FR1029684A - Procédé pour la production de cristaux, notamment de germanium - Google Patents
Procédé pour la production de cristaux, notamment de germaniumInfo
- Publication number
- FR1029684A FR1029684A FR1029684DA FR1029684A FR 1029684 A FR1029684 A FR 1029684A FR 1029684D A FR1029684D A FR 1029684DA FR 1029684 A FR1029684 A FR 1029684A
- Authority
- FR
- France
- Prior art keywords
- crystals
- production
- particular germanium
- germanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title 1
- 229910052732 germanium Inorganic materials 0.000 title 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US138354A US2683676A (en) | 1950-01-13 | 1950-01-13 | Production of germanium rods having longitudinal crystal boundaries |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR1029684A true FR1029684A (fr) | 1953-06-04 |
Family
ID=22481651
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR1029684D Expired FR1029684A (fr) | 1950-01-13 | 1950-12-05 | Procédé pour la production de cristaux, notamment de germanium |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US2683676A (enEXAMPLES) |
| BE (1) | BE500569A (enEXAMPLES) |
| FR (1) | FR1029684A (enEXAMPLES) |
| GB (1) | GB706849A (enEXAMPLES) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2835614A (en) * | 1955-11-30 | 1958-05-20 | Raulaud Corp | Method of manufacturing crystalline material |
| EP0172621A3 (en) * | 1984-07-20 | 1988-03-16 | Sumitomo Electric Industries Limited | Method for growing a single crystal of compound semiconductor |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2768914A (en) * | 1951-06-29 | 1956-10-30 | Bell Telephone Labor Inc | Process for producing semiconductive crystals of uniform resistivity |
| US2841860A (en) * | 1952-08-08 | 1958-07-08 | Sylvania Electric Prod | Semiconductor devices and methods |
| DE1061527B (de) * | 1953-02-14 | 1959-07-16 | Siemens Ag | Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken |
| US2854363A (en) * | 1953-04-02 | 1958-09-30 | Int Standard Electric Corp | Method of producing semiconductor crystals containing p-n junctions |
| US2893847A (en) * | 1954-02-23 | 1959-07-07 | Siemens Ag | Apparatus for preparing rod-shaped, crystalline bodies, particularly semiconductor bodies |
| US2793103A (en) * | 1954-02-24 | 1957-05-21 | Siemens Ag | Method for producing rod-shaped bodies of crystalline material |
| DE1044768B (de) * | 1954-03-02 | 1958-11-27 | Siemens Ag | Verfahren und Vorrichtung zum Ziehen eines stabfoermigen kristallinen Koerpers, vorzugsweise Halbleiterkoerpers |
| US2809136A (en) * | 1954-03-10 | 1957-10-08 | Sylvania Electric Prod | Apparatus and method of preparing crystals of silicon germanium group |
| BE536985A (enEXAMPLES) * | 1954-04-01 | |||
| US2842467A (en) * | 1954-04-28 | 1958-07-08 | Ibm | Method of growing semi-conductors |
| US2859141A (en) * | 1954-04-30 | 1958-11-04 | Raytheon Mfg Co | Method for making a semiconductor junction |
| NL130620C (enEXAMPLES) * | 1954-05-18 | 1900-01-01 | ||
| BE542056A (enEXAMPLES) * | 1954-10-15 | |||
| BE542375A (enEXAMPLES) * | 1954-10-28 | |||
| US2935385A (en) * | 1955-03-25 | 1960-05-03 | Texas Instruments Inc | Apparatus for manufacturing semiconductor materials |
| US2839436A (en) * | 1955-04-19 | 1958-06-17 | Texas Instruments Inc | Method and apparatus for growing semiconductor crystals |
| US2871149A (en) * | 1955-05-02 | 1959-01-27 | Sprague Electric Co | Semiconductor method |
| NL210216A (enEXAMPLES) * | 1955-12-02 | |||
| US2900708A (en) * | 1956-02-16 | 1959-08-25 | Marvalaud Inc | Apparatus for producing alloy and bimetallic filaments |
| US2889240A (en) * | 1956-03-01 | 1959-06-02 | Rca Corp | Method and apparatus for growing semi-conductive single crystals from a melt |
| DE1262472B (de) * | 1956-07-12 | 1968-03-07 | Siemens Ag | Verfahren zur Waermebehandlung von hochreinem Halbleitermaterial durch in dem Halbleiter fliessenden Strom |
| US2975036A (en) * | 1956-10-05 | 1961-03-14 | Motorola Inc | Crystal pulling apparatus |
| US2927008A (en) * | 1956-10-29 | 1960-03-01 | Shockley Transistor Corp | Crystal growing apparatus |
| US2988433A (en) * | 1957-12-31 | 1961-06-13 | Ibm | Method of forming crystals |
| NL269311A (enEXAMPLES) * | 1960-09-20 | |||
| DE1242578B (de) * | 1960-09-29 | 1967-06-22 | Siemens Ag | Vorrichtung zum Herstellen von bandfoermigen, dendritisch gewachsenen, hochreinen Halbleiterkristallen |
| US3147085A (en) * | 1961-09-14 | 1964-09-01 | Gen Electric | Apparatus for growing whiskers |
| BE624959A (enEXAMPLES) * | 1961-11-20 | |||
| NL128651C (enEXAMPLES) * | 1966-01-26 | |||
| US3485289A (en) * | 1966-02-01 | 1969-12-23 | Mitsubishi Chem Ind | Method for the manufacture of aluminum or aluminum alloy castings |
| US3494804A (en) * | 1968-07-15 | 1970-02-10 | Air Reduction | Method for growing crystals |
| US3822111A (en) * | 1971-02-25 | 1974-07-02 | Sony Corp | Apparatus for pulling up semiconductor crystals |
| GB1475261A (en) * | 1975-04-02 | 1977-06-01 | Nat Res Dev | Siliceous materials |
| US4548879A (en) * | 1984-05-21 | 1985-10-22 | Rohm And Haas Company | Solderable polymer thick films |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1531784A (en) * | 1921-12-13 | 1925-03-31 | Cleveland Trust Co | Sheet metal |
| US1738307A (en) * | 1927-04-11 | 1929-12-03 | Bell Telephone Labor Inc | Metallic element |
| US1921934A (en) * | 1929-12-02 | 1933-08-08 | Blair Strip Steel Company | Art of annealing |
| US2188771A (en) * | 1934-01-26 | 1940-01-30 | Firestone Tire & Rubber Co | Electrode |
| US2091903A (en) * | 1935-11-04 | 1937-08-31 | Hughes Tool Co | Method of treating tungsten carbide |
| FR957542A (enEXAMPLES) * | 1941-04-04 | 1950-02-23 |
-
0
- BE BE500569D patent/BE500569A/xx unknown
-
1950
- 1950-01-13 US US138354A patent/US2683676A/en not_active Expired - Lifetime
- 1950-12-05 FR FR1029684D patent/FR1029684A/fr not_active Expired
-
1951
- 1951-01-12 GB GB919/51A patent/GB706849A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2835614A (en) * | 1955-11-30 | 1958-05-20 | Raulaud Corp | Method of manufacturing crystalline material |
| EP0172621A3 (en) * | 1984-07-20 | 1988-03-16 | Sumitomo Electric Industries Limited | Method for growing a single crystal of compound semiconductor |
Also Published As
| Publication number | Publication date |
|---|---|
| GB706849A (en) | 1954-04-07 |
| US2683676A (en) | 1954-07-13 |
| BE500569A (enEXAMPLES) |
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