FR1135470A - Perfectionnements aux redresseurs à semi-conducteur - Google Patents

Perfectionnements aux redresseurs à semi-conducteur

Info

Publication number
FR1135470A
FR1135470A FR1135470DA FR1135470A FR 1135470 A FR1135470 A FR 1135470A FR 1135470D A FR1135470D A FR 1135470DA FR 1135470 A FR1135470 A FR 1135470A
Authority
FR
France
Prior art keywords
semiconductor rectifiers
rectifiers
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Compagnie Francaise Thomson Houston SA
Original Assignee
Compagnie Francaise Thomson Houston SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Francaise Thomson Houston SA filed Critical Compagnie Francaise Thomson Houston SA
Application granted granted Critical
Publication of FR1135470A publication Critical patent/FR1135470A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02PCONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
    • H02P9/00Arrangements for controlling electric generators for the purpose of obtaining a desired output
    • H02P9/14Arrangements for controlling electric generators for the purpose of obtaining a desired output by variation of field
    • H02P9/26Arrangements for controlling electric generators for the purpose of obtaining a desired output by variation of field using discharge tubes or semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Rectifiers (AREA)
  • Electrodes Of Semiconductors (AREA)
FR1135470D 1954-08-27 1955-08-26 Perfectionnements aux redresseurs à semi-conducteur Expired FR1135470A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US452652A US2814735A (en) 1954-08-27 1954-08-27 Semiconductor device

Publications (1)

Publication Number Publication Date
FR1135470A true FR1135470A (fr) 1957-04-29

Family

ID=23797336

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1135470D Expired FR1135470A (fr) 1954-08-27 1955-08-26 Perfectionnements aux redresseurs à semi-conducteur

Country Status (4)

Country Link
US (1) US2814735A (fr)
FR (1) FR1135470A (fr)
GB (1) GB816476A (fr)
NL (1) NL199921A (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1068301B (fr) * 1955-11-12 1959-11-05
US3129338A (en) * 1957-01-30 1964-04-14 Rauland Corp Uni-junction coaxial transistor and circuitry therefor
FR1223418A (fr) * 1959-01-07 1960-06-16 Dispositifs à semi-conducteur à deux bornes à résistance différentielle négative
US3089037A (en) * 1959-03-17 1963-05-07 Hoffman Electronics Corp Variable delay pulse stretcher using adjustable bias

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2524033A (en) * 1948-02-26 1950-10-03 Bell Telephone Labor Inc Three-electrode circuit element utilizing semiconductive materials
US2666814A (en) * 1949-04-27 1954-01-19 Bell Telephone Labor Inc Semiconductor translating device
NL82014C (fr) * 1949-11-30
US2561411A (en) * 1950-03-08 1951-07-24 Bell Telephone Labor Inc Semiconductor signal translating device
US2736822A (en) * 1952-05-09 1956-02-28 Gen Electric Hall effect apparatus
BE520777A (fr) * 1952-06-19
US2769926A (en) * 1953-03-09 1956-11-06 Gen Electric Non-linear resistance device

Also Published As

Publication number Publication date
GB816476A (en) 1959-07-15
US2814735A (en) 1957-11-26
NL199921A (fr)

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