FR1365610A - Triodes hétérojonctions - Google Patents
Triodes hétérojonctionsInfo
- Publication number
- FR1365610A FR1365610A FR939074A FR939074A FR1365610A FR 1365610 A FR1365610 A FR 1365610A FR 939074 A FR939074 A FR 939074A FR 939074 A FR939074 A FR 939074A FR 1365610 A FR1365610 A FR 1365610A
- Authority
- FR
- France
- Prior art keywords
- triodes
- heterojunction
- heterojunction triodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/7606—Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
- H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US206304A US3209215A (en) | 1962-06-29 | 1962-06-29 | Heterojunction triode |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1365610A true FR1365610A (fr) | 1964-07-03 |
Family
ID=22765782
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR939074A Expired FR1365610A (fr) | 1962-06-29 | 1963-06-24 | Triodes hétérojonctions |
Country Status (8)
Country | Link |
---|---|
US (1) | US3209215A (fr) |
BE (1) | BE634299A (fr) |
CH (1) | CH408220A (fr) |
DE (1) | DE1263934B (fr) |
FR (1) | FR1365610A (fr) |
GB (1) | GB995703A (fr) |
NL (1) | NL294716A (fr) |
SE (1) | SE315950B (fr) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3309553A (en) * | 1963-08-16 | 1967-03-14 | Varian Associates | Solid state radiation emitters |
US3486949A (en) * | 1966-03-25 | 1969-12-30 | Massachusetts Inst Technology | Semiconductor heterojunction diode |
US3467896A (en) * | 1966-03-28 | 1969-09-16 | Varian Associates | Heterojunctions and domain control in bulk negative conductivity semiconductors |
US3433684A (en) * | 1966-09-13 | 1969-03-18 | North American Rockwell | Multilayer semiconductor heteroepitaxial structure |
US4035665A (en) * | 1974-01-24 | 1977-07-12 | Commissariat A L'energie Atomique | Charge-coupled device comprising semiconductors having different forbidden band widths |
US4173763A (en) * | 1977-06-09 | 1979-11-06 | International Business Machines Corporation | Heterojunction tunneling base transistor |
US4326208A (en) * | 1980-03-26 | 1982-04-20 | International Business Machines Corporation | Semiconductor inversion layer transistor |
US4910562A (en) * | 1982-04-26 | 1990-03-20 | International Business Machines Corporation | Field induced base transistor |
US4532533A (en) * | 1982-04-27 | 1985-07-30 | International Business Machines Corporation | Ballistic conduction semiconductor device |
US4728616A (en) * | 1982-09-17 | 1988-03-01 | Cornell Research Foundation, Inc. | Ballistic heterojunction bipolar transistor |
US4672404A (en) * | 1982-09-17 | 1987-06-09 | Cornell Research Foundation, Inc. | Ballistic heterojunction bipolar transistor |
US4649405A (en) * | 1984-04-10 | 1987-03-10 | Cornell Research Foundation, Inc. | Electron ballistic injection and extraction for very high efficiency, high frequency transferred electron devices |
EP0323249B1 (fr) * | 1987-12-29 | 1993-11-03 | Nec Corporation | Structure cristalline à semi-conducteur et son procédé de fabrication |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB723808A (en) * | 1951-05-05 | 1955-02-09 | Western Electric Co | Signal translating devices utilizing semiconductive bodies |
DE1100821B (de) * | 1954-04-07 | 1961-03-02 | Telefunken Gmbh | Legierungsverfahren zur Herstellung von mehreren durch sehr duenne Mittelschichten getrennten p-n-UEbergaengen in Halbleiterkoerpern |
US2817783A (en) * | 1955-07-13 | 1957-12-24 | Sylvania Electric Prod | Electroluminescent device |
FR1204019A (fr) * | 1957-10-03 | 1960-01-22 | British Thomson Houston Co Ltd | Perfectionnements relatifs aux organes semi-conducteurs |
FR1193194A (fr) * | 1958-03-12 | 1959-10-30 | Perfectionnements aux procédés de fabrication par diffusion des transistors et des redresseurs à jonctions | |
US3041509A (en) * | 1958-08-11 | 1962-06-26 | Bendix Corp | Semiconductor device |
-
0
- BE BE634299D patent/BE634299A/xx unknown
- NL NL294716D patent/NL294716A/xx unknown
-
1962
- 1962-06-29 US US206304A patent/US3209215A/en not_active Expired - Lifetime
-
1963
- 1963-06-19 GB GB24302/63A patent/GB995703A/en not_active Expired
- 1963-06-20 DE DEJ23907A patent/DE1263934B/de active Pending
- 1963-06-24 FR FR939074A patent/FR1365610A/fr not_active Expired
- 1963-06-25 CH CH778663A patent/CH408220A/de unknown
- 1963-06-28 SE SE7243/63A patent/SE315950B/xx unknown
Also Published As
Publication number | Publication date |
---|---|
CH408220A (de) | 1966-02-28 |
DE1263934B (de) | 1968-03-21 |
NL294716A (fr) | 1900-01-01 |
GB995703A (en) | 1965-06-23 |
BE634299A (fr) | 1900-01-01 |
US3209215A (en) | 1965-09-28 |
SE315950B (fr) | 1969-10-13 |
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