
EP0296771A2 (en) * 1987-06-25 1988-12-28 SGS-THOMSON MICROELECTRONICS S.p.A. Semiconductor device with a buried layer, and method of manufacture
EP0296771A3 (en) * 1987-06-25 1989-11-08 SGS-THOMSON MICROELECTRONICS S.p.A. Semiconductor device with a buried layer, and method of manufacture

Also Published As

Publication number Publication date
SE311046B (en) 1969-05-27
DE1439481A1 (en) 1968-11-21
GB1127161A (en) 1968-09-11
NL6513639A (en) 1966-06-02
CH440463A (en) 1967-07-31
AT255492B (en) 1967-07-10

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