FR1137384A - Procédé de fabrication de matière semi-conductrice - Google Patents

Procédé de fabrication de matière semi-conductrice

Info

Publication number
FR1137384A
FR1137384A FR1137384DA FR1137384A FR 1137384 A FR1137384 A FR 1137384A FR 1137384D A FR1137384D A FR 1137384DA FR 1137384 A FR1137384 A FR 1137384A
Authority
FR
France
Prior art keywords
manufacturing process
semiconductor material
material manufacturing
semiconductor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canadian Patents and Development Ltd
Original Assignee
Canadian Patents and Development Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canadian Patents and Development Ltd filed Critical Canadian Patents and Development Ltd
Application granted granted Critical
Publication of FR1137384A publication Critical patent/FR1137384A/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR1137384D 1954-06-30 1955-06-29 Procédé de fabrication de matière semi-conductrice Expired FR1137384A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1137384XA 1954-06-30 1954-06-30

Publications (1)

Publication Number Publication Date
FR1137384A true FR1137384A (fr) 1957-05-28

Family

ID=22351191

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1137384D Expired FR1137384A (fr) 1954-06-30 1955-06-29 Procédé de fabrication de matière semi-conductrice

Country Status (2)

Country Link
DE (1) DE1038653B (fr)
FR (1) FR1137384A (fr)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE894293C (de) * 1951-06-29 1953-10-22 Western Electric Co Verfahren zur Herstellung eines Kristalls aus Halbleitermaterial

Also Published As

Publication number Publication date
DE1038653B (de) 1958-09-11

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