FR1106990A - Dispositifs semi-conducteurs en silicium, et procédés de fabrication de ceux-ci - Google Patents

Dispositifs semi-conducteurs en silicium, et procédés de fabrication de ceux-ci

Info

Publication number
FR1106990A
FR1106990A FR1106990DA FR1106990A FR 1106990 A FR1106990 A FR 1106990A FR 1106990D A FR1106990D A FR 1106990DA FR 1106990 A FR1106990 A FR 1106990A
Authority
FR
France
Prior art keywords
methods
semiconductor devices
silicon semiconductor
making same
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Application granted granted Critical
Publication of FR1106990A publication Critical patent/FR1106990A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S228/00—Metal fusion bonding
    • Y10S228/903—Metal to nonmetal

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Fuses (AREA)
FR1106990D 1953-11-02 1954-08-31 Dispositifs semi-conducteurs en silicium, et procédés de fabrication de ceux-ci Expired FR1106990A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US389514A US2807561A (en) 1953-11-02 1953-11-02 Process of fusing materials to silicon

Publications (1)

Publication Number Publication Date
FR1106990A true FR1106990A (fr) 1955-12-27

Family

ID=23538570

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1106990D Expired FR1106990A (fr) 1953-11-02 1954-08-31 Dispositifs semi-conducteurs en silicium, et procédés de fabrication de ceux-ci

Country Status (5)

Country Link
US (1) US2807561A (fr)
BE (1) BE533003A (fr)
FR (1) FR1106990A (fr)
GB (1) GB760649A (fr)
NL (2) NL192008A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1080697B (de) * 1957-08-07 1960-04-28 Western Electric Co Verfahren zur Herstellung von Halbleiterkoerpern einer Halbleiteranordnung

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2897587A (en) * 1955-05-23 1959-08-04 Philco Corp Method of fabricating semiconductor devices
NL199100A (fr) * 1955-07-21
US2996800A (en) * 1956-11-28 1961-08-22 Texas Instruments Inc Method of making ohmic connections to silicon semiconductors
NL113470C (fr) * 1957-06-25
NL241323A (fr) * 1958-07-17 1900-01-01
US3119171A (en) * 1958-07-23 1964-01-28 Texas Instruments Inc Method of making low resistance electrical contacts on graphite
US3091849A (en) * 1959-09-14 1963-06-04 Pacific Semiconductors Inc Method of bonding materials
US3151008A (en) * 1960-09-23 1964-09-29 Sprague Electric Co Method of forming a p-nu junction
NL269600A (fr) * 1960-09-27 1900-01-01
US3192081A (en) * 1961-07-20 1965-06-29 Raytheon Co Method of fusing material and the like
US3138495A (en) * 1961-07-28 1964-06-23 Texas Instruments Inc Semiconductor device and method of manufacture
US3242061A (en) * 1962-03-07 1966-03-22 Micro State Electronics Corp Method of making a tunnel diode assembly
US3175286A (en) * 1963-10-04 1965-03-30 Coast Metals Inc Method of treating metal powders for brazing purposes
US3175285A (en) * 1963-10-04 1965-03-30 Coast Metals Inc Method of treating metal powders for brazing purposes

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2194200A (en) * 1938-12-13 1940-03-19 Western Pipe & Steel Company O Electrical welding flux and method
NL34436C (fr) * 1945-04-20

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1080697B (de) * 1957-08-07 1960-04-28 Western Electric Co Verfahren zur Herstellung von Halbleiterkoerpern einer Halbleiteranordnung

Also Published As

Publication number Publication date
NL89732C (fr)
NL192008A (fr)
US2807561A (en) 1957-09-24
GB760649A (en) 1956-11-07
BE533003A (fr)

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