FI20175201A - Quartz crystal microbalance unit for ALD systems - Google Patents

Quartz crystal microbalance unit for ALD systems

Info

Publication number
FI20175201A
FI20175201A FI20175201A FI20175201A FI20175201A FI 20175201 A FI20175201 A FI 20175201A FI 20175201 A FI20175201 A FI 20175201A FI 20175201 A FI20175201 A FI 20175201A FI 20175201 A FI20175201 A FI 20175201A
Authority
FI
Finland
Prior art keywords
quartz crystal
crystal microbalance
ald systems
unit
microbalance unit
Prior art date
Application number
FI20175201A
Other languages
Finnish (fi)
Swedish (sv)
Inventor
Laurent Lecordier
Michael Ruffo
Original Assignee
Ultratech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ultratech Inc filed Critical Ultratech Inc
Publication of FI20175201A publication Critical patent/FI20175201A/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523Pulsed gas flow or change of composition over time
    • C23C16/45525Atomic layer deposition [ALD]
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52Controlling or regulating the coating process
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523Pulsed gas flow or change of composition over time
    • C23C16/45525Atomic layer deposition [ALD]
    • C23C16/45544Atomic layer deposition [ALD] characterized by the apparatus
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01GWEIGHING
    • G01G3/00Weighing apparatus characterised by the use of elastically-deformable members, e.g. spring balances
    • G01G3/12Weighing apparatus characterised by the use of elastically-deformable members, e.g. spring balances wherein the weighing element is in the form of a solid body stressed by pressure or tension during weighing
    • G01G3/16Weighing apparatus characterised by the use of elastically-deformable members, e.g. spring balances wherein the weighing element is in the form of a solid body stressed by pressure or tension during weighing measuring variations of frequency of oscillations of the body
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/02Analysing fluids
    • G01N29/022Fluid sensors based on microsensors, e.g. quartz crystal-microbalance [QCM], surface acoustic wave [SAW] devices, tuning forks, cantilevers, flexural plate wave [FPW] devices
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N5/00Analysing materials by weighing, e.g. weighing small particles separated from a gas or liquid

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Acoustics & Sound (AREA)
  • Chemical Vapour Deposition (AREA)
FI20175201A 2016-03-08 2017-03-07 Quartz crystal microbalance unit for ALD systems FI20175201A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201662304968P 2016-03-08 2016-03-08

Publications (1)

Publication Number Publication Date
FI20175201A true FI20175201A (en) 2017-09-09

Family

ID=59700439

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20175201A FI20175201A (en) 2016-03-08 2017-03-07 Quartz crystal microbalance unit for ALD systems

Country Status (8)

Country Link
US (1) US20170260629A1 (en)
JP (1) JP2017161523A (en)
KR (1) KR20170104946A (en)
CN (1) CN107164743A (en)
DE (1) DE102017202960A1 (en)
FI (1) FI20175201A (en)
SG (1) SG10201701848RA (en)
TW (1) TWI626330B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD743358S1 (en) * 2013-09-03 2015-11-17 Abb S.P.A. Cabinet for electrical switchboards
CN107917955B (en) * 2017-12-07 2019-12-03 江苏大学 Novel light auxiliary quartz crystal microbalance and its detection method
US11551905B2 (en) * 2018-03-19 2023-01-10 Intel Corporation Resonant process monitor
CN108982277B (en) * 2018-06-20 2020-05-19 华中科技大学 Preparation method of quartz crystal microbalance humidity sensor and product
DE102022128091B4 (en) * 2022-10-25 2024-06-06 Technische Universität Dresden, Körperschaft des öffentlichen Rechts Wafer chuck, carrier and process

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2748246B2 (en) * 1995-11-14 1998-05-06 デベロップメント センター フォー バイオテクノロジー Cartridge-shaped piezoelectric sensor chip
TW403791B (en) * 1997-06-02 2000-09-01 Applied Materials Inc Quartz crystal microbalance for measurement of CVD exhaust deposits
JP2004528677A (en) * 2000-11-29 2004-09-16 サーモセラミックス インコーポレイテッド Resistance heater and its use
US7150789B2 (en) 2002-07-29 2006-12-19 Micron Technology, Inc. Atomic layer deposition methods
US8202575B2 (en) 2004-06-28 2012-06-19 Cambridge Nanotech, Inc. Vapor deposition systems and methods
JP2006066593A (en) * 2004-08-26 2006-03-09 Hitachi Kokusai Electric Inc Substrate-processing apparatus
GB0708346D0 (en) * 2007-04-30 2007-06-06 Attana Ab Sensor
JP2010206081A (en) * 2009-03-05 2010-09-16 Tokyo Electron Ltd Cooling method and cooling system for body to be heated, and substrate processing apparatus with the cooling system
US9856563B2 (en) * 2012-08-22 2018-01-02 Uchicago Argonne, Llc Micro-balance sensor integrated with atomic layer deposition chamber
US9506895B2 (en) * 2013-05-17 2016-11-29 Inficon, Inc. Combined crystal retainer and contact system for deposition monitor sensors
TWI588286B (en) 2013-11-26 2017-06-21 烏翠泰克股份有限公司 Method, cycle and device of improved plasma enhanced ald

Also Published As

Publication number Publication date
KR20170104946A (en) 2017-09-18
CN107164743A (en) 2017-09-15
DE102017202960A1 (en) 2017-09-14
JP2017161523A (en) 2017-09-14
TWI626330B (en) 2018-06-11
US20170260629A1 (en) 2017-09-14
SG10201701848RA (en) 2017-10-30
TW201800604A (en) 2018-01-01

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Legal Events

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