FI932295A - Foerfarande foer tillverkning av ett al-haltigt skikt med plan yta pao ett substrat vars yta har haolstrukturer med ett stort sidfoerhaollande - Google Patents
Foerfarande foer tillverkning av ett al-haltigt skikt med plan yta pao ett substrat vars yta har haolstrukturer med ett stort sidfoerhaollande Download PDFInfo
- Publication number
- FI932295A FI932295A FI932295A FI932295A FI932295A FI 932295 A FI932295 A FI 932295A FI 932295 A FI932295 A FI 932295A FI 932295 A FI932295 A FI 932295A FI 932295 A FI932295 A FI 932295A
- Authority
- FI
- Finland
- Prior art keywords
- ett
- yta
- med
- sidfoerhaollande
- haolstrukturer
- Prior art date
Links
- 238000000034 method Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 238000004544 sputter deposition Methods 0.000 abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000002378 acidificating effect Effects 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 abstract 1
- 239000003792 electrolyte Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Nitrogen Condensed Heterocyclic Rings (AREA)
- Ultra Sonic Daignosis Equipment (AREA)
- Electrodes Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Processes Specially Adapted For Manufacturing Cables (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE4216715 | 1992-05-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FI932295A0 FI932295A0 (fi) | 1993-05-19 |
| FI932295A true FI932295A (fi) | 1993-11-21 |
Family
ID=6459350
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FI932295A FI932295A (fi) | 1992-05-20 | 1993-05-19 | Foerfarande foer tillverkning av ett al-haltigt skikt med plan yta pao ett substrat vars yta har haolstrukturer med ett stort sidfoerhaollande |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6033534A (fi) |
| EP (1) | EP0574687B1 (fi) |
| JP (1) | JP3305811B2 (fi) |
| AT (1) | ATE164968T1 (fi) |
| BR (1) | BR9301928A (fi) |
| DE (1) | DE59308367D1 (fi) |
| ES (1) | ES2115692T3 (fi) |
| FI (1) | FI932295A (fi) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2510272B2 (ja) * | 1989-01-19 | 1996-06-26 | 積水化学工業株式会社 | 透水性人工芝生の製造方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3029792A1 (de) * | 1980-08-06 | 1982-03-11 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum zerteilen eines halbleiterkristalls in scheiben |
| US4756810A (en) * | 1986-12-04 | 1988-07-12 | Machine Technology, Inc. | Deposition and planarizing methods and apparatus |
| JPS63219819A (ja) * | 1987-03-06 | 1988-09-13 | Fuji Heavy Ind Ltd | 過給機付内燃機関の過給圧制御装置 |
| EP0296348B1 (de) * | 1987-05-27 | 1993-03-31 | Siemens Aktiengesellschaft | Ätzverfahren zum Erzeugen von Lochöffnungen oder Gräben in n-dotiertem Silizium |
| JPH02178923A (ja) * | 1988-12-29 | 1990-07-11 | Fujitsu Ltd | 半導体装置の製造方法 |
| US5162262A (en) * | 1989-03-14 | 1992-11-10 | Mitsubishi Denki Kabushiki Kaisha | Multi-layered interconnection structure for a semiconductor device and manufactured method thereof |
| DE59010140D1 (de) * | 1989-05-31 | 1996-03-28 | Siemens Ag | Verfahren zum grossflächigen elektrischen Kontaktieren eines Halbleiterkristallkörpers mit Hilfe von Elektrolyten |
| US5093710A (en) * | 1989-07-07 | 1992-03-03 | Seiko Epson Corporation | Semiconductor device having a layer of titanium nitride on the side walls of contact holes and method of fabricating same |
| US4994162A (en) * | 1989-09-29 | 1991-02-19 | Materials Research Corporation | Planarization method |
| US5108951A (en) * | 1990-11-05 | 1992-04-28 | Sgs-Thomson Microelectronics, Inc. | Method for forming a metal contact |
| EP0430403B1 (en) * | 1989-11-30 | 1998-01-07 | STMicroelectronics, Inc. | Method for fabricating interlevel contacts |
| US5108570A (en) * | 1990-03-30 | 1992-04-28 | Applied Materials, Inc. | Multistep sputtering process for forming aluminum layer over stepped semiconductor wafer |
| US5171412A (en) * | 1991-08-23 | 1992-12-15 | Applied Materials, Inc. | Material deposition method for integrated circuit manufacturing |
-
1993
- 1993-04-30 US US08/054,200 patent/US6033534A/en not_active Expired - Fee Related
- 1993-05-04 EP EP93107221A patent/EP0574687B1/de not_active Expired - Lifetime
- 1993-05-04 AT AT93107221T patent/ATE164968T1/de not_active IP Right Cessation
- 1993-05-04 DE DE59308367T patent/DE59308367D1/de not_active Expired - Fee Related
- 1993-05-04 ES ES93107221T patent/ES2115692T3/es not_active Expired - Lifetime
- 1993-05-17 JP JP13697193A patent/JP3305811B2/ja not_active Expired - Fee Related
- 1993-05-19 BR BR9301928A patent/BR9301928A/pt not_active IP Right Cessation
- 1993-05-19 FI FI932295A patent/FI932295A/fi unknown
Also Published As
| Publication number | Publication date |
|---|---|
| EP0574687A3 (en) | 1994-05-18 |
| ES2115692T3 (es) | 1998-07-01 |
| DE59308367D1 (de) | 1998-05-14 |
| JPH0637040A (ja) | 1994-02-10 |
| ATE164968T1 (de) | 1998-04-15 |
| BR9301928A (pt) | 1994-03-29 |
| FI932295A0 (fi) | 1993-05-19 |
| EP0574687B1 (de) | 1998-04-08 |
| JP3305811B2 (ja) | 2002-07-24 |
| EP0574687A2 (de) | 1993-12-22 |
| US6033534A (en) | 2000-03-07 |
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