FR1415513A - Composant semi-conducteur comportant un corps semi-conducteur essentiellement monocristallin et quatre zones d'un type alternant de conductivité - Google Patents

Composant semi-conducteur comportant un corps semi-conducteur essentiellement monocristallin et quatre zones d'un type alternant de conductivité

Info

Publication number
FR1415513A
FR1415513A FR938371A FR938371A FR1415513A FR 1415513 A FR1415513 A FR 1415513A FR 938371 A FR938371 A FR 938371A FR 938371 A FR938371 A FR 938371A FR 1415513 A FR1415513 A FR 1415513A
Authority
FR
France
Prior art keywords
zones
conductivity
essentially single
alternating type
semiconductor body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR938371A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens Corp
Original Assignee
Siemens Schuckertwerke AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens Corp filed Critical Siemens Schuckertwerke AG
Application granted granted Critical
Publication of FR1415513A publication Critical patent/FR1415513A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
FR938371A 1962-06-19 1963-06-17 Composant semi-conducteur comportant un corps semi-conducteur essentiellement monocristallin et quatre zones d'un type alternant de conductivité Expired FR1415513A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES79974A DE1209660B (de) 1962-06-19 1962-06-19 Steuerbares Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper und vier Zonen abwechselnd entgegengesetzten Leitfaehigkeitstyps

Publications (1)

Publication Number Publication Date
FR1415513A true FR1415513A (fr) 1965-10-29

Family

ID=7508574

Family Applications (1)

Application Number Title Priority Date Filing Date
FR938371A Expired FR1415513A (fr) 1962-06-19 1963-06-17 Composant semi-conducteur comportant un corps semi-conducteur essentiellement monocristallin et quatre zones d'un type alternant de conductivité

Country Status (7)

Country Link
US (1) US3392313A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CH (1) CH396229A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE1209660B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR1415513A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1037804A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL290680A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SE (1) SE301192B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3832709A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Thyristor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2959681A (en) * 1959-06-18 1960-11-08 Fairchild Semiconductor Semiconductor scanning device
NL264084A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1959-06-23
DE1103389B (de) * 1959-10-14 1961-03-30 Siemens Ag Schaltanordnung mit einer Vierschichthalbleiteranordnung
US3175934A (en) * 1960-01-19 1965-03-30 Hitachi Ltd Semiconductor switching element and process for producing the same
DE1133038B (de) * 1960-05-10 1962-07-12 Siemens Ag Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper undvier Zonen abwechselnden Leitfaehigkeitstyps
NL268728A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1960-06-10
NL265766A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1960-06-10
BE623187A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1961-10-06

Also Published As

Publication number Publication date
DE1209660C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1966-10-13
GB1037804A (en) 1966-08-03
NL290680A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE1209660B (de) 1966-01-27
CH396229A (de) 1965-07-31
US3392313A (en) 1968-07-09
SE301192B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1968-05-27

Similar Documents

Publication Publication Date Title
GB1415355A (en) Chair and method of making same
BE759006A (fr) Copolymeres greffes et preparation de polyurethanes
BR7205382D0 (pt) Mini-bloco de construcao e jogo de tais mini-blocos
BR7205393D0 (pt) Mini-bloco de construcao e jogo de tais mini-blocos
FR1227736A (fr) Procédé pour le traitement de surface d'éléments semi-conducteurs comportant plusieurs électrodes et au moins une jonction p-n
HK59476A (en) Semiconductor devices and methods of making semiconductor devices
MY6900225A (en) Joined structures and methods of making same
BR7206661D0 (pt) Conjunto de para-raios e para-raios
FR1415513A (fr) Composant semi-conducteur comportant un corps semi-conducteur essentiellement monocristallin et quatre zones d'un type alternant de conductivité
BE784497A (fr) Elastomere de perfluoro-olefine et de fluorure de vinylidene
BE628586A (fr) Cétones bicycliques et leur préparation
IT967077B (it) Procedimento ed apparecchiatura per il trattamento di articoli di calzetteria
ZA714176B (en) Prophylaxis and treatment of cardiac disorders
IL37953A0 (en) Substituted oxazepines and method of use
IT975770B (it) Procedimento ed apparecchio di incapsulamento semiautomatico particolarmente di sostanze nucleari
ZA714113B (en) Prophylaxis and treatment of cardiac disorders
ZA714115B (en) Prophylaxis and treatment of cardiac disorders
GB1364682A (en) Treatment of fats and oils
BE617184A (fr) Systéme à semi-conducteurs constitue par u corps semi-conducteur essentiellement monocristallin et quatre zones dont les types de conductibilité sont alternés
FR1511965A (fr) Bis-thiosemicarbazones et leur préparation
FR1463948A (fr) Thio-urées et leur préparation
ZA727251B (en) Novel diuretics and agents useful in the treatment of hyperaldosteronism
IT979667B (it) Procedimento per il trattamento di rifiuti ed impianto per l at tuazione di detto procedimento
ZA714116B (en) Prophylaxis and treatment of cardiac disorders
FR1329855A (fr) Dicétones de la série de l'androstane et leur préparation