FI20031653A0 - Method and semiconductor substrate for moving a pattern from a phase mask to a substrate - Google Patents

Method and semiconductor substrate for moving a pattern from a phase mask to a substrate

Info

Publication number
FI20031653A0
FI20031653A0 FI20031653A FI20031653A FI20031653A0 FI 20031653 A0 FI20031653 A0 FI 20031653A0 FI 20031653 A FI20031653 A FI 20031653A FI 20031653 A FI20031653 A FI 20031653A FI 20031653 A0 FI20031653 A0 FI 20031653A0
Authority
FI
Finland
Prior art keywords
substrate
pattern
moving
phase mask
semiconductor substrate
Prior art date
Application number
FI20031653A
Other languages
Finnish (fi)
Swedish (sv)
Other versions
FI20031653A (en
Inventor
Tomi Ryynaenen
Petri Melanen
Pekka Savolainen
Original Assignee
Modulight Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Modulight Inc filed Critical Modulight Inc
Priority to FI20031653A priority Critical patent/FI20031653A/en
Publication of FI20031653A0 publication Critical patent/FI20031653A0/en
Priority to PCT/FI2004/000677 priority patent/WO2005048338A1/en
Publication of FI20031653A publication Critical patent/FI20031653A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
FI20031653A 2003-11-13 2003-11-13 Method and semiconductor substrate for moving a pattern from a phase mask to a substrate FI20031653A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FI20031653A FI20031653A (en) 2003-11-13 2003-11-13 Method and semiconductor substrate for moving a pattern from a phase mask to a substrate
PCT/FI2004/000677 WO2005048338A1 (en) 2003-11-13 2004-11-12 A method and a semiconductor substrate for transferring a pattern from a phase mask to a substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20031653A FI20031653A (en) 2003-11-13 2003-11-13 Method and semiconductor substrate for moving a pattern from a phase mask to a substrate

Publications (2)

Publication Number Publication Date
FI20031653A0 true FI20031653A0 (en) 2003-11-13
FI20031653A FI20031653A (en) 2005-05-14

Family

ID=29558624

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20031653A FI20031653A (en) 2003-11-13 2003-11-13 Method and semiconductor substrate for moving a pattern from a phase mask to a substrate

Country Status (2)

Country Link
FI (1) FI20031653A (en)
WO (1) WO2005048338A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102445158B (en) * 2011-09-23 2013-11-27 清华大学 Method for manufacturing high-temperature speckles
CN103837919B (en) * 2014-03-06 2016-03-09 成都贝思达光电科技有限公司 A kind of optical grating construction color filter film job operation based on double-layer glue nano impression
CN111509073B (en) * 2019-05-30 2022-09-20 中国科学院长春光学精密机械与物理研究所 Preparation method of flexible photoelectric detector and flexible photoelectric detector
CN118249202A (en) * 2024-03-26 2024-06-25 睿创光子(无锡)技术有限公司 Inter-band cascade laser and manufacturing method thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6380067B1 (en) * 2000-05-31 2002-04-30 Advanced Micro Devices, Inc. Method for creating partially UV transparent anti-reflective coating for semiconductors
US20020139771A1 (en) * 2001-02-22 2002-10-03 Ping Jiang Gas switching during an etch process to modulate the characteristics of the etch

Also Published As

Publication number Publication date
FI20031653A (en) 2005-05-14
WO2005048338A1 (en) 2005-05-26

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Legal Events

Date Code Title Description
MA Patent expired