FR1418609A - Procédé de fabrication d'un élément transistor et élément obtenu - Google Patents
Procédé de fabrication d'un élément transistor et élément obtenuInfo
- Publication number
- FR1418609A FR1418609A FR999685A FR999685A FR1418609A FR 1418609 A FR1418609 A FR 1418609A FR 999685 A FR999685 A FR 999685A FR 999685 A FR999685 A FR 999685A FR 1418609 A FR1418609 A FR 1418609A
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- transistor
- transistor element
- element obtained
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR999685A FR1418609A (fr) | 1963-12-27 | 1964-12-23 | Procédé de fabrication d'un élément transistor et élément obtenu |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US333882A US3283223A (en) | 1963-12-27 | 1963-12-27 | Transistor and method of fabrication to minimize surface recombination effects |
FR999685A FR1418609A (fr) | 1963-12-27 | 1964-12-23 | Procédé de fabrication d'un élément transistor et élément obtenu |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1418609A true FR1418609A (fr) | 1965-11-19 |
Family
ID=26211975
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR999685A Expired FR1418609A (fr) | 1963-12-27 | 1964-12-23 | Procédé de fabrication d'un élément transistor et élément obtenu |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR1418609A (fr) |
-
1964
- 1964-12-23 FR FR999685A patent/FR1418609A/fr not_active Expired
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CH490268A (fr) | Procédé de fabrication d'un élément de rembourrage | |
FR1434929A (fr) | Procédé de fabrication d'un écran courbe et écran ainsi obtenu | |
FR89249E (fr) | Procédé de fabrication d'un volant de direction et volant ainsi obtenu | |
FR1513060A (fr) | Procédé de fabrication d'un élément de construction | |
FR1458019A (fr) | Procédé de fabrication d'un transistor à base métallique | |
CH431655A (fr) | Procédé de fabrication d'un dispositif de connexion | |
FR1513645A (fr) | Procédé de fabrication d'un transistor | |
BE605638A (fr) | Procédé de fabrication d'un élément superconducteur | |
CH438743A (fr) | Procédé de fabrication d'un copolymère | |
FR1418609A (fr) | Procédé de fabrication d'un élément transistor et élément obtenu | |
FR1323870A (fr) | Procédé de fabrication d'un élément de frottement | |
FR1499015A (fr) | Procédé de fabrication d'un bobinage | |
CH421403A (fr) | Procédé de fabrication d'un bigoudi auto-fixant et bigoudi obtenu par ce procédé | |
FR83371E (fr) | Procédé de fabrication d'un livret de famille et livret fabriqué suivant ce procédé | |
FR86315E (fr) | élément semi-conducteur et procédé pour sa fabrication | |
CH388234A (fr) | Procédé de fabrication d'un article à ailettes et article à ailettes obtenu par ce procédé | |
LU45931A1 (fr) | Procédé de fabrication d'un éjecto-convecteur double et éjecto-convecteur double fabriqué selon de procédé | |
FR1364954A (fr) | Procédé de fabrication d'un boîtier calorifuge | |
FR1531539A (fr) | Procédé de fabrication d'un transistor | |
CH394921A (fr) | Procédé de fabrication d'un élément en béton et élément obtenu au moyen de ce procédé | |
FR87109E (fr) | Procédé de fabrication d'un écran courbe et écran ainsi obtenu | |
FR1425087A (fr) | Procédé de fabrication d'un transistor | |
FR1354558A (fr) | Procédé de fabrication d'un élément semi-conducteur | |
FR1390405A (fr) | Procédé de fabrication d'un élément de liaison et élément ainsi obtenu | |
FR1537645A (fr) | Procédé de fabrication d'un transistor planaire |