FR1264317A - Procédé de préparation de mono-cristal dendritique - Google Patents

Procédé de préparation de mono-cristal dendritique

Info

Publication number
FR1264317A
FR1264317A FR834774A FR834774A FR1264317A FR 1264317 A FR1264317 A FR 1264317A FR 834774 A FR834774 A FR 834774A FR 834774 A FR834774 A FR 834774A FR 1264317 A FR1264317 A FR 1264317A
Authority
FR
France
Prior art keywords
mono
crystal
preparing dendritic
dendritic
preparing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR834774A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Priority to FR834774A priority Critical patent/FR1264317A/fr
Application granted granted Critical
Publication of FR1264317A publication Critical patent/FR1264317A/fr
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
FR834774A 1959-08-04 1960-08-02 Procédé de préparation de mono-cristal dendritique Expired FR1264317A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR834774A FR1264317A (fr) 1959-08-04 1960-08-02 Procédé de préparation de mono-cristal dendritique

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US83150959A 1959-08-04 1959-08-04
FR834774A FR1264317A (fr) 1959-08-04 1960-08-02 Procédé de préparation de mono-cristal dendritique

Publications (1)

Publication Number Publication Date
FR1264317A true FR1264317A (fr) 1961-06-19

Family

ID=26187000

Family Applications (1)

Application Number Title Priority Date Filing Date
FR834774A Expired FR1264317A (fr) 1959-08-04 1960-08-02 Procédé de préparation de mono-cristal dendritique

Country Status (1)

Country Link
FR (1) FR1264317A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1222903B (de) * 1961-05-12 1966-08-18 Texas Instruments Inc Verfahren zur Herstellung von Silicium-dendriten und Vorrichtung zur Durchfuehrung des Verfahrens

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1222903B (de) * 1961-05-12 1966-08-18 Texas Instruments Inc Verfahren zur Herstellung von Silicium-dendriten und Vorrichtung zur Durchfuehrung des Verfahrens

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