FR1424325A - Method for the fabrication by diffusion of silicon semiconductor elements - Google Patents

Method for the fabrication by diffusion of silicon semiconductor elements

Info

Publication number
FR1424325A
FR1424325A FR5168A FR5168A FR1424325A FR 1424325 A FR1424325 A FR 1424325A FR 5168 A FR5168 A FR 5168A FR 5168 A FR5168 A FR 5168A FR 1424325 A FR1424325 A FR 1424325A
Authority
FR
France
Prior art keywords
fabrication
diffusion
semiconductor elements
silicon semiconductor
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR5168A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
BBC Brown Boveri France SA
Original Assignee
BBC Brown Boveri AG Switzerland
BBC Brown Boveri France SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri AG Switzerland, BBC Brown Boveri France SA filed Critical BBC Brown Boveri AG Switzerland
Priority to FR5168A priority Critical patent/FR1424325A/en
Application granted granted Critical
Publication of FR1424325A publication Critical patent/FR1424325A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
FR5168A 1964-02-13 1965-02-11 Method for the fabrication by diffusion of silicon semiconductor elements Expired FR1424325A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR5168A FR1424325A (en) 1964-02-13 1965-02-11 Method for the fabrication by diffusion of silicon semiconductor elements

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEB0075401 1964-02-13
FR5168A FR1424325A (en) 1964-02-13 1965-02-11 Method for the fabrication by diffusion of silicon semiconductor elements

Publications (1)

Publication Number Publication Date
FR1424325A true FR1424325A (en) 1966-01-07

Family

ID=25966956

Family Applications (1)

Application Number Title Priority Date Filing Date
FR5168A Expired FR1424325A (en) 1964-02-13 1965-02-11 Method for the fabrication by diffusion of silicon semiconductor elements

Country Status (1)

Country Link
FR (1) FR1424325A (en)

Similar Documents

Publication Publication Date Title
FR2096444A1 (en) DEVICE FOR CONTROLLING THE TEMPERATURE OF THE JUNCTION OF A SEMICONDUCTOR DEVICE SUCH AS A THYRISTOR
FR1435786A (en) Process for the preparation of p-n junctions in silicon
FR1445508A (en) Method of manufacturing a semiconductor device by diffusion
FR1448026A (en) Method for manufacturing a semiconductor controlled rectifier of the pnpn type
FR1451676A (en) Method of manufacturing a semiconductor device
CH501980A (en) Monolithic, integrated semiconductor device
FR1372252A (en) Gallium arsenide semiconductor diode and method for its manufacture
CH419356A (en) Process for the manufacture of an active element for a silicon diode and an active element obtained by this process
FR1424325A (en) Method for the fabrication by diffusion of silicon semiconductor elements
FR1395946A (en) Pigmentary silicon carbide manufacturing process
FR1517452A (en) Method for producing pure semiconductor materials such as silicon and semiconductor materials obtained by the method
FR1482649A (en) Grain oriented silicon steel fabrication process
FR93053E (en) Method and device for the manufacture of concrete elements.
FR1440439A (en) Diffusion process for the manufacture of semiconductor elements
FR1463261A (en) Manufacturing process for forged silicon steels and steels obtained by this process
FR1442535A (en) Selective etching process for silicon
FR1500841A (en) Manufacturing process of a silicon planar transistor
BE780423A (en) PROCESS FOR THE MANUFACTURING OF SILICON INTEGRATED CIRCUITS
FR1373247A (en) Semiconductor device and method for manufacturing this device
FR1212780A (en) Silicon Carbide for Semiconductors
BE601416A (en) A method of manufacturing a silicon semiconductor device.
FR1460778A (en) Silicon Carbide Manufacturing Process
FR1372975A (en) Silicon steel
FR1397154A (en) Method for depositing silicon or other semiconductor element
FR1432750A (en) Silicon oxidation process