FI20105981A0 - Läpinäkyvällä johtavalla oksidikerroksella varustettu substraatti ja sen valmistusmenetelmä - Google Patents

Läpinäkyvällä johtavalla oksidikerroksella varustettu substraatti ja sen valmistusmenetelmä

Info

Publication number
FI20105981A0
FI20105981A0 FI20105981A FI20105981A FI20105981A0 FI 20105981 A0 FI20105981 A0 FI 20105981A0 FI 20105981 A FI20105981 A FI 20105981A FI 20105981 A FI20105981 A FI 20105981A FI 20105981 A0 FI20105981 A0 FI 20105981A0
Authority
FI
Finland
Prior art keywords
substrate
oxide film
production method
transparent conductive
conductive oxide
Prior art date
Application number
FI20105981A
Other languages
English (en)
Swedish (sv)
Inventor
Markku Rajala
Olli Pekonen
Original Assignee
Beneq Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beneq Oy filed Critical Beneq Oy
Priority to FI20105981A priority Critical patent/FI20105981A0/fi
Publication of FI20105981A0 publication Critical patent/FI20105981A0/fi
Priority to PCT/FI2011/050791 priority patent/WO2012038591A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
FI20105981A 2010-09-23 2010-09-23 Läpinäkyvällä johtavalla oksidikerroksella varustettu substraatti ja sen valmistusmenetelmä FI20105981A0 (fi)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FI20105981A FI20105981A0 (fi) 2010-09-23 2010-09-23 Läpinäkyvällä johtavalla oksidikerroksella varustettu substraatti ja sen valmistusmenetelmä
PCT/FI2011/050791 WO2012038591A1 (en) 2010-09-23 2011-09-15 Thin film photovoltaic module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20105981A FI20105981A0 (fi) 2010-09-23 2010-09-23 Läpinäkyvällä johtavalla oksidikerroksella varustettu substraatti ja sen valmistusmenetelmä

Publications (1)

Publication Number Publication Date
FI20105981A0 true FI20105981A0 (fi) 2010-09-23

Family

ID=42829711

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20105981A FI20105981A0 (fi) 2010-09-23 2010-09-23 Läpinäkyvällä johtavalla oksidikerroksella varustettu substraatti ja sen valmistusmenetelmä

Country Status (2)

Country Link
FI (1) FI20105981A0 (fi)
WO (1) WO2012038591A1 (fi)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9255328B2 (en) * 2013-03-15 2016-02-09 Robert Bosch Gmbh Metamaterial and method for forming a metamaterial using atomic layer deposition

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100096004A1 (en) * 2006-10-25 2010-04-22 Unidym, Inc. Solar cell with nanostructure electrode(s)
KR100947892B1 (ko) * 2008-03-20 2010-03-17 한국과학기술연구원 나노그레인/나노입자의 네트워크 구조를 가진도체금속산화물 막을 이용한 전도성전극, 이의 제조방법 및이를 이용한 수퍼캐패시터
US8198796B2 (en) * 2008-07-25 2012-06-12 Konica Minolta Holdings, Inc. Transparent electrode and production method of same
US20100307553A1 (en) * 2008-08-26 2010-12-09 Defries Anthony Engineering light manipulation in structured films or coatings
TWI480896B (zh) * 2009-12-04 2015-04-11 Cambrios Technologies Corp 具有增加濁度之以奈米結構為主之透明導體及包含其之裝置
FR2955207B1 (fr) * 2010-01-08 2012-02-10 Saint Gobain Technical Fabrics Dispositif collecteur de rayonnement

Also Published As

Publication number Publication date
WO2012038591A1 (en) 2012-03-29

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Legal Events

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