ES8606523A1 - Technique for the growth of epitaxial compound semiconductor films. - Google Patents

Technique for the growth of epitaxial compound semiconductor films.

Info

Publication number
ES8606523A1
ES8606523A1 ES548358A ES548358A ES8606523A1 ES 8606523 A1 ES8606523 A1 ES 8606523A1 ES 548358 A ES548358 A ES 548358A ES 548358 A ES548358 A ES 548358A ES 8606523 A1 ES8606523 A1 ES 8606523A1
Authority
ES
Spain
Prior art keywords
technique
compound semiconductor
semiconductor films
growth
epitaxial compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES548358A
Other languages
Spanish (es)
Other versions
ES548358A0 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Iconectiv LLC
Original Assignee
Bell Communications Research Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bell Communications Research Inc filed Critical Bell Communications Research Inc
Publication of ES548358A0 publication Critical patent/ES548358A0/en
Publication of ES8606523A1 publication Critical patent/ES8606523A1/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A technique for the deposition of group III-V compound semiconductor films in epitaxial form wherein the group V source material employed is in solid elemental or compound form. The prime advantage of such technique resides in the elimination of the need for the highly toxic arsine gas for this purpose while permitting the preparation of a product essentially free of contamination.
ES548358A 1984-10-31 1985-10-30 Technique for the growth of epitaxial compound semiconductor films. Expired ES8606523A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US66683184A 1984-10-31 1984-10-31

Publications (2)

Publication Number Publication Date
ES548358A0 ES548358A0 (en) 1986-04-16
ES8606523A1 true ES8606523A1 (en) 1986-04-16

Family

ID=24675668

Family Applications (1)

Application Number Title Priority Date Filing Date
ES548358A Expired ES8606523A1 (en) 1984-10-31 1985-10-30 Technique for the growth of epitaxial compound semiconductor films.

Country Status (5)

Country Link
EP (1) EP0199736A1 (en)
JP (1) JPS62500695A (en)
CA (1) CA1250511A (en)
ES (1) ES8606523A1 (en)
WO (1) WO1986002776A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4740606A (en) * 1986-07-01 1988-04-26 Morton Thiokol, Inc. Gallium hydride/trialkylamine adducts, and their use in deposition of III-V compound films
US4792467A (en) * 1987-08-17 1988-12-20 Morton Thiokol, Inc. Method for vapor phase deposition of gallium nitride film

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2075325A5 (en) * 1970-01-09 1971-10-08 Hitachi Ltd

Also Published As

Publication number Publication date
JPS62500695A (en) 1987-03-19
ES548358A0 (en) 1986-04-16
WO1986002776A1 (en) 1986-05-09
CA1250511A (en) 1989-02-28
EP0199736A1 (en) 1986-11-05

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