CN203631322U - Capacitor and capacitance type sensor comprising same - Google Patents
Capacitor and capacitance type sensor comprising same Download PDFInfo
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- CN203631322U CN203631322U CN201320865453.1U CN201320865453U CN203631322U CN 203631322 U CN203631322 U CN 203631322U CN 201320865453 U CN201320865453 U CN 201320865453U CN 203631322 U CN203631322 U CN 203631322U
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- 239000003990 capacitor Substances 0.000 title claims abstract description 101
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 abstract description 14
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000000034 method Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000007115 recruitment Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
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Abstract
The embodiments of the utility model disclose a capacitor and a capacitance type sensor comprising the same. The capacitor comprises a plurality of first pole plates, a plurality of second pole plates and conducting layers located on surfaces of the first pole plates and surfaces of the second pole plates; and the first pole plates and the second pole plates are arranged at intervals; surfaces of the conducting layers are rough surfaces, and the roughness of each rough surface is greater than 10nm. So, under the condition that height of the first pole plates and height of the second pole plates can be changed, a direct-facing area of the capacitor is increased; and thus, under the condition that the ratio of the height H of the two pole plates of the capacitor to the distance W between the two pole plates is not changed, an initial capacitance value of the capacitor is increased, that is to say, under the condition that the technology difficulty of capacitor fabrication is not increased, capacitance values of the capacitor and the capacitance type sensor comprising the same are increased.
Description
Technical field
The utility model relates to field of micro electromechanical technology, relates in particular to a kind of capacitor and comprises the capacitance type sensor of this capacitor.
Background technology
MEMS is MEMS (micro electro mechanical system) (Microelectro Mechanical Systems), is the research frontier of the multidisciplinary intersection that grows up on microelectric technique basis.Through the development of four more than ten years, become one of great sciemtifec and technical sphere of attracting attention in the world.It relates to multiple subject and the technology such as electronics, machinery, material, physics, chemistry, biology, medical science, has broad application prospects.
By the end of 2010, the whole world has about 600 Yu Jia units to be engaged in the research and production work of MEMS, developed the hundreds of kind product including micro pressure sensor, acceleration transducer, micro-ink jet-print head, digital micromirror display device, wherein, MEMS transducer accounts for sizable ratio.
MEMS transducer is to adopt microelectronics and the produced novel sensor of micromachining technology.Compared with traditional transducer, it has that volume is little, lightweight, cost is low, low in energy consumption, reliability is high, be applicable to mass production, be easy to integrated and realize intelligentized feature, meanwhile, make him can complete the irrealizable function of some traditional mechanical pick-up device in the characteristic size of micron dimension.
At present in capacitive MEMS sensor process, normal interdigital electric capacity (as shown in Figure 1) or the parallel plate capacitor (as shown in Figure 2) of adopting is as driving or induction, but, being subject to the restriction of technological ability, in prior art, the capacitance of capacitive MEMS transducer is less.
Utility model content
For solving the problems of the technologies described above, the utility model embodiment provides a kind of capacitor and has comprised the capacitance type sensor of this capacitor, with in the situation that not changing described capacitor two-plate height and two-plate spacing ratio, improve described capacitor and comprise the capacitance of the capacitance type sensor of this capacitor.
For addressing the above problem, the utility model embodiment provides following technical scheme:
A kind of capacitor, comprising:
Multiple spaced the first pole plates and the second pole plate;
Be positioned at the conductive layer of described the first pole plate and the second polar board surface, the surface of described conductive layer is matsurface, and the roughness of described matsurface is greater than 10nm.
Preferably, described matsurface is serrated face.
Preferably, described matsurface is wavy surface.
Preferably, described conductive layer is doped polycrystalline silicon.
Preferably, described conductive layer is the conductive layer that is coated in described the first pole plate and the second polar board surface.
Preferably, described capacitor is plane-parallel capacitor or interdigitated capacitors.
A kind of capacitance type sensor, described capacitance type sensor comprises capacitor described in above-mentioned any one.
Preferably, described capacitance type sensor is MEMS transducer.
Compared with prior art, technique scheme has the following advantages:
The technical scheme that the utility model embodiment provides, except comprising the first pole plate and the second pole plate, also comprise the conductive layer that is positioned at described the first pole plate and the second polar board surface, the surface of described conductive layer is matsurface, and the roughness of described matsurface is greater than 10nm, thereby can change under the condition of described the first pole plate and the second pole plate height, the right opposite that increases described capacitor is long-pending, and then do not changing under the condition of distance W ratio between the two-plate height H of described capacitor and two-plate, increase the initial capacitance value of described capacitor, under the condition of technology difficulty that does not increase described capacitor fabrication, increase described capacitor and comprise the capacitance of the capacitance type sensor of this capacitor.
Accompanying drawing explanation
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is embodiment more of the present utility model, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the structural representation of interdigital electric capacity in prior art;
Fig. 2 is the structural representation of parallel plate capacitor in prior art;
The structural representation that Fig. 3 is the capacitor that provides in the utility model embodiment;
The end view that Fig. 4 is the capacitor that provides in embodiment of the utility model;
The end view that Fig. 5 is the capacitor that provides in another embodiment of the utility model.
Embodiment
Just as described in the background section, be subject to the restriction of technological ability, in prior art, the capacitance of capacitive MEMS transducer is less.
Inventor studies discovery, this is because need thicker material layer in MEMS sensor construction, and in the time utilizing etching technics etch thicknesses compared with thick and structure that gap is less, technology difficulty is very large, therefore, be subject to the restriction of technological ability, the ratio H/W of the distance W between the height H to capacitor plate and two pole plates has certain restriction.If increase the height of capacitor, must increase the distance W between two pole plates of capacitor, to avoid increasing the difficulty of etching technics.Take plane-parallel capacitor as example, as shown in Figure 2, its capacitance
wherein, the dielectric Constant that ε is this parallel plate capacitor, the right opposite that A is this parallel plate capacitor is long-pending, and W is the distance between two-plate in this parallel plate capacitor.
Can be found out by this formula, increase the height H of two pole plates in described capacitor, although can increase the long-pending A of the right opposite of two-plate, but also can increase the distance W between two pole plates in described capacitor, and the impact of the height H that in described capacitor, the distance W between two pole plates is greater than two pole plates in described capacitor on the impact of capacitor electrode capacitance on capacitor electrode capacitance, in the situation that increasing in proportion, increase capacitor electrode capacitance decrease that in described capacitor, the distance W between two pole plates causes and be greater than the recruitment that increases the height H of two pole plates in described capacitor and cause capacitor electrode capacitance, thereby cause keeping under the condition that described capacitance H/W is constant, the height H that increases described capacitor two-plate can reduce the initial capacitance value of described capacitor.
In view of this, the utility model embodiment provides a kind of capacitor, comprising: multiple spaced the first pole plates and the second pole plate; Be positioned at the conductive layer of described the first pole plate and the second polar board surface, wherein, the surface of described conductive layer is matsurface, and the roughness of described matsurface is greater than 10nm.
Accordingly, the utility model embodiment also provides a kind of capacitance type sensor that comprises above-mentioned capacitor.
As can be seen here, the capacitor that the utility model embodiment provides and the capacitance type sensor that comprises this capacitor are except comprising the first pole plate and the second pole plate, also comprise the conductive layer that is positioned at described the first pole plate and the second polar board surface, the surface of described conductive layer is matsurface, and the roughness of described matsurface is greater than 10nm, thereby can change under the condition of described the first pole plate and the second pole plate height, the right opposite that increases described capacitor is long-pending, and then do not changing under the condition of distance W ratio between the two-plate height H of described capacitor and two-plate, increase the initial capacitance value of described capacitor, under the condition of technology difficulty that does not increase described capacitor fabrication, increase described capacitor and comprise the capacitance of the capacitance type sensor of this capacitor.
For above-mentioned purpose of the present utility model, feature and advantage can more be become apparent, below in conjunction with accompanying drawing, embodiment of the present utility model is described in detail.
Set forth detail in the following description so that fully understand the utility model.But the utility model can be different from alternate manner described here and implements with multiple, and those skilled in the art can do similar popularization without prejudice to the utility model intension in the situation that.Therefore the utility model is not subject to the restriction of following public concrete enforcement.
Be described in detail for the capacitor that example is provided the utility model embodiment for plane-parallel capacitor with described capacitor below.It should be noted that, the capacitor that the utility model embodiment provides can be plane-parallel capacitor, can be also inter-digital capacitor, can also be the capacitor of other types, and the utility model does not limit this.
As shown in Figure 3, the capacitor that the utility model embodiment provides comprises: multiple spaced the first pole plates 1 and the second pole plate 2; Be positioned at the conductive layer 3 on described the first pole plate 1 and the second pole plate 2 surfaces, wherein, the surface of described conductive layer 3 is matsurface, and the roughness of described matsurface is greater than 10nm.
In an embodiment of the present utility model, described matsurface is serrated face, as shown in Figure 4, in another embodiment of the present utility model, described matsurface is wavy surface, in other embodiment of the present utility model, described matsurface can also be irregularly shaped, as shown in Figure 5, the utility model does not limit this, as long as guarantee that the roughness of described matsurface is greater than 10nm, thereby guaranteeing under the condition that described the first pole plate 1 and the second pole plate 2 areas are constant, the right opposite that increases described capacitor is long-pending, neither increasing described capacitor two-plate height, do not increase under the prerequisite of two-plate length yet, the right opposite that increases described capacitor is long-pending, and then do not changing under the condition of distance W ratio between the two-plate height H of described capacitor and two-plate, increase the initial capacitance value of described capacitor, the capacitor that the utility model embodiment is provided, can be under the condition of technology difficulty that does not increase making, increase the capacitance of described capacitor.
In an embodiment of the present utility model, described conductive layer 3 is for being coated in the conductive layer on described the first pole plate 1 and the second pole plate 2 surfaces; In another embodiment of the present utility model, described conductive layer 3 is for sticking on the conductive layer on described the first pole plate 1 and the second pole plate 2 surfaces; In other embodiment of the present utility model, described conductive layer 3 can also be fixed on described the first pole plate 1 and the second pole plate 2 surfaces by other means, as Rugged POLY(rough polysilicon) growth technique etc., the utility model does not limit this, as long as guarantee that described conductive layer 3 is fixed on described the first pole plate 1 and the second pole plate 2 surfaces.
Preferably, described conductive layer 3 can be doped polycrystalline silicon, but the utility model do not limit this, as long as guarantee that described conductive layer 3 has good electric conductivity, and its surface that deviates from described the first pole plate 1 or the second pole plate 2 is matsurface.
It should be noted that, in the time of the semi-conducting material of described the first pole plate 1 and the second pole plate 2, described conductive layer 3 is preferably and semiconductor technology compatibility, mates with the coefficient of expansion of the first pole plate 1 and the second pole plate 2, and the conductive layer strong with the adhesion of described the first pole plate 1 and the second pole plate 2.Preferred, described conductive layer 3 is the conductive layer that cost of manufacture technique is low.
In sum, the capacitor that the utility model embodiment provides, except comprising the first pole plate and the second pole plate, also comprise the conductive layer that is positioned at described the first pole plate and the second polar board surface, the surface of described conductive layer is matsurface, and the roughness of described matsurface is greater than 10nm, thereby can not change under the condition of described the first pole plate and the second pole plate height, the right opposite that increases described capacitor is long-pending, and then do not changing under the condition of distance W ratio between the two-plate height H of described capacitor and two-plate, increase the initial capacitance value of described capacitor, under the condition of technology difficulty that does not increase described capacitor fabrication, increase the capacitance of described capacitor.
Accordingly, the utility model embodiment also provides a kind of capacitance type sensor, and described capacitance type sensor comprises the capacitor that the arbitrary embodiment of the utility model provides, and comprising: multiple spaced the first pole plates and the second pole plate; Be positioned at the conductive layer of described the first pole plate and the second polar board surface, the surface of described conductive layer is matsurface, and the roughness of described matsurface is greater than 10nm.Wherein, the first pole plate is fixed polar plate, and the second pole plate is can movable plate electrode, be that described the second pole plate can move with respect to described the first pole plate, thus can be in use, according to real needs, by mobile described the second pole plate, change the distance between described the first pole plate and the second pole plate.
Preferably, described capacitance type sensor is MEMS transducer, but the utility model do not limit this, as long as described capacitance type sensor utilizes capacitor as driving or induction, the capacitance type sensor that the utility model embodiment provides is all suitable for.
In the capacitance type sensor providing due to the utility model embodiment, its capacitor is except comprising the first pole plate and the second pole plate, also comprise the conductive layer that is positioned at described the first pole plate and the second polar board surface, the surface of described conductive layer is matsurface, and the roughness of described matsurface is greater than 10nm, thereby do not changing under the condition of distance W ratio between the two-plate height H of described capacitor and two-plate, increase the initial capacitance value of described capacitor, under the condition of technology difficulty that does not increase described capacitor fabrication, increase the capacitance of described capacitance type sensor.
And, for capacitance type sensor, the capacitance variations Δ C=2 ε A of its differential capacitance
0d
0/ (d
0 2-x
2), wherein, ε is relative dielectric constant, A
0the right opposite that is capacitor in described capacitance type sensor is long-pending, d
0for the initial separation of two-plate in described capacitance type sensor, x is the move distance of the second pole plate under dynamic excitation.Can be found out by this formula, in the time that the second pole plate changes with respect to the position of the first pole plate, increase the long-pending A of right opposite of capacitor in described capacitance type sensor
0, can increase the capacitance variations Δ C of described capacitance type sensor, thereby strengthen the signal to noise ratio of described capacitance type sensor.
In sum, the capacitance type sensor that the utility model embodiment provides, can, under the condition of technology difficulty that does not increase described capacitance type sensor making, increase the initial capacitance value of described capacitance type sensor, and increase the signal to noise ratio of described capacitance type sensor.
In this specification, various piece adopts the mode of going forward one by one to describe, and what each part stressed is and the difference of other parts, between various piece identical similar part mutually referring to.
To the above-mentioned explanation of the disclosed embodiments, make professional and technical personnel in the field can realize or use the utility model.To be apparent for those skilled in the art to the multiple modification of these embodiment, General Principle as defined herein can, in the situation that not departing from spirit or scope of the present utility model, realize in other embodiments.Therefore, the utility model will can not be restricted to embodiment illustrated herein, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (8)
1. a capacitor, is characterized in that, comprising:
Multiple spaced the first pole plates and the second pole plate;
Be positioned at the conductive layer of described the first pole plate and the second polar board surface, the surface of described conductive layer is matsurface, and the roughness of described matsurface is greater than 10nm.
2. capacitor according to claim 1, is characterized in that, described matsurface is serrated face.
3. capacitor according to claim 1, is characterized in that, described matsurface is wavy surface.
4. capacitor according to claim 1, is characterized in that, described conductive layer is doped polycrystalline silicon.
5. capacitor according to claim 4, is characterized in that, described conductive layer is the conductive layer that is coated in described the first pole plate and the second polar board surface.
6. according to the capacitor described in claim 1-5 any one, it is characterized in that, described capacitor is plane-parallel capacitor or interdigitated capacitors.
7. a capacitance type sensor, is characterized in that, described capacitance type sensor comprises capacitor described in claim 1-6 any one.
8. capacitance type sensor according to claim 7, is characterized in that, described capacitance type sensor is MEMS transducer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320865453.1U CN203631322U (en) | 2013-12-25 | 2013-12-25 | Capacitor and capacitance type sensor comprising same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320865453.1U CN203631322U (en) | 2013-12-25 | 2013-12-25 | Capacitor and capacitance type sensor comprising same |
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| Publication Number | Publication Date |
|---|---|
| CN203631322U true CN203631322U (en) | 2014-06-04 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201320865453.1U Expired - Lifetime CN203631322U (en) | 2013-12-25 | 2013-12-25 | Capacitor and capacitance type sensor comprising same |
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| CN (1) | CN203631322U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107406250A (en) * | 2015-03-09 | 2017-11-28 | 株式会社村田制作所 | Micro electronmechanical capacitive sensor structure and device |
-
2013
- 2013-12-25 CN CN201320865453.1U patent/CN203631322U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107406250A (en) * | 2015-03-09 | 2017-11-28 | 株式会社村田制作所 | Micro electronmechanical capacitive sensor structure and device |
| CN107406250B (en) * | 2015-03-09 | 2019-10-01 | 株式会社村田制作所 | Micro electronmechanical capacitive sensor structure and device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee after: Goertek Inc. Address before: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee before: Goertek Inc. |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200615 Address after: 266104 room 103, 396 Songling Road, Laoshan District, Qingdao, Shandong Province Patentee after: Goer Microelectronics Co.,Ltd. Address before: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee before: GOERTEK Inc. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140604 |