FR1298131A - Perfectionnements apportés aux dispositifs redresseurs à semi-conducteur - Google Patents

Perfectionnements apportés aux dispositifs redresseurs à semi-conducteur

Info

Publication number
FR1298131A
FR1298131A FR871206A FR871206A FR1298131A FR 1298131 A FR1298131 A FR 1298131A FR 871206 A FR871206 A FR 871206A FR 871206 A FR871206 A FR 871206A FR 1298131 A FR1298131 A FR 1298131A
Authority
FR
France
Prior art keywords
semiconductor rectifier
rectifier devices
devices
semiconductor
rectifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR871206A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Associated Electrical Industries Ltd
Original Assignee
Associated Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Associated Electrical Industries Ltd filed Critical Associated Electrical Industries Ltd
Priority to FR871206A priority Critical patent/FR1298131A/fr
Application granted granted Critical
Publication of FR1298131A publication Critical patent/FR1298131A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
FR871206A 1961-01-12 1961-08-21 Perfectionnements apportés aux dispositifs redresseurs à semi-conducteur Expired FR1298131A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR871206A FR1298131A (fr) 1961-01-12 1961-08-21 Perfectionnements apportés aux dispositifs redresseurs à semi-conducteur

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB134061 1961-01-12
FR871206A FR1298131A (fr) 1961-01-12 1961-08-21 Perfectionnements apportés aux dispositifs redresseurs à semi-conducteur

Publications (1)

Publication Number Publication Date
FR1298131A true FR1298131A (fr) 1962-07-06

Family

ID=26191949

Family Applications (1)

Application Number Title Priority Date Filing Date
FR871206A Expired FR1298131A (fr) 1961-01-12 1961-08-21 Perfectionnements apportés aux dispositifs redresseurs à semi-conducteur

Country Status (1)

Country Link
FR (1) FR1298131A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3432730A (en) * 1966-09-06 1969-03-11 Webb James E Semiconductor p-n junction stress and strain sensor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3432730A (en) * 1966-09-06 1969-03-11 Webb James E Semiconductor p-n junction stress and strain sensor
US3549435A (en) * 1966-09-06 1970-12-22 Webb James E Method of making semiconductor p-n junction stress and strain sensor

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