FR1449487A - Improved transistor structure - Google Patents

Improved transistor structure

Info

Publication number
FR1449487A
FR1449487A FR34582A FR34582A FR1449487A FR 1449487 A FR1449487 A FR 1449487A FR 34582 A FR34582 A FR 34582A FR 34582 A FR34582 A FR 34582A FR 1449487 A FR1449487 A FR 1449487A
Authority
FR
France
Prior art keywords
transistor structure
improved transistor
improved
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR34582A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Priority to FR34582A priority Critical patent/FR1449487A/en
Application granted granted Critical
Publication of FR1449487A publication Critical patent/FR1449487A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
FR34582A 1964-10-13 1965-10-12 Improved transistor structure Expired FR1449487A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR34582A FR1449487A (en) 1964-10-13 1965-10-12 Improved transistor structure

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US40353864A 1964-10-13 1964-10-13
FR34582A FR1449487A (en) 1964-10-13 1965-10-12 Improved transistor structure

Publications (1)

Publication Number Publication Date
FR1449487A true FR1449487A (en) 1966-03-18

Family

ID=26166708

Family Applications (1)

Application Number Title Priority Date Filing Date
FR34582A Expired FR1449487A (en) 1964-10-13 1965-10-12 Improved transistor structure

Country Status (1)

Country Link
FR (1) FR1449487A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2436502A1 (en) * 1978-09-12 1980-04-11 Ankri David Plane structure hetero-junction bipolar transistor - is esp. for HF types and has doped emitter definition zone

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2436502A1 (en) * 1978-09-12 1980-04-11 Ankri David Plane structure hetero-junction bipolar transistor - is esp. for HF types and has doped emitter definition zone

Similar Documents

Publication Publication Date Title
CH428619A (en) Corselet
NL139416B (en) TRANSISTOR.
AT263079B (en) Field effect transistor
BR6786870D0 (en) IMIDAZOIS
CH430310A (en) Baumschüttler
AT246952B (en) Stizbank
AT260598B (en) Haymaker
BE789491Q (en) ELLIPSOGRAPHER
FR1449487A (en) Improved transistor structure
CH453507A (en) Junction transistor
FR1456326A (en) Switch transistor
DK117790B (en) Transistor.
CH463817A (en) Ophthalmometer
FR1437994A (en) Transistor structure
FR1471636A (en) Transistor structure
AT289179B (en) Leitblankenbahn
FR1353453A (en) Grouting-adjuster
FI36031A (en) Samlingsearm
FI36997A (en) Vätskespridare
BR6574623D0 (en) ACILLATE MYTHOSENES
CH435586A (en) Tent-cot
FR1443839A (en) Optical-electronic transistor
ES106905Y (en) Improved box-pack
ES104850Y (en) Switch-switch
ES106791Y (en) Reliquary