FI811992L - Portstyrkrets foer statisk induktionstransistor - Google Patents

Portstyrkrets foer statisk induktionstransistor

Info

Publication number
FI811992L
FI811992L FI811992A FI811992A FI811992L FI 811992 L FI811992 L FI 811992L FI 811992 A FI811992 A FI 811992A FI 811992 A FI811992 A FI 811992A FI 811992 L FI811992 L FI 811992L
Authority
FI
Finland
Prior art keywords
statisk
portstyrkrets
induktionstransistor
foer
statisk induktionstransistor
Prior art date
Application number
FI811992A
Other languages
English (en)
Other versions
FI73102B (fi
FI73102C (fi
Inventor
Shuhei Furuichi
Masakazu Suzuki
Toshiaki Ikeda
Original Assignee
Morita Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Morita Mfg filed Critical Morita Mfg
Publication of FI811992L publication Critical patent/FI811992L/fi
Publication of FI73102B publication Critical patent/FI73102B/fi
Application granted granted Critical
Publication of FI73102C publication Critical patent/FI73102C/fi

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04Modifications for accelerating switching
    • H03K17/041Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6877Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/689Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
    • H03K17/691Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
FI811992A 1980-06-27 1981-06-25 Gallerstyrkrets vid en statisk induktionstransistor. FI73102C (fi)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8805980A JPS5713817A (en) 1980-06-27 1980-06-27 Gate driving circuit of electrostatic inductive transistor
JP8805980 1980-06-27

Publications (3)

Publication Number Publication Date
FI811992L true FI811992L (fi) 1981-12-28
FI73102B FI73102B (fi) 1987-04-30
FI73102C FI73102C (fi) 1987-08-10

Family

ID=13932266

Family Applications (1)

Application Number Title Priority Date Filing Date
FI811992A FI73102C (fi) 1980-06-27 1981-06-25 Gallerstyrkrets vid en statisk induktionstransistor.

Country Status (4)

Country Link
US (1) US4410809A (fi)
JP (1) JPS5713817A (fi)
DE (1) DE3125242C2 (fi)
FI (1) FI73102C (fi)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58164338U (ja) * 1982-04-27 1983-11-01 フアナツク株式会社 無接点リレ−
DE3280350D1 (de) * 1982-08-25 1991-09-26 Ibm Deutschland Transistor-leistungsverstaerker mit verringerten schaltzeiten.
JPS604037U (ja) * 1983-06-22 1985-01-12 ヤマハ株式会社 電力増幅用mos−fetのドライブ回路
DE3615417A1 (de) * 1986-05-07 1987-11-12 Bosch Gmbh Robert Anzeigevorrichtung fuer informationen auf lc-display
DE3822958A1 (de) * 1988-07-07 1990-01-11 Olympia Aeg Modulationsverstaerker fuer hohe spannungen
DE3822991A1 (de) * 1988-07-07 1990-01-11 Olympia Aeg Hochspannungsschalter
US4859927A (en) * 1988-10-28 1989-08-22 Fisher Scientific Company Power supply with improved switching regulator
US5134323A (en) * 1990-08-03 1992-07-28 Congdon James E Three terminal noninverting transistor switch
GB2427482B (en) * 2004-07-02 2007-05-02 Ohm Ltd Electromagnetic surveying
EP3148077B1 (en) 2015-09-25 2019-07-17 Delta Electronics (Thailand) Public Co., Ltd. Driver for a p-channel mosfet

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL260384A (fi) * 1960-01-25
DE2131269C3 (de) * 1971-06-24 1980-06-12 Te Ka De Felten & Guilleaume Fernmeldeanlagen Gmbh, 8500 Nuernberg Schaltungsanordnung zum Umpolen einer Gleichspannung
JPS54102859A (en) * 1978-01-30 1979-08-13 Sony Corp Pulse amplifier circuit
JPS54134547A (en) * 1978-04-11 1979-10-19 Sony Corp Mosfet switching circuit
US4347445A (en) * 1979-12-31 1982-08-31 Exxon Research And Engineering Co. Floating hybrid switch

Also Published As

Publication number Publication date
FI73102B (fi) 1987-04-30
DE3125242A1 (de) 1982-03-04
JPS5713817A (en) 1982-01-23
DE3125242C2 (de) 1983-01-27
US4410809A (en) 1983-10-18
FI73102C (fi) 1987-08-10
JPS619776B2 (fi) 1986-03-26

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Legal Events

Date Code Title Description
MM Patent lapsed

Owner name: KABUSHIKI KAISHA MORITA SEISAKUSHO