FI860222A0 - Halvledarkomponent omfattande högspännings-MOS fälteffekttransistorer och lågspännings-MOS fälteffekttransistorer - Google Patents

Halvledarkomponent omfattande högspännings-MOS fälteffekttransistorer och lågspännings-MOS fälteffekttransistorer

Info

Publication number
FI860222A0
FI860222A0 FI860222A FI860222A FI860222A0 FI 860222 A0 FI860222 A0 FI 860222A0 FI 860222 A FI860222 A FI 860222A FI 860222 A FI860222 A FI 860222A FI 860222 A0 FI860222 A0 FI 860222A0
Authority
FI
Finland
Prior art keywords
channel transistors
voltage mos
mos channel
semiconductor component
component including
Prior art date
Application number
FI860222A
Other languages
English (en)
Finnish (fi)
Other versions
FI90599B (sv
FI90599C (sv
FI860222A (sv
Inventor
Kiyotoshi Nakagawa
Kenzo Kawano
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of FI860222A0 publication Critical patent/FI860222A0/sv
Publication of FI860222A publication Critical patent/FI860222A/sv
Publication of FI90599B publication Critical patent/FI90599B/sv
Application granted granted Critical
Publication of FI90599C publication Critical patent/FI90599C/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/404—Multiple field plate structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
FI860222A 1985-01-19 1986-01-17 Halvledarkomponent omfattande högspännings-MOS fälteffekttransistorer och lågspännings-MOS fälteffekttransistorer FI90599C (sv)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60007776A JPS61168253A (ja) 1985-01-19 1985-01-19 高耐圧ｍｏｓ電界効果半導体装置
JP777685 1985-01-19

Publications (4)

Publication Number Publication Date
FI860222A0 true FI860222A0 (sv) 1986-01-17
FI860222A FI860222A (sv) 1986-07-20
FI90599B FI90599B (sv) 1993-11-15
FI90599C FI90599C (sv) 1994-02-25

Family

ID=11675074

Family Applications (1)

Application Number Title Priority Date Filing Date
FI860222A FI90599C (sv) 1985-01-19 1986-01-17 Halvledarkomponent omfattande högspännings-MOS fälteffekttransistorer och lågspännings-MOS fälteffekttransistorer

Country Status (5)

Country Link
US (1) US4926243A (sv)
JP (1) JPS61168253A (sv)
DE (1) DE3601326A1 (sv)
FI (1) FI90599C (sv)
NL (1) NL189326C (sv)

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DE3641299A1 (de) * 1986-12-03 1988-06-16 Philips Patentverwaltung Integrierte halbleiter-schaltung mit mehrlagenverdrahtung
JP2555889B2 (ja) * 1989-06-23 1996-11-20 日本電気株式会社 高耐圧半導体装置
FR2650439B1 (fr) * 1989-07-27 1991-11-15 Sgs Thomson Microelectronics Circuit integre vdmos/logique comprenant une diode
JPH03227585A (ja) * 1989-10-30 1991-10-08 Minolta Camera Co Ltd レ−ザ光源ユニット
US5329155A (en) * 1990-04-24 1994-07-12 Xerox Corporation Thin film integrated circuit resistor
US5040045A (en) * 1990-05-17 1991-08-13 U.S. Philips Corporation High voltage MOS transistor having shielded crossover path for a high voltage connection bus
US5122859A (en) * 1990-06-29 1992-06-16 Texas Instruments Incorporated Iterative self-aligned contact metallization process
US5650359A (en) * 1991-05-06 1997-07-22 Texas Instruments Incorporated Composite dielectric passivation of high density circuits
US5587329A (en) * 1994-08-24 1996-12-24 David Sarnoff Research Center, Inc. Method for fabricating a switching transistor having a capacitive network proximate a drift region
KR0175277B1 (ko) * 1996-02-29 1999-02-01 김광호 중첩된 필드플레이트구조를 갖는 전력반도체장치 및 그의 제조방법
US5770880A (en) * 1996-09-03 1998-06-23 Harris Corporation P-collector H.V. PMOS switch VT adjusted source/drain
US6110804A (en) * 1996-12-02 2000-08-29 Semiconductor Components Industries, Llc Method of fabricating a semiconductor device having a floating field conductor
US6750506B2 (en) 1999-12-17 2004-06-15 Matsushita Electric Industrial Co., Ltd. High-voltage semiconductor device
US6614088B1 (en) 2000-02-18 2003-09-02 James D. Beasom Breakdown improvement method and sturcture for lateral DMOS device
US6617652B2 (en) 2001-03-22 2003-09-09 Matsushita Electric Industrial Co., Ltd. High breakdown voltage semiconductor device
KR100535062B1 (ko) 2001-06-04 2005-12-07 마츠시타 덴끼 산교 가부시키가이샤 고내압 반도체장치
US6472722B1 (en) * 2001-07-03 2002-10-29 Industrial Technology Research Institute Termination structure for high voltage devices
US6573558B2 (en) 2001-09-07 2003-06-03 Power Integrations, Inc. High-voltage vertical transistor with a multi-layered extended drain structure
US6635544B2 (en) * 2001-09-07 2003-10-21 Power Intergrations, Inc. Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
US7786533B2 (en) * 2001-09-07 2010-08-31 Power Integrations, Inc. High-voltage vertical transistor with edge termination structure
US7221011B2 (en) * 2001-09-07 2007-05-22 Power Integrations, Inc. High-voltage vertical transistor with a multi-gradient drain doping profile
US6555883B1 (en) * 2001-10-29 2003-04-29 Power Integrations, Inc. Lateral power MOSFET for high switching speeds
US6744117B2 (en) * 2002-02-28 2004-06-01 Motorola, Inc. High frequency semiconductor device and method of manufacture
JP3846796B2 (ja) * 2002-11-28 2006-11-15 三菱電機株式会社 半導体装置
WO2005029586A1 (en) * 2003-09-22 2005-03-31 Koninklijke Philips Electronics, N.V. Dynamic control of capacitance elements in field effect semiconductor devices
JP4667756B2 (ja) * 2004-03-03 2011-04-13 三菱電機株式会社 半導体装置
US7896875B2 (en) * 2004-07-20 2011-03-01 Microline Surgical, Inc. Battery powered electrosurgical system
US7348656B2 (en) * 2005-09-22 2008-03-25 International Rectifier Corp. Power semiconductor device with integrated passive component
US7468536B2 (en) 2007-02-16 2008-12-23 Power Integrations, Inc. Gate metal routing for transistor with checkerboarded layout
US7859037B2 (en) 2007-02-16 2010-12-28 Power Integrations, Inc. Checkerboarded high-voltage vertical transistor layout
US8653583B2 (en) * 2007-02-16 2014-02-18 Power Integrations, Inc. Sensing FET integrated with a high-voltage transistor
US7595523B2 (en) * 2007-02-16 2009-09-29 Power Integrations, Inc. Gate pullback at ends of high-voltage vertical transistor structure
US7557406B2 (en) * 2007-02-16 2009-07-07 Power Integrations, Inc. Segmented pillar layout for a high-voltage vertical transistor
US10325988B2 (en) 2013-12-13 2019-06-18 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped field plates
US9543396B2 (en) 2013-12-13 2017-01-10 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped regions
US10971624B2 (en) * 2018-03-19 2021-04-06 Macronix International Co., Ltd. High-voltage transistor devices with two-step field plate structures

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Publication number Priority date Publication date Assignee Title
JPS4828826A (sv) * 1971-08-16 1973-04-17
JPS5232270A (en) * 1975-09-05 1977-03-11 Hitachi Ltd Passivation film formaion by sputtering
US4177480A (en) * 1975-10-02 1979-12-04 Licentia Patent-Verwaltungs-G.M.B.H. Integrated circuit arrangement with means for avoiding undesirable capacitive coupling between leads
JPS5327374A (en) * 1976-08-26 1978-03-14 Sharp Corp High voltage drive metal oxide semiconductor device
DE2713936A1 (de) * 1977-03-29 1978-10-12 Siemens Ag Verfahren zum herstellen einer halbleitervorrichtung
US4290077A (en) * 1979-05-30 1981-09-15 Xerox Corporation High voltage MOSFET with inter-device isolation structure
US4536941A (en) * 1980-03-21 1985-08-27 Kuo Chang Kiang Method of making high density dynamic memory cell
JPS57117268A (en) * 1981-01-14 1982-07-21 Toshiba Corp Semiconductor device
GB2097581A (en) * 1981-04-24 1982-11-03 Hitachi Ltd Shielding semiconductor integrated circuit devices from light
US4519050A (en) * 1982-06-17 1985-05-21 Intel Corporation Radiation shield for an integrated circuit memory with redundant elements
JPS604265A (ja) * 1983-06-22 1985-01-10 Nec Corp 絶縁ゲ−ト型電界効果半導体装置

Also Published As

Publication number Publication date
US4926243A (en) 1990-05-15
FI90599B (sv) 1993-11-15
NL189326C (nl) 1993-03-01
NL189326B (nl) 1992-10-01
JPS61168253A (ja) 1986-07-29
NL8600090A (nl) 1986-08-18
FI90599C (sv) 1994-02-25
DE3601326C2 (sv) 1993-07-01
DE3601326A1 (de) 1986-07-24
FI860222A (sv) 1986-07-20

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Legal Events

Date Code Title Description
BB Publication of examined application
FG Patent granted

Owner name: SHARP KABUSHIKI KAISHA

MA Patent expired