FR1282910A - Method of growth without dislocation of semiconductor crystals - Google Patents

Method of growth without dislocation of semiconductor crystals

Info

Publication number
FR1282910A
FR1282910A FR854225A FR854225A FR1282910A FR 1282910 A FR1282910 A FR 1282910A FR 854225 A FR854225 A FR 854225A FR 854225 A FR854225 A FR 854225A FR 1282910 A FR1282910 A FR 1282910A
Authority
FR
France
Prior art keywords
dislocation
growth
semiconductor crystals
crystals
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR854225A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Compagnie Francaise Thomson Houston SA
Original Assignee
Compagnie Francaise Thomson Houston SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12206A external-priority patent/US3135585A/en
Application filed by Compagnie Francaise Thomson Houston SA filed Critical Compagnie Francaise Thomson Houston SA
Priority to FR854225A priority Critical patent/FR1282910A/en
Application granted granted Critical
Publication of FR1282910A publication Critical patent/FR1282910A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
FR854225A 1960-03-01 1961-03-01 Method of growth without dislocation of semiconductor crystals Expired FR1282910A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR854225A FR1282910A (en) 1960-03-01 1961-03-01 Method of growth without dislocation of semiconductor crystals

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12206A US3135585A (en) 1960-03-01 1960-03-01 Method of growing dislocation-free semiconductor crystals
FR854225A FR1282910A (en) 1960-03-01 1961-03-01 Method of growth without dislocation of semiconductor crystals

Publications (1)

Publication Number Publication Date
FR1282910A true FR1282910A (en) 1962-01-27

Family

ID=26189485

Family Applications (1)

Application Number Title Priority Date Filing Date
FR854225A Expired FR1282910A (en) 1960-03-01 1961-03-01 Method of growth without dislocation of semiconductor crystals

Country Status (1)

Country Link
FR (1) FR1282910A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1519912B1 (en) * 1963-10-15 1970-06-18 Texas Instruments Inc Process for the production of dislocation-free, single-crystal semiconductor material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1519912B1 (en) * 1963-10-15 1970-06-18 Texas Instruments Inc Process for the production of dislocation-free, single-crystal semiconductor material

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