FR1379254A - Controllable silicon cell - Google Patents

Controllable silicon cell

Info

Publication number
FR1379254A
FR1379254A FR2469A FR90002469A FR1379254A FR 1379254 A FR1379254 A FR 1379254A FR 2469 A FR2469 A FR 2469A FR 90002469 A FR90002469 A FR 90002469A FR 1379254 A FR1379254 A FR 1379254A
Authority
FR
France
Prior art keywords
controllable silicon
silicon cell
cell
controllable
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR2469A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Application granted granted Critical
Publication of FR1379254A publication Critical patent/FR1379254A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
FR2469A 1962-12-19 1963-12-19 Controllable silicon cell Expired FR1379254A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1962L0043740 DE1257975B (en) 1962-12-19 1962-12-19 Controllable semiconductor rectifier with at least four zones

Publications (1)

Publication Number Publication Date
FR1379254A true FR1379254A (en) 1964-11-20

Family

ID=7270402

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2469A Expired FR1379254A (en) 1962-12-19 1963-12-19 Controllable silicon cell

Country Status (3)

Country Link
DE (1) DE1257975B (en)
FR (1) FR1379254A (en)
NL (2) NL141711B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3408545A (en) * 1964-07-27 1968-10-29 Gen Electric Semiconductor rectifier with improved turn-on and turn-off characteristics
US3614556A (en) * 1968-04-16 1971-10-19 Tokyo Shibaura Electric Co Magnetosensitive semiconductor switching device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1132247B (en) * 1959-01-30 1962-06-28 Siemens Ag Controlled four-layer triode with four semiconductor layers of alternating conductivity type

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3408545A (en) * 1964-07-27 1968-10-29 Gen Electric Semiconductor rectifier with improved turn-on and turn-off characteristics
US3614556A (en) * 1968-04-16 1971-10-19 Tokyo Shibaura Electric Co Magnetosensitive semiconductor switching device

Also Published As

Publication number Publication date
NL141711B (en) 1974-03-15
DE1257975B (en) 1968-01-04
NL302103A (en)

Similar Documents

Publication Publication Date Title
CH468719A (en) Semiconductor device
CH409270A (en) Serving device
FR1320682A (en) Photoelectric cell
CH429973A (en) Controllable semiconductor device
AT239998B (en) Holding device
FR1379254A (en) Controllable silicon cell
CH396220A (en) Semiconductor device
FR1313941A (en) Improvements to grinding
FR1328195A (en) Silicon transistor
FR1537646A (en) Silicon planar transistor
FR1350412A (en) Semiconductor device
CH416840A (en) Semiconductor device
CH396221A (en) Semiconductor device
FR1365874A (en) Silicon controlled rectifier
FR1348742A (en) Semiconductor device
FR1287474A (en) Improvements to silicon solar cells
BE617448A (en) Photoelectric cell
CH427039A (en) Semiconductor device
AT238764B (en) Ski lift carrier
FR1496453A (en) Silicon thyratrons
CA669463A (en) Gold silicon bond
AU263836B2 (en) Semiconductor device assemblage
FR1321612A (en) Symmetrical seats
BE627678A (en) Photoelectric cell
FR1372216A (en) Semiconductor device