FR1108124A - Transistors à multiplication de courant, et méthode de fabrication de ces derniers - Google Patents
Transistors à multiplication de courant, et méthode de fabrication de ces derniersInfo
- Publication number
- FR1108124A FR1108124A FR1108124DA FR1108124A FR 1108124 A FR1108124 A FR 1108124A FR 1108124D A FR1108124D A FR 1108124DA FR 1108124 A FR1108124 A FR 1108124A
- Authority
- FR
- France
- Prior art keywords
- manufacture
- current multiplying
- transistors
- multiplying transistors
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors
- H10F30/245—Bipolar phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/50—Alloying conductive materials with semiconductor bodies
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US1108124XA | 1953-05-14 | 1953-05-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR1108124A true FR1108124A (fr) | 1956-01-09 |
Family
ID=22335073
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR1108124D Expired FR1108124A (fr) | 1953-05-14 | 1954-05-04 | Transistors à multiplication de courant, et méthode de fabrication de ces derniers |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE1033333B (enExample) |
| FR (1) | FR1108124A (enExample) |
| NL (2) | NL97560C (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2998534A (en) * | 1958-09-04 | 1961-08-29 | Clevite Corp | Symmetrical junction transistor device and circuit |
| US3051840A (en) * | 1959-12-18 | 1962-08-28 | Ibm | Photosensitive field effect unit |
| US3196284A (en) * | 1961-04-21 | 1965-07-20 | Ibm | Logical signal processing apparatus |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL152201C (enExample) * | 1949-03-31 | |||
| GB681810A (en) * | 1949-04-01 | 1952-10-29 | Standard Telephones Cables Ltd | Improvements in or relating to crystal triodes |
| BE558880A (enExample) * | 1949-04-01 | |||
| NL160604B (nl) * | 1950-04-21 | 1900-01-01 | Snam Progetti | Werkwijze ter bereiding van een tegen hoge belastingen bestand smeervet. |
| US2629802A (en) * | 1951-12-07 | 1953-02-24 | Rca Corp | Photocell amplifier construction |
-
0
- NL NL187425D patent/NL187425A/xx unknown
- NL NL97560D patent/NL97560C/xx active
-
1954
- 1954-05-04 FR FR1108124D patent/FR1108124A/fr not_active Expired
- 1954-05-13 DE DEI8651A patent/DE1033333B/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| NL97560C (enExample) | |
| DE1033333B (de) | 1958-07-03 |
| NL187425A (enExample) |
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