FR1173361A - Transistors à impulsions - Google Patents

Transistors à impulsions

Info

Publication number
FR1173361A
FR1173361A FR1173361DA FR1173361A FR 1173361 A FR1173361 A FR 1173361A FR 1173361D A FR1173361D A FR 1173361DA FR 1173361 A FR1173361 A FR 1173361A
Authority
FR
France
Prior art keywords
pulse transistors
transistors
pulse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of FR1173361A publication Critical patent/FR1173361A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K23/00—Pulse counters comprising counting chains; Frequency dividers comprising counting chains
    • H03K23/002—Pulse counters comprising counting chains; Frequency dividers comprising counting chains using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/35—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/676—Combinations of only thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Electronic Switches (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR1173361D 1956-04-18 1957-03-26 Transistors à impulsions Expired FR1173361A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US579006A US2856544A (en) 1956-04-18 1956-04-18 Semiconductive pulse translator

Publications (1)

Publication Number Publication Date
FR1173361A true FR1173361A (fr) 1959-02-24

Family

ID=24315204

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1173361D Expired FR1173361A (fr) 1956-04-18 1957-03-26 Transistors à impulsions

Country Status (6)

Country Link
US (1) US2856544A (OSRAM)
JP (1) JPS353672B1 (OSRAM)
BE (1) BE556305A (OSRAM)
DE (1) DE1035789B (OSRAM)
FR (1) FR1173361A (OSRAM)
GB (1) GB845120A (OSRAM)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2967952A (en) * 1956-04-25 1961-01-10 Shockley William Semiconductor shift register
US3038085A (en) * 1958-03-25 1962-06-05 Rca Corp Shift-register utilizing unitary multielectrode semiconductor device
GB945742A (OSRAM) * 1959-02-06 Texas Instruments Inc
US3115581A (en) * 1959-05-06 1963-12-24 Texas Instruments Inc Miniature semiconductor integrated circuit
DE1207013B (de) * 1959-05-06 1965-12-16 Texas Instruments Inc Mikrominiaturisierte integrierte Halbleiter-schaltungsanordnung und Verfahren zu deren Herstellung
US3040195A (en) * 1959-07-02 1962-06-19 Gen Precision Inc Bistable multivibrator employing pnpn switching diodes
US3040196A (en) * 1959-07-22 1962-06-19 Bell Telephone Labor Inc Semiconductor pulse translating system
FR1281944A (fr) * 1959-11-10 1962-01-19 Westinghouse Electric Corp Dispositif à semi-conducteur à plusieurs bornes
US3201596A (en) * 1959-12-17 1965-08-17 Westinghouse Electric Corp Sequential trip semiconductor device
USRE25389E (en) * 1960-03-01 1963-05-28 harrixk
DE1196794C2 (de) * 1960-03-26 1966-04-07 Telefunken Patent Halbleiterbauelement mit einem scheiben-foermigen Halbleiterkoerper, insbesondere Transistor, und Verfahren zum Herstellen
NL257531A (OSRAM) * 1960-03-30
US3010029A (en) * 1960-05-16 1961-11-21 Bell Telephone Labor Inc Semiconductive scanning device
US3160873A (en) * 1960-10-24 1964-12-08 Rca Corp Negative resistance analog to digital converter
US3209169A (en) * 1961-09-27 1965-09-28 Mizutani Hiroshi Magnetic field type step diode
DE1190365B (de) * 1963-01-24 1965-04-01 Kernforschung Gmbh Ges Fuer Einrichtung zum vorbestimmten aufeinanderfolgenden von einer Kristallodenanordnung gesteuerten Abfragen
US3303431A (en) * 1964-02-10 1967-02-07 Ibm Coupled semiconductor injection laser devices
EP0917212B1 (en) * 1988-03-18 2002-12-11 Nippon Sheet Glass Co., Ltd. Self-scanning light-emitting element array
EP0410695B1 (en) * 1989-07-25 2001-10-24 Nippon Sheet Glass Co., Ltd. Light-emitting device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB654909A (en) * 1948-10-27 1951-07-04 Standard Telephones Cables Ltd Improvements in or relating to electric delay devices employing semi-conductors
BE514780A (OSRAM) * 1951-10-12
DE1048359B (OSRAM) * 1952-07-22
BE525428A (OSRAM) * 1952-12-30

Also Published As

Publication number Publication date
DE1035789B (de) 1958-08-07
BE556305A (OSRAM)
US2856544A (en) 1958-10-14
GB845120A (en) 1960-08-17
JPS353672B1 (OSRAM) 1960-04-15

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