FR1363491A - Adhering metal layer for electrical connections, in particular for semiconductor components - Google Patents

Adhering metal layer for electrical connections, in particular for semiconductor components

Info

Publication number
FR1363491A
FR1363491A FR935770A FR935770A FR1363491A FR 1363491 A FR1363491 A FR 1363491A FR 935770 A FR935770 A FR 935770A FR 935770 A FR935770 A FR 935770A FR 1363491 A FR1363491 A FR 1363491A
Authority
FR
France
Prior art keywords
metal layer
electrical connections
semiconductor components
adhering metal
adhering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR935770A
Other languages
French (fr)
Inventor
Stanley Gerald Ayling
Bernard Douglas Mills
Roland Francis Payne
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB20201/62A external-priority patent/GB1010111A/en
Priority claimed from GB36013/62A external-priority patent/GB1044689A/en
Priority claimed from GB39650/62A external-priority patent/GB1023531A/en
Priority claimed from DEST19973A external-priority patent/DE1179280B/en
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Priority to FR935770A priority Critical patent/FR1363491A/en
Application granted granted Critical
Publication of FR1363491A publication Critical patent/FR1363491A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/40—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal all coatings being metal coatings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/027—Graded interfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
FR935770A 1962-05-25 1963-05-22 Adhering metal layer for electrical connections, in particular for semiconductor components Expired FR1363491A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR935770A FR1363491A (en) 1962-05-25 1963-05-22 Adhering metal layer for electrical connections, in particular for semiconductor components

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
GB20201/62A GB1010111A (en) 1962-05-25 1962-05-25 Vapour deposition of metallic films
GB36013/62A GB1044689A (en) 1962-09-21 1962-09-21 Improvements in or relating to mountings for semi-conductor devices
GB39650/62A GB1023531A (en) 1962-05-25 1962-10-19 Improvements in or relating to semiconductor devices
DEST19973A DE1179280B (en) 1962-11-09 1962-11-09 Process for the production of solderable contact points
GB48863/62A GB1024216A (en) 1962-05-25 1962-12-28 Improvements in or relating to circuit modules including semiconductor devices
FR935770A FR1363491A (en) 1962-05-25 1963-05-22 Adhering metal layer for electrical connections, in particular for semiconductor components

Publications (1)

Publication Number Publication Date
FR1363491A true FR1363491A (en) 1964-06-12

Family

ID=27544931

Family Applications (1)

Application Number Title Priority Date Filing Date
FR935770A Expired FR1363491A (en) 1962-05-25 1963-05-22 Adhering metal layer for electrical connections, in particular for semiconductor components

Country Status (1)

Country Link
FR (1) FR1363491A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1281035B (en) * 1965-01-22 1968-10-24 Itt Ind Ges Mit Beschraenkter Method for applying a contact layer on a silicon semiconductor body
FR2170846A1 (en) * 1972-02-03 1973-09-21 Garyainov Stanislav
US4042954A (en) * 1975-05-19 1977-08-16 National Semiconductor Corporation Method for forming gang bonding bumps on integrated circuit semiconductor devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1281035B (en) * 1965-01-22 1968-10-24 Itt Ind Ges Mit Beschraenkter Method for applying a contact layer on a silicon semiconductor body
FR2170846A1 (en) * 1972-02-03 1973-09-21 Garyainov Stanislav
US4042954A (en) * 1975-05-19 1977-08-16 National Semiconductor Corporation Method for forming gang bonding bumps on integrated circuit semiconductor devices

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