FI946015A - Electroless-kontaktinystynmuodostusmenetelmä - Google Patents

Electroless-kontaktinystynmuodostusmenetelmä Download PDF

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Publication number
FI946015A
FI946015A FI946015A FI946015A FI946015A FI 946015 A FI946015 A FI 946015A FI 946015 A FI946015 A FI 946015A FI 946015 A FI946015 A FI 946015A FI 946015 A FI946015 A FI 946015A
Authority
FI
Finland
Prior art keywords
contact pins
training contact
electroless
procedure
electroless procedure
Prior art date
Application number
FI946015A
Other languages
English (en)
Swedish (sv)
Other versions
FI946015A0 (fi
Inventor
Ahti Aintila
Original Assignee
Picopak Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FI943276A external-priority patent/FI943276A0/fi
Application filed by Picopak Oy filed Critical Picopak Oy
Priority to FI946015A priority Critical patent/FI946015A/fi
Publication of FI946015A0 publication Critical patent/FI946015A0/fi
Priority to PCT/FI1995/000392 priority patent/WO1996002122A1/en
Publication of FI946015A publication Critical patent/FI946015A/fi

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/11Manufacturing methods
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/03Manufacturing methods
    • H01L2224/039Methods of manufacturing bonding areas involving a specific sequence of method steps
    • H01L2224/03912Methods of manufacturing bonding areas involving a specific sequence of method steps the bump being used as a mask for patterning the bonding area
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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    • H01L2224/02Bonding areas; Manufacturing methods related thereto
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    • H01L2224/05001Internal layers
    • H01L2224/05099Material
    • H01L2224/051Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05124Aluminium [Al] as principal constituent
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    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624Aluminium [Al] as principal constituent
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    • H01L2224/10Bump connectors; Manufacturing methods related thereto
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    • H01L2224/1147Manufacturing methods using a lift-off mask
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    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
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    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2924/01046Palladium [Pd]
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    • H01L2924/01074Tungsten [W]
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    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
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    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/30105Capacitance

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemically Coating (AREA)
FI946015A 1994-07-08 1994-12-21 Electroless-kontaktinystynmuodostusmenetelmä FI946015A (fi)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FI946015A FI946015A (fi) 1994-07-08 1994-12-21 Electroless-kontaktinystynmuodostusmenetelmä
PCT/FI1995/000392 WO1996002122A1 (en) 1994-07-08 1995-07-06 Electroless method of forming contact bumps

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI943276A FI943276A0 (fi) 1994-07-08 1994-07-08 Elektroless-foerfarande foer bildning av kontaktstudsar
FI946015A FI946015A (fi) 1994-07-08 1994-12-21 Electroless-kontaktinystynmuodostusmenetelmä

Publications (2)

Publication Number Publication Date
FI946015A0 FI946015A0 (fi) 1994-12-21
FI946015A true FI946015A (fi) 1996-01-09

Family

ID=26159774

Family Applications (1)

Application Number Title Priority Date Filing Date
FI946015A FI946015A (fi) 1994-07-08 1994-12-21 Electroless-kontaktinystynmuodostusmenetelmä

Country Status (2)

Country Link
FI (1) FI946015A (fi)
WO (1) WO1996002122A1 (fi)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI954922A (fi) * 1995-10-16 1997-04-17 Picopak Oy Valmistusmenetelmä sekä kontaktinystyrakenne puolijohdepalojen tiheitä pintaliitoksia varten
US5989993A (en) * 1996-02-09 1999-11-23 Elke Zakel Method for galvanic forming of bonding pads
DE19616373A1 (de) * 1996-04-24 1997-08-14 Fraunhofer Ges Forschung Herstellung galvanisch abgeformter Kontakthöcker
DE102004019445A1 (de) * 2004-04-19 2005-11-03 Siemens Ag Mit planarer Verbindungstechnik auf einem insbesondere elektrischleitendem Substrat aufgebaute Schaltung
DE102004047730B4 (de) 2004-09-30 2017-06-22 Advanced Micro Devices, Inc. Ein Verfahren zum Dünnen von Halbleitersubstraten zur Herstellung von dünnen Halbleiterplättchen

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4182781A (en) * 1977-09-21 1980-01-08 Texas Instruments Incorporated Low cost method for forming elevated metal bumps on integrated circuit bodies employing an aluminum/palladium metallization base for electroless plating
US5226232A (en) * 1990-05-18 1993-07-13 Hewlett-Packard Company Method for forming a conductive pattern on an integrated circuit

Also Published As

Publication number Publication date
FI946015A0 (fi) 1994-12-21
WO1996002122A1 (en) 1996-01-25

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