FI20155153A - Microelectromechanical structure and device - Google Patents

Microelectromechanical structure and device Download PDF

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Publication number
FI20155153A
FI20155153A FI20155153A FI20155153A FI20155153A FI 20155153 A FI20155153 A FI 20155153A FI 20155153 A FI20155153 A FI 20155153A FI 20155153 A FI20155153 A FI 20155153A FI 20155153 A FI20155153 A FI 20155153A
Authority
FI
Finland
Prior art keywords
microelectromechanical structure
microelectromechanical
Prior art date
Application number
FI20155153A
Other languages
Finnish (fi)
Swedish (sv)
Other versions
FI127229B (en
Inventor
Matti Liukku
Jaakko Ruohio
Hannu Vesterinen
Original Assignee
Murata Manufacturing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co filed Critical Murata Manufacturing Co
Priority to FI20155153A priority Critical patent/FI127229B/en
Priority to TW105104731A priority patent/TWI619668B/en
Priority to PCT/IB2016/051265 priority patent/WO2016142832A1/en
Priority to CN201680014405.8A priority patent/CN107406250B/en
Priority to JP2017547502A priority patent/JP6627883B2/en
Priority to EP16711347.1A priority patent/EP3268305B1/en
Priority to US15/064,879 priority patent/US9969606B2/en
Publication of FI20155153A publication Critical patent/FI20155153A/en
Application granted granted Critical
Publication of FI127229B publication Critical patent/FI127229B/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0035—Constitution or structural means for controlling the movement of the flexible or deformable elements
    • B81B3/004—Angular deflection
    • B81B3/0045—Improve properties related to angular swinging, e.g. control resonance frequency
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0035—Constitution or structural means for controlling the movement of the flexible or deformable elements
    • B81B3/0056—Adjusting the distance between two elements, at least one of them being movable, e.g. air-gap tuning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/04—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of effective area of electrode
    • H01G5/14—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of effective area of electrode due to longitudinal movement of electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0221—Variable capacitors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0271—Resonators; ultrasonic resonators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/06—Devices comprising elements which are movable in relation to each other, e.g. slidable or rotatable
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
    • G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
    • G01P2015/0814—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)
FI20155153A 2015-03-09 2015-03-09 Microelectromechanical structure and device FI127229B (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FI20155153A FI127229B (en) 2015-03-09 2015-03-09 Microelectromechanical structure and device
TW105104731A TWI619668B (en) 2015-03-09 2016-02-18 A microelectromechanical structure and device
PCT/IB2016/051265 WO2016142832A1 (en) 2015-03-09 2016-03-07 A microelectromechanical capacitive sensor structure and device
CN201680014405.8A CN107406250B (en) 2015-03-09 2016-03-07 Micro electronmechanical capacitive sensor structure and device
JP2017547502A JP6627883B2 (en) 2015-03-09 2016-03-07 Structure and device of microelectromechanical capacitance sensor
EP16711347.1A EP3268305B1 (en) 2015-03-09 2016-03-07 A microelectromechanical capacitive sensor structure and device
US15/064,879 US9969606B2 (en) 2015-03-09 2016-03-09 Microelectromechanical structure and device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20155153A FI127229B (en) 2015-03-09 2015-03-09 Microelectromechanical structure and device

Publications (2)

Publication Number Publication Date
FI20155153A true FI20155153A (en) 2016-09-10
FI127229B FI127229B (en) 2018-02-15

Family

ID=55588322

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20155153A FI127229B (en) 2015-03-09 2015-03-09 Microelectromechanical structure and device

Country Status (7)

Country Link
US (1) US9969606B2 (en)
EP (1) EP3268305B1 (en)
JP (1) JP6627883B2 (en)
CN (1) CN107406250B (en)
FI (1) FI127229B (en)
TW (1) TWI619668B (en)
WO (1) WO2016142832A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112014596A (en) * 2019-05-30 2020-12-01 合肥杰发科技有限公司 Accelerometer and manufacturing method thereof
CN112014595A (en) * 2019-05-30 2020-12-01 合肥杰发科技有限公司 Accelerometer and manufacturing method thereof

Families Citing this family (7)

* Cited by examiner, † Cited by third party
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DE102017217009B3 (en) 2017-09-26 2018-07-19 Robert Bosch Gmbh MEMS device and corresponding operating method
JP7056099B2 (en) * 2017-11-28 2022-04-19 セイコーエプソン株式会社 Physical quantity sensor, physical quantity sensor device, composite sensor device, inertial measurement unit, mobile positioning device, portable electronic device, electronic device and mobile body
US10712359B2 (en) * 2018-05-01 2020-07-14 Nxp Usa, Inc. Flexure with enhanced torsional stiffness and MEMS device incorporating same
US10794701B2 (en) 2018-05-01 2020-10-06 Nxp Usa, Inc. Inertial sensor with single proof mass and multiple sense axis capability
CN109490576A (en) * 2018-12-19 2019-03-19 成都力创云科技有限公司 Based on a kind of fully differential capacitor MEMS acceleration by SOI
JP2023520750A (en) * 2020-03-03 2023-05-19 インフィコン インコーポレイティド Systems and methods for monitoring semiconductor processes
JP7389767B2 (en) 2021-02-26 2023-11-30 株式会社東芝 Sensors and electronic devices

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JP3960502B2 (en) * 1999-03-16 2007-08-15 学校法人立命館 Capacitive sensor
JP4063057B2 (en) * 2002-11-20 2008-03-19 株式会社デンソー Capacitive acceleration sensor
WO2004077073A1 (en) 2003-02-24 2004-09-10 University Of Florida Integrated monolithic tri-axial micromachined accelerometer
US7469588B2 (en) 2006-05-16 2008-12-30 Honeywell International Inc. MEMS vertical comb drive with improved vibration performance
WO2008120256A1 (en) * 2007-04-03 2008-10-09 Stmicroelectronics S.R.L. Capacitive position sensing in an electrostatic micromotor
EP1998345A1 (en) 2007-05-31 2008-12-03 Infineon Technologies SensoNor AS Method of manufacturing capacitive elements for a capacitive device
US7690254B2 (en) 2007-07-26 2010-04-06 Honeywell International Inc. Sensor with position-independent drive electrodes in multi-layer silicon on insulator substrate
EP2257821B1 (en) * 2008-03-26 2012-10-24 Hewlett-Packard Development Company, L.P. Capacitive sensor having cyclic and absolute electrode sets
JP2010286471A (en) * 2009-05-15 2010-12-24 Seiko Epson Corp Mems sensor and electronic apparatus
CN101871952B (en) * 2010-06-11 2012-07-11 瑞声声学科技(深圳)有限公司 MEMS (Micro Electro Mechanical System) acceleration sensor
AT11920U3 (en) 2010-08-12 2012-03-15 Oesterreichische Akademie Der Wissenschaften METHOD FOR PRODUCING A MEMS DEVICE WITH HIGH ASPECT RATIO, AND CONVERTER AND CONDENSER
US20120048019A1 (en) * 2010-08-26 2012-03-01 Hanqin Zhou Highly sensitive capacitive sensor and methods of manufacturing the same
EP3059595B1 (en) * 2012-01-12 2018-07-04 Murata Electronics Oy Acceleration sensor structure and use thereof
US20130229747A1 (en) * 2012-03-01 2013-09-05 Agilent Technologies, Inc. Balanced voltage variable capacitor device
EP2861524A4 (en) 2012-06-13 2016-07-06 Purdue Research Foundation Microelectromechanical system and methods of use
JP5783201B2 (en) * 2013-03-27 2015-09-24 株式会社デンソー Capacitive physical quantity sensor
FI126199B (en) * 2013-06-28 2016-08-15 Murata Manufacturing Co CAPACITIVE MICROMECHANICAL SENSOR STRUCTURE AND MICROMECHANICAL ACCELERATOR SENSOR
CN203631322U (en) * 2013-12-25 2014-06-04 歌尔声学股份有限公司 Capacitor and capacitance type sensor comprising same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112014596A (en) * 2019-05-30 2020-12-01 合肥杰发科技有限公司 Accelerometer and manufacturing method thereof
CN112014595A (en) * 2019-05-30 2020-12-01 合肥杰发科技有限公司 Accelerometer and manufacturing method thereof
CN112014595B (en) * 2019-05-30 2022-10-28 武汉杰开科技有限公司 Accelerometer and manufacturing method thereof
CN112014596B (en) * 2019-05-30 2022-10-28 武汉杰开科技有限公司 Accelerometer and manufacturing method thereof

Also Published As

Publication number Publication date
FI127229B (en) 2018-02-15
EP3268305A1 (en) 2018-01-17
JP6627883B2 (en) 2020-01-08
TW201704141A (en) 2017-02-01
CN107406250A (en) 2017-11-28
WO2016142832A1 (en) 2016-09-15
US9969606B2 (en) 2018-05-15
EP3268305B1 (en) 2021-05-19
CN107406250B (en) 2019-10-01
TWI619668B (en) 2018-04-01
US20160264401A1 (en) 2016-09-15
JP2018514397A (en) 2018-06-07

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