FI20105982A0 - Läpinäkyvällä johtavalla oksidikerroksella varustettu substraatti ja sen valmistusmenetelmä - Google Patents

Läpinäkyvällä johtavalla oksidikerroksella varustettu substraatti ja sen valmistusmenetelmä

Info

Publication number
FI20105982A0
FI20105982A0 FI20105982A FI20105982A FI20105982A0 FI 20105982 A0 FI20105982 A0 FI 20105982A0 FI 20105982 A FI20105982 A FI 20105982A FI 20105982 A FI20105982 A FI 20105982A FI 20105982 A0 FI20105982 A0 FI 20105982A0
Authority
FI
Finland
Prior art keywords
substrate
oxide film
production method
transparent conductive
conductive oxide
Prior art date
Application number
FI20105982A
Other languages
English (en)
Swedish (sv)
Inventor
Markku Rajala
Original Assignee
Beneq Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beneq Oy filed Critical Beneq Oy
Priority to FI20105982A priority Critical patent/FI20105982A0/fi
Publication of FI20105982A0 publication Critical patent/FI20105982A0/fi
Priority to PCT/FI2011/050792 priority patent/WO2012038592A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/02—Diffusing elements; Afocal elements
    • G02B5/0205—Diffusing elements; Afocal elements characterised by the diffusing properties
    • G02B5/0236—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place within the volume of the element
    • G02B5/0247—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place within the volume of the element by means of voids or pores
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
FI20105982A 2010-09-23 2010-09-23 Läpinäkyvällä johtavalla oksidikerroksella varustettu substraatti ja sen valmistusmenetelmä FI20105982A0 (fi)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FI20105982A FI20105982A0 (fi) 2010-09-23 2010-09-23 Läpinäkyvällä johtavalla oksidikerroksella varustettu substraatti ja sen valmistusmenetelmä
PCT/FI2011/050792 WO2012038592A1 (en) 2010-09-23 2011-09-15 Thin film photovoltaic module and process for its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20105982A FI20105982A0 (fi) 2010-09-23 2010-09-23 Läpinäkyvällä johtavalla oksidikerroksella varustettu substraatti ja sen valmistusmenetelmä

Publications (1)

Publication Number Publication Date
FI20105982A0 true FI20105982A0 (fi) 2010-09-23

Family

ID=42829712

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20105982A FI20105982A0 (fi) 2010-09-23 2010-09-23 Läpinäkyvällä johtavalla oksidikerroksella varustettu substraatti ja sen valmistusmenetelmä

Country Status (2)

Country Link
FI (1) FI20105982A0 (fi)
WO (1) WO2012038592A1 (fi)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101431686B1 (ko) 2012-07-30 2014-08-20 (주)펜제너레이션스 광학필름 및 이를 이용한 디지털펜 시스템
JP6340082B2 (ja) * 2014-01-06 2018-06-06 ペン ジェネレーションズ インコーポレーテッド 光学フィルム及びこれを用いたデジタルペンシステム
US10886437B2 (en) * 2016-11-03 2021-01-05 Lumileds Llc Devices and structures bonded by inorganic coating
JP6634191B1 (ja) * 2018-08-16 2020-01-22 株式会社ヤギ 透過型スクリーン、透過型フィルム、透過型スクリーンの製造方法及び透過型フィルムの製造方法
WO2020036212A1 (ja) * 2018-08-16 2020-02-20 株式会社ヤギ 透過型スクリーン、透過型フィルム、透過型スクリーンの製造方法及び透過型フィルムの製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63119275A (ja) * 1986-11-07 1988-05-23 Sumitomo Bakelite Co Ltd 非晶質シリコン又は薄膜太陽電池
US7582351B2 (en) * 2001-10-25 2009-09-01 Panasonic Electric Works Co., Ltd. Composite thin film holding substrate, transparent conductive film holding substrate, and panel light emitting body
JP3706835B2 (ja) * 2002-02-19 2005-10-19 株式会社カネカ 薄膜光電変換装置
JP4959127B2 (ja) * 2004-10-29 2012-06-20 三菱重工業株式会社 光電変換装置及び光電変換装置用基板
JP5093231B2 (ja) * 2007-04-24 2012-12-12 旭硝子株式会社 膜付き基板、透明導電性膜付き基板および発光素子
KR101033286B1 (ko) * 2010-06-14 2011-05-09 주성엔지니어링(주) 박막형 태양전지 및 그 제조방법

Also Published As

Publication number Publication date
WO2012038592A1 (en) 2012-03-29

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