FI971753A - Piitä sisältävä eristyslaite, jolla on kelluva kollektori - Google Patents
Piitä sisältävä eristyslaite, jolla on kelluva kollektori Download PDFInfo
- Publication number
- FI971753A FI971753A FI971753A FI971753A FI971753A FI 971753 A FI971753 A FI 971753A FI 971753 A FI971753 A FI 971753A FI 971753 A FI971753 A FI 971753A FI 971753 A FI971753 A FI 971753A
- Authority
- FI
- Finland
- Prior art keywords
- silicon
- insulation device
- containing insulation
- floating collector
- collector
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 238000009413 insulation Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7317—Bipolar thin film transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9403722A SE513512C2 (sv) | 1994-10-31 | 1994-10-31 | Halvledaranordning med ett flytande kollektorområde |
| PCT/SE1995/001284 WO1996013862A1 (en) | 1994-10-31 | 1995-10-31 | Silicon-on-insulator device with floating collector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FI971753A0 FI971753A0 (fi) | 1997-04-24 |
| FI971753A true FI971753A (fi) | 1997-04-24 |
Family
ID=20395797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FI971753A FI971753A (fi) | 1994-10-31 | 1997-04-24 | Piitä sisältävä eristyslaite, jolla on kelluva kollektori |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US5939759A (fi) |
| EP (1) | EP0789933A2 (fi) |
| JP (1) | JPH10508155A (fi) |
| CN (1) | CN1088261C (fi) |
| AU (1) | AU3857595A (fi) |
| CA (1) | CA2204136A1 (fi) |
| FI (1) | FI971753A (fi) |
| SE (1) | SE513512C2 (fi) |
| WO (1) | WO1996013862A1 (fi) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1142026B1 (de) * | 1998-12-04 | 2007-11-14 | Infineon Technologies AG | Leistungshalbleiterschalter |
| US7760103B2 (en) * | 2001-10-26 | 2010-07-20 | Innovative American Technology, Inc. | Multi-stage system for verification of container contents |
| US8350352B2 (en) * | 2009-11-02 | 2013-01-08 | Analog Devices, Inc. | Bipolar transistor |
| US9099489B2 (en) * | 2012-07-10 | 2015-08-04 | Freescale Semiconductor Inc. | Bipolar transistor with high breakdown voltage |
| CN108155226A (zh) * | 2017-12-22 | 2018-06-12 | 杭州士兰微电子股份有限公司 | Npn型三极管及其制造方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3995307A (en) * | 1973-12-28 | 1976-11-30 | International Business Machines Corporation | Integrated monolithic switch for high voltage applications |
| DE3029553A1 (de) * | 1980-08-04 | 1982-03-11 | Siemens AG, 1000 Berlin und 8000 München | Transistoranordnung mit hoher kollektor-emitter-durchbruchsspannung |
| JPS59161867A (ja) * | 1983-03-07 | 1984-09-12 | Hitachi Ltd | 半導体装置 |
| JPS6213071A (ja) * | 1985-07-10 | 1987-01-21 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| US4861731A (en) * | 1988-02-02 | 1989-08-29 | General Motors Corporation | Method of fabricating a lateral dual gate thyristor |
| JPH0382041A (ja) * | 1989-08-24 | 1991-04-08 | Fujitsu Ltd | 半導体集積回路の製造方法 |
| EP0462270B1 (en) * | 1990-01-08 | 2000-08-30 | Harris Corporation | Method of using a semiconductor device comprising a substrate having a dielectrically isolated semiconductor island |
| US5621239A (en) * | 1990-11-05 | 1997-04-15 | Fujitsu Limited | SOI device having a buried layer of reduced resistivity |
| JP2746499B2 (ja) * | 1992-05-15 | 1998-05-06 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
| FR2694449B1 (fr) * | 1992-07-09 | 1994-10-28 | France Telecom | Composant électronique multifonctions, notamment élément à résistance dynamique négative, et procédé de fabrication correspondant. |
| SE500814C2 (sv) * | 1993-01-25 | 1994-09-12 | Ericsson Telefon Ab L M | Halvledaranordning i ett tunt aktivt skikt med hög genombrottsspänning |
| JP3232168B2 (ja) * | 1993-07-02 | 2001-11-26 | 三菱電機株式会社 | 半導体基板およびその製造方法ならびにその半導体基板を用いた半導体装置 |
-
1994
- 1994-10-31 SE SE9403722A patent/SE513512C2/sv not_active IP Right Cessation
-
1995
- 1995-10-31 EP EP95936829A patent/EP0789933A2/en not_active Withdrawn
- 1995-10-31 US US08/836,426 patent/US5939759A/en not_active Expired - Lifetime
- 1995-10-31 JP JP8514502A patent/JPH10508155A/ja active Pending
- 1995-10-31 WO PCT/SE1995/001284 patent/WO1996013862A1/en not_active Application Discontinuation
- 1995-10-31 CA CA002204136A patent/CA2204136A1/en not_active Abandoned
- 1995-10-31 AU AU38575/95A patent/AU3857595A/en not_active Abandoned
- 1995-10-31 CN CN95195973A patent/CN1088261C/zh not_active Expired - Lifetime
-
1997
- 1997-04-24 FI FI971753A patent/FI971753A/fi unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO1996013862A1 (en) | 1996-05-09 |
| CN1165585A (zh) | 1997-11-19 |
| AU3857595A (en) | 1996-05-23 |
| SE513512C2 (sv) | 2000-09-25 |
| SE9403722D0 (sv) | 1994-10-31 |
| CA2204136A1 (en) | 1996-05-09 |
| EP0789933A2 (en) | 1997-08-20 |
| FI971753A0 (fi) | 1997-04-24 |
| SE9403722L (sv) | 1996-05-01 |
| JPH10508155A (ja) | 1998-08-04 |
| US5939759A (en) | 1999-08-17 |
| CN1088261C (zh) | 2002-07-24 |
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