FR1336643A - Process for doping semiconductor materials by a high temperature surface reaction with a doping substance, followed by zone refining - Google Patents

Process for doping semiconductor materials by a high temperature surface reaction with a doping substance, followed by zone refining

Info

Publication number
FR1336643A
FR1336643A FR913074A FR913074A FR1336643A FR 1336643 A FR1336643 A FR 1336643A FR 913074 A FR913074 A FR 913074A FR 913074 A FR913074 A FR 913074A FR 1336643 A FR1336643 A FR 1336643A
Authority
FR
France
Prior art keywords
doping
followed
high temperature
semiconductor materials
surface reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR913074A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WR Grace and Co
Original Assignee
WR Grace and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WR Grace and Co filed Critical WR Grace and Co
Priority to FR913074A priority Critical patent/FR1336643A/en
Application granted granted Critical
Publication of FR1336643A publication Critical patent/FR1336643A/en
Priority claimed from US308310A external-priority patent/US3162526A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
FR913074A 1961-10-26 1962-10-23 Process for doping semiconductor materials by a high temperature surface reaction with a doping substance, followed by zone refining Expired FR1336643A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR913074A FR1336643A (en) 1961-10-26 1962-10-23 Process for doping semiconductor materials by a high temperature surface reaction with a doping substance, followed by zone refining

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14775361A 1961-10-26 1961-10-26
FR913074A FR1336643A (en) 1961-10-26 1962-10-23 Process for doping semiconductor materials by a high temperature surface reaction with a doping substance, followed by zone refining
US308310A US3162526A (en) 1961-10-26 1963-09-11 Method of doping semiconductor materials

Publications (1)

Publication Number Publication Date
FR1336643A true FR1336643A (en) 1963-08-30

Family

ID=27246866

Family Applications (1)

Application Number Title Priority Date Filing Date
FR913074A Expired FR1336643A (en) 1961-10-26 1962-10-23 Process for doping semiconductor materials by a high temperature surface reaction with a doping substance, followed by zone refining

Country Status (1)

Country Link
FR (1) FR1336643A (en)

Similar Documents

Publication Publication Date Title
BE609113A (en) Process for the application of marks on textile products.
FR1503267A (en) Process for preparing a stabilized enzymatic composition
FR87145E (en) Process for the preparation of thermoplastic linear copolyesters exhibiting a softening temperature greater than 100 ยต deg. vs
FR1336643A (en) Process for doping semiconductor materials by a high temperature surface reaction with a doping substance, followed by zone refining
BE575484A (en) Process for the preparation of new isomeric compounds, and produced using this process.
FR1328213A (en) Process for producing a refractory material formed from aluminum nitride
FR93451E (en) A process for the manufacture of a 2- (tetrahydronaphthyl-1 ') - amino-imidazoline.
FR1504635A (en) Process for preparing organic tin compounds
FR1179695A (en) Process for preparing a catalytic cracking feed
BE622661A (en) Process for the treatment of a chemical material reducible by hydrosulphite.
FR1310879A (en) Process for the treatment of a chemical material reducible by hydrosulphite
FR1306336A (en) Process for recovering heat from mixtures of organic reaction products
FR1356703A (en) Process for introducing nuclear fuel into an installation for the production of high temperature plasma
FR1289498A (en) Process for the production of high purity antimony
FR1299300A (en) Process for the production of supplementary feed for animals
FR1337325A (en) Process for the polymerization of vinyl aromatics with rubbery materials, and compounds produced by this process
FR1293265A (en) Process for the preparation of sulfonated organic compounds
FR1319464A (en) Process for heating blast furnace winds to high temperature
OA01091A (en) Process for the preparation of compounds with therapeutic action.
FR1392376A (en) Process for the hydrogenation of water-miscible acetylenic compounds to obtain ethylenic compounds
FR1470479A (en) Chemical process for the preparation of ethylbenzene hydroperoxide
BE594593A (en) Process for zone melting, free from crucible of semiconductor material
GB1062548A (en) Process for the continuous production of the reaction products of phosphorus and sulphur
FR1046028A (en) Process for carrying out chemical reactions at high temperatures
BE625130A (en) Process for cooling a web of material by immersion.