FI123170B - Järjestely substraatin käsittelemiseksi sekä asennusalusta substraattia varten - Google Patents
Järjestely substraatin käsittelemiseksi sekä asennusalusta substraattia varten Download PDFInfo
- Publication number
- FI123170B FI123170B FI20095578A FI20095578A FI123170B FI 123170 B FI123170 B FI 123170B FI 20095578 A FI20095578 A FI 20095578A FI 20095578 A FI20095578 A FI 20095578A FI 123170 B FI123170 B FI 123170B
- Authority
- FI
- Finland
- Prior art keywords
- substrates
- substrate
- treating
- mounting plate
- carrier
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
Abstract
Keksintö liittyy järjestelyyn substraatin käsittelemiseksi kaasukasvatuslaitteistossa altistamalla substraatti vuoroittaisille lähtöaineiden pintareaktioille, joka järjestely käsittää latausvälineet substraatin lataamiseksi kaasukasvatuslaitteistoon substraatin kannattimella. Keksinnön mukaisesti substraatti on sovitettu kiinnitettäväksi irrotettavasti substraatin kannattimeen liima-aineen avulla.
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20095578A FI123170B (fi) | 2009-05-26 | 2009-05-26 | Järjestely substraatin käsittelemiseksi sekä asennusalusta substraattia varten |
US13/318,919 US20120055407A1 (en) | 2009-05-26 | 2010-05-21 | Arrangement for processing substrate and substrate carrier |
EP10726140.6A EP2435597B1 (en) | 2009-05-26 | 2010-05-21 | Arrangement for processing substrate and substrate carrier |
PCT/FI2010/050408 WO2010136644A1 (en) | 2009-05-26 | 2010-05-21 | Arrangement for processing substrate and substrate carrier |
CN201080022843.1A CN102449189B (zh) | 2009-05-26 | 2010-05-21 | 用来处理基质的装置和基质载体 |
TW099116633A TWI500808B (zh) | 2009-05-26 | 2010-05-25 | 製程基板的配置及基板載具 |
US15/613,532 US20170268106A1 (en) | 2009-05-26 | 2017-06-05 | Arrangement for processing substrate and substrate carrier |
US16/298,207 US20190203356A1 (en) | 2009-05-26 | 2019-03-11 | Arrangement for processing substrate and substrate carrier |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20095578A FI123170B (fi) | 2009-05-26 | 2009-05-26 | Järjestely substraatin käsittelemiseksi sekä asennusalusta substraattia varten |
Publications (3)
Publication Number | Publication Date |
---|---|
FI20095578A0 FI20095578A0 (fi) | 2009-05-26 |
FI20095578A FI20095578A (fi) | 2010-11-27 |
FI123170B true FI123170B (fi) | 2012-11-30 |
Family
ID=40680757
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI20095578A FI123170B (fi) | 2009-05-26 | 2009-05-26 | Järjestely substraatin käsittelemiseksi sekä asennusalusta substraattia varten |
Country Status (6)
Country | Link |
---|---|
US (3) | US20120055407A1 (fi) |
EP (1) | EP2435597B1 (fi) |
CN (1) | CN102449189B (fi) |
FI (1) | FI123170B (fi) |
TW (1) | TWI500808B (fi) |
WO (1) | WO2010136644A1 (fi) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI491755B (zh) * | 2011-12-13 | 2015-07-11 | 聯華電子股份有限公司 | 基材載具及其應用 |
WO2014191622A1 (en) * | 2013-05-29 | 2014-12-04 | Beneq Oy | Barrier, carrier arrangement and method for preventing material growth |
US9499908B2 (en) * | 2015-02-13 | 2016-11-22 | Eastman Kodak Company | Atomic layer deposition apparatus |
FI3733928T3 (fi) * | 2019-03-29 | 2023-04-03 | Picosun Oy | Näytteensuojus |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3602192A (en) * | 1969-05-19 | 1971-08-31 | Ibm | Semiconductor wafer processing |
US3814051A (en) * | 1972-11-29 | 1974-06-04 | L Lewison | Contact lens and apparatus for producing same |
US4610748A (en) * | 1984-12-10 | 1986-09-09 | Advanced Semiconductor Materials Of America, Inc. | Apparatus for processing semiconductor wafers or the like |
US5618388A (en) * | 1988-02-08 | 1997-04-08 | Optical Coating Laboratory, Inc. | Geometries and configurations for magnetron sputtering apparatus |
US4949669A (en) * | 1988-12-20 | 1990-08-21 | Texas Instruments Incorporated | Gas flow systems in CCVD reactors |
US5122391A (en) * | 1991-03-13 | 1992-06-16 | Watkins-Johnson Company | Method for producing highly conductive and transparent films of tin and fluorine doped indium oxide by APCVD |
JP3571785B2 (ja) * | 1993-12-28 | 2004-09-29 | キヤノン株式会社 | 堆積膜形成方法及び堆積膜形成装置 |
JP3081122B2 (ja) * | 1994-07-18 | 2000-08-28 | シャープ株式会社 | 基板搬送用治具及びそれを用いた液晶表示素子の製造方法 |
US5972152A (en) * | 1997-05-16 | 1999-10-26 | Micron Communications, Inc. | Methods of fixturing flexible circuit substrates and a processing carrier, processing a flexible circuit and processing a flexible circuit substrate relative to a processing carrier |
TW462946B (en) * | 2000-04-21 | 2001-11-11 | Ritdisplay Corp | Substrate transfer method of OLED process |
US6867539B1 (en) * | 2000-07-12 | 2005-03-15 | 3M Innovative Properties Company | Encapsulated organic electronic devices and method for making same |
US20030207093A1 (en) * | 2001-12-03 | 2003-11-06 | Toshio Tsuji | Transparent conductive layer forming method, transparent conductive layer formed by the method, and material comprising the layer |
WO2004105149A1 (en) * | 2003-05-16 | 2004-12-02 | E.I. Dupont De Nemours And Company | Barrier films for plastic substrates fabricated by atomic layer deposition |
US7041579B2 (en) * | 2003-10-22 | 2006-05-09 | Northrop Grumman Corporation | Hard substrate wafer sawing process |
US8227019B2 (en) * | 2003-12-15 | 2012-07-24 | Superpower Inc. | High-throughput ex-situ method for rare-earth-barium-copper-oxide (REBCO) film growth |
US8304019B1 (en) * | 2004-02-19 | 2012-11-06 | Nanosolar Inc. | Roll-to-roll atomic layer deposition method and system |
US8628622B2 (en) * | 2005-09-12 | 2014-01-14 | Cree, Inc. | Gas driven rotation apparatus and method for forming crystalline layers |
US7976899B2 (en) * | 2006-10-23 | 2011-07-12 | General Electric Company | Methods for selective deposition of graded materials on continuously fed objects |
ES2336870B1 (es) * | 2007-08-20 | 2011-02-18 | Novogenio, S.L. | Sistema y procedimiento para el recubrimiento en vacio y en continuo de un material en forma de banda. |
KR101420285B1 (ko) * | 2008-01-09 | 2014-07-17 | 삼성전자주식회사 | 반도체 제조설비 그의 웨이퍼 로딩/언로딩 방법 |
-
2009
- 2009-05-26 FI FI20095578A patent/FI123170B/fi active IP Right Grant
-
2010
- 2010-05-21 WO PCT/FI2010/050408 patent/WO2010136644A1/en active Application Filing
- 2010-05-21 CN CN201080022843.1A patent/CN102449189B/zh active Active
- 2010-05-21 EP EP10726140.6A patent/EP2435597B1/en active Active
- 2010-05-21 US US13/318,919 patent/US20120055407A1/en not_active Abandoned
- 2010-05-25 TW TW099116633A patent/TWI500808B/zh active
-
2017
- 2017-06-05 US US15/613,532 patent/US20170268106A1/en not_active Abandoned
-
2019
- 2019-03-11 US US16/298,207 patent/US20190203356A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
FI20095578A (fi) | 2010-11-27 |
EP2435597A1 (en) | 2012-04-04 |
US20190203356A1 (en) | 2019-07-04 |
US20170268106A1 (en) | 2017-09-21 |
EP2435597B1 (en) | 2018-10-17 |
TW201109466A (en) | 2011-03-16 |
CN102449189A (zh) | 2012-05-09 |
WO2010136644A1 (en) | 2010-12-02 |
CN102449189B (zh) | 2016-02-10 |
FI20095578A0 (fi) | 2009-05-26 |
US20120055407A1 (en) | 2012-03-08 |
TWI500808B (zh) | 2015-09-21 |
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