FR1456281A - Diffused base transistor - Google Patents
Diffused base transistorInfo
- Publication number
- FR1456281A FR1456281A FR40274A FR40274A FR1456281A FR 1456281 A FR1456281 A FR 1456281A FR 40274 A FR40274 A FR 40274A FR 40274 A FR40274 A FR 40274A FR 1456281 A FR1456281 A FR 1456281A
- Authority
- FR
- France
- Prior art keywords
- base transistor
- diffused base
- diffused
- transistor
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1964S0094398 DE1439481A1 (en) | 1964-12-01 | 1964-12-01 | transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1456281A true FR1456281A (en) | 1966-10-21 |
Family
ID=7518673
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR40274A Expired FR1456281A (en) | 1964-12-01 | 1965-11-30 | Diffused base transistor |
Country Status (7)
Country | Link |
---|---|
AT (1) | AT255492B (en) |
CH (1) | CH440463A (en) |
DE (1) | DE1439481A1 (en) |
FR (1) | FR1456281A (en) |
GB (1) | GB1127161A (en) |
NL (1) | NL6513639A (en) |
SE (1) | SE311046B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2088067A1 (en) * | 1970-05-13 | 1972-01-07 | Tsitovsky Ilya | Semiconductor slice - with shaped p-n junctions |
EP0296771A2 (en) * | 1987-06-25 | 1988-12-28 | SGS-THOMSON MICROELECTRONICS S.p.A. | Semiconductor device with a buried layer, and method of manufacture |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4035500A1 (en) * | 1990-11-08 | 1992-05-14 | Bosch Gmbh Robert | ELECTRONIC SWITCH |
DE10160509A1 (en) * | 2001-11-30 | 2003-06-12 | Ihp Gmbh | Semiconductor device and method for its manufacture |
CN114975652B (en) * | 2022-07-25 | 2022-12-23 | 浙江晶科能源有限公司 | Photovoltaic cell and manufacturing method thereof |
-
1964
- 1964-12-01 DE DE1964S0094398 patent/DE1439481A1/en active Pending
-
1965
- 1965-10-21 NL NL6513639A patent/NL6513639A/xx unknown
- 1965-11-29 CH CH1644765A patent/CH440463A/en unknown
- 1965-11-30 AT AT1077465A patent/AT255492B/en active
- 1965-11-30 FR FR40274A patent/FR1456281A/en not_active Expired
- 1965-11-30 SE SE15499/65A patent/SE311046B/xx unknown
- 1965-11-30 GB GB5068765A patent/GB1127161A/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2088067A1 (en) * | 1970-05-13 | 1972-01-07 | Tsitovsky Ilya | Semiconductor slice - with shaped p-n junctions |
EP0296771A2 (en) * | 1987-06-25 | 1988-12-28 | SGS-THOMSON MICROELECTRONICS S.p.A. | Semiconductor device with a buried layer, and method of manufacture |
EP0296771A3 (en) * | 1987-06-25 | 1989-11-08 | SGS-THOMSON MICROELECTRONICS S.p.A. | Semiconductor device with a buried layer, and method of manufacture |
Also Published As
Publication number | Publication date |
---|---|
SE311046B (en) | 1969-05-27 |
DE1439481A1 (en) | 1968-11-21 |
GB1127161A (en) | 1968-09-11 |
NL6513639A (en) | 1966-06-02 |
CH440463A (en) | 1967-07-31 |
AT255492B (en) | 1967-07-10 |
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