FR1445793A - Compositions de verre à base d'antimoine, de soufre et d'iode et dispositifs semiconducteurs en faisant usage - Google Patents

Compositions de verre à base d'antimoine, de soufre et d'iode et dispositifs semiconducteurs en faisant usage

Info

Publication number
FR1445793A
FR1445793A FR21529A FR21529A FR1445793A FR 1445793 A FR1445793 A FR 1445793A FR 21529 A FR21529 A FR 21529A FR 21529 A FR21529 A FR 21529A FR 1445793 A FR1445793 A FR 1445793A
Authority
FR
France
Prior art keywords
antimony
iodine
sulfur
semiconductor devices
making use
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR21529A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Co
Original Assignee
Minnesota Mining and Manufacturing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Minnesota Mining and Manufacturing Co filed Critical Minnesota Mining and Manufacturing Co
Application granted granted Critical
Publication of FR1445793A publication Critical patent/FR1445793A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/70Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices having only two electrodes and exhibiting negative resistance
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00Glass compositions
    • C03C3/32Non-oxide glass compositions, e.g. binary or ternary halides, sulfides or nitrides of germanium, selenium or tellurium
    • C03C3/321Chalcogenide glasses, e.g. containing S, Se, Te
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011Manufacture or treatment of multistable switching devices
    • H10N70/021Formation of switching materials, e.g. deposition of layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20Multistable switching devices, e.g. memristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/841Electrodes
    • H10N70/8418Electrodes adapted for focusing electric field or current, e.g. tip-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/881Switching materials
    • H10N70/882Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/881Switching materials
    • H10N70/882Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8822Sulfides, e.g. CuS

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Glass Compositions (AREA)
  • Joining Of Glass To Other Materials (AREA)
FR21529A 1964-06-19 1965-06-19 Compositions de verre à base d'antimoine, de soufre et d'iode et dispositifs semiconducteurs en faisant usage Expired FR1445793A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US37648264A 1964-06-19 1964-06-19
US466047A US3312922A (en) 1964-06-19 1965-06-22 Solid state switching device

Publications (1)

Publication Number Publication Date
FR1445793A true FR1445793A (fr) 1966-07-15

Family

ID=27007435

Family Applications (1)

Application Number Title Priority Date Filing Date
FR21529A Expired FR1445793A (fr) 1964-06-19 1965-06-19 Compositions de verre à base d'antimoine, de soufre et d'iode et dispositifs semiconducteurs en faisant usage

Country Status (5)

Country Link
US (1) US3312922A (fr)
DE (1) DE1514206A1 (fr)
FR (1) FR1445793A (fr)
GB (1) GB1117211A (fr)
NL (1) NL6507796A (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3418619A (en) * 1966-03-24 1968-12-24 Itt Saturable solid state nonrectifying switching device
US3709813A (en) * 1971-04-30 1973-01-09 Texas Instruments Inc Ion-selective electrochemical sensor
US3781748A (en) * 1971-05-28 1973-12-25 Us Navy Chalcogenide glass bolometer
US4492763A (en) * 1982-07-06 1985-01-08 Texas Instruments Incorporated Low dispersion infrared glass
US5077239A (en) * 1990-01-16 1991-12-31 Westinghouse Electric Corp. Chalcogenide glass, associated method and apparatus

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL251725A (fr) * 1959-06-03 1900-01-01
NL123202C (fr) * 1960-04-22
NL257146A (fr) * 1960-10-22
US3154503A (en) * 1961-01-12 1964-10-27 Int Resistance Co Resistance material and resistor made therefrom
NL284820A (fr) * 1961-11-06
US3117013A (en) * 1961-11-06 1964-01-07 Bell Telephone Labor Inc Glass composition
NL294762A (fr) * 1962-08-01
NL298178A (fr) * 1962-09-20

Also Published As

Publication number Publication date
US3312922A (en) 1967-04-04
NL6507796A (fr) 1965-12-20
GB1117211A (en) 1968-06-19
DE1514206A1 (de) 1970-10-08

Similar Documents

Publication Publication Date Title
FR1284341A (fr) Dispositif à décharge d'électrons
FR1367257A (fr) Agents d'unisson
FR1445793A (fr) Compositions de verre à base d'antimoine, de soufre et d'iode et dispositifs semiconducteurs en faisant usage
BE600778A (fr) Composition de catalyseur à base d'étain
FR1446510A (fr) Nouvelles compositions de verres à base d'antimoine, soufre et iode
CH426404A (de) Umschalt- und Mischvorrichtung
BE751293A (fr) Compositions et dispositifs electro-optiques
FR1423740A (fr) Four destiné notamment à la production d'iode 131
FR1516558A (fr) Dispositif de commutation à l'état solide
AT244013B (de) Glaszusammensetzung
FR1335360A (fr) Composition de blanchiment et ses applications
FR1415093A (fr) Verre destiné à l'incorporation de substances luminescentes
FR1320523A (fr) Composition de soudure à l'or
FR1361813A (fr) Compositions de verre
FR1505310A (fr) Fabrication de nouvelles compositions d'antigènes
FR1356197A (fr) Contact de semiconducteur
FR1474913A (fr) Composition adhésive à base d'élastomère
CH424999A (de) Halbleiterstromtor vom pnpn-Typ
FR1464220A (fr) Fabrication d'un dispositif semi-conducteur
FR1377877A (fr) Dispositif de commutation à semi-conducteur
FR1488595A (fr) Modification d'élastomères fluorocarbonés
FR1353061A (fr) Compositions d'agents organo-siliciques anti-buée
FR1355394A (fr) Dispositif semi-conducteur supportant une multiplicité d'électrodes
FR1541343A (fr) Composition à base d'agent anti-statique
FR85530E (fr) Compositions bitumineuses retardatrices d'inflammation