FR1396998A - Transistron plan perfectionné de puissance - Google Patents

Transistron plan perfectionné de puissance

Info

Publication number
FR1396998A
FR1396998A FR976719A FR976719A FR1396998A FR 1396998 A FR1396998 A FR 1396998A FR 976719 A FR976719 A FR 976719A FR 976719 A FR976719 A FR 976719A FR 1396998 A FR1396998 A FR 1396998A
Authority
FR
France
Prior art keywords
transistron
advanced power
power plan
plan
advanced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR976719A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Technologies Corp
Original Assignee
United Aircraft Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Aircraft Corp filed Critical United Aircraft Corp
Application granted granted Critical
Publication of FR1396998A publication Critical patent/FR1396998A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
FR976719A 1963-07-09 1964-06-02 Transistron plan perfectionné de puissance Expired FR1396998A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US293664A US3252063A (en) 1963-07-09 1963-07-09 Planar power transistor having all contacts on the same side thereof

Publications (1)

Publication Number Publication Date
FR1396998A true FR1396998A (fr) 1965-04-23

Family

ID=23130017

Family Applications (1)

Application Number Title Priority Date Filing Date
FR976719A Expired FR1396998A (fr) 1963-07-09 1964-06-02 Transistron plan perfectionné de puissance

Country Status (3)

Country Link
US (1) US3252063A (fr)
FR (1) FR1396998A (fr)
GB (1) GB1050417A (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3341755A (en) * 1964-03-20 1967-09-12 Westinghouse Electric Corp Switching transistor structure and method of making the same
US3697830A (en) * 1964-08-10 1972-10-10 Gte Sylvania Inc Semiconductor switching device
US3922706A (en) * 1965-07-31 1975-11-25 Telefunken Patent Transistor having emitter with high circumference-surface area ratio
US3909837A (en) * 1968-12-31 1975-09-30 Texas Instruments Inc High-speed transistor with rectifying contact connected between base and collector
US3704398A (en) * 1970-02-14 1972-11-28 Nippon Electric Co Multi-emitter power transistor having emitter region arrangement for achieving substantially uniform emitter-base junction temperatures
US3703420A (en) * 1970-03-03 1972-11-21 Ibm Lateral transistor structure and process for forming the same
US3786493A (en) * 1972-08-10 1974-01-15 Bell Telephone Labor Inc Analog to digital converter using a drift transistor
US4513306A (en) * 1982-12-27 1985-04-23 Motorola, Inc. Current ratioing device structure
JPS59210668A (ja) * 1983-05-16 1984-11-29 Fujitsu Ltd 半導体装置
US4660069A (en) * 1983-12-08 1987-04-21 Motorola, Inc. Device with captivate chip capacitor devices and method of making the same
US5723897A (en) * 1995-06-07 1998-03-03 Vtc Inc. Segmented emitter low noise transistor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2666814A (en) * 1949-04-27 1954-01-19 Bell Telephone Labor Inc Semiconductor translating device
DE1073111B (de) * 1954-12-02 1960-01-14 Siemens Schuckertwerke Aktiengesellschaft Berlin und Erlangen Verfahren zur Herstellung eines Flachentransistors mit einer Oberflachenschicht erhöhter Storstellenkonzentration an den freien Stellen zwischen den Elektroden an einem einkristallmen Halbleiterkörper
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure
NL123575C (fr) * 1960-04-01
US3090873A (en) * 1960-06-21 1963-05-21 Bell Telephone Labor Inc Integrated semiconductor switching device

Also Published As

Publication number Publication date
GB1050417A (fr)
US3252063A (en) 1966-05-17

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