FR1225692A - Method of manufacturing a semiconductor electrode system, in particular a transistron - Google Patents

Method of manufacturing a semiconductor electrode system, in particular a transistron

Info

Publication number
FR1225692A
FR1225692A FR784224A FR784224A FR1225692A FR 1225692 A FR1225692 A FR 1225692A FR 784224 A FR784224 A FR 784224A FR 784224 A FR784224 A FR 784224A FR 1225692 A FR1225692 A FR 1225692A
Authority
FR
France
Prior art keywords
transistron
manufacturing
electrode system
semiconductor electrode
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR784224A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of FR1225692A publication Critical patent/FR1225692A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/10—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing sonic or ultrasonic vibrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Health & Medical Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
FR784224A 1958-01-16 1959-01-16 Method of manufacturing a semiconductor electrode system, in particular a transistron Expired FR1225692A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1561/58A GB911292A (en) 1958-01-16 1958-01-16 Improvements in and relating to semi-conductor devices

Publications (1)

Publication Number Publication Date
FR1225692A true FR1225692A (en) 1960-07-04

Family

ID=9724105

Family Applications (1)

Application Number Title Priority Date Filing Date
FR784224A Expired FR1225692A (en) 1958-01-16 1959-01-16 Method of manufacturing a semiconductor electrode system, in particular a transistron

Country Status (7)

Country Link
US (1) US3069297A (en)
BE (1) BE574814A (en)
CH (1) CH370165A (en)
DE (1) DE1090770B (en)
FR (1) FR1225692A (en)
GB (1) GB911292A (en)
NL (2) NL235051A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1194061B (en) * 1959-06-23 1965-06-03 Ibm Method of manufacturing a flat four-zone transistor and application of a transistor manufactured by this method

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3276925A (en) * 1959-12-12 1966-10-04 Nippon Electric Co Method of producing tunnel diodes by double alloying
NL121714C (en) * 1959-12-14
NL287617A (en) * 1962-01-12
US3243325A (en) * 1962-06-09 1966-03-29 Fujitsu Ltd Method of producing a variable-capacitance germanium diode and product produced thereby
GB1074283A (en) * 1963-01-09 1967-07-05 Mullard Ltd Improvements in and relating to semiconductor devices
DE1232269B (en) * 1963-08-23 1967-01-12 Telefunken Patent Diffusion process for manufacturing a semiconductor component with emitter, base and collector zones
DE1215754B (en) * 1964-02-24 1966-05-05 Danfoss As Electronic switch
DE1614861C3 (en) * 1967-09-01 1982-03-11 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Process for the manufacture of a junction field effect transistor
US3955270A (en) * 1973-08-31 1976-05-11 Bell Telephone Laboratories, Incorporated Methods for making semiconductor devices
US3905162A (en) * 1974-07-23 1975-09-16 Silicon Material Inc Method of preparing high yield semiconductor wafer

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2865082A (en) * 1953-07-16 1958-12-23 Sylvania Electric Prod Semiconductor mount and method
BE533946A (en) * 1953-12-09
NL207969A (en) * 1955-06-28
DE1073111B (en) * 1954-12-02 1960-01-14 Siemens Schuckertwerke Aktiengesellschaft Berlin und Erlangen Method for producing a flat transistor with a surface layer of increased concentration of impurities at the free points between the electrodes on a single-crystal semiconductor body
BE558436A (en) * 1956-06-18

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1194061B (en) * 1959-06-23 1965-06-03 Ibm Method of manufacturing a flat four-zone transistor and application of a transistor manufactured by this method

Also Published As

Publication number Publication date
US3069297A (en) 1962-12-18
GB911292A (en) 1962-11-21
CH370165A (en) 1963-06-30
NL121250C (en)
BE574814A (en)
NL235051A (en)
DE1090770B (en) 1960-10-13

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