ES373516A1 - Disposicion de circuito para la recepcion de senales elec- tricas de radio-frecuencia. - Google Patents

Disposicion de circuito para la recepcion de senales elec- tricas de radio-frecuencia.

Info

Publication number
ES373516A1
ES373516A1 ES373516A ES373516A ES373516A1 ES 373516 A1 ES373516 A1 ES 373516A1 ES 373516 A ES373516 A ES 373516A ES 373516 A ES373516 A ES 373516A ES 373516 A1 ES373516 A1 ES 373516A1
Authority
ES
Spain
Prior art keywords
diode
gate
variable capacity
parasitic
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES373516A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES373516A1 publication Critical patent/ES373516A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B15/00—Suppression or limitation of noise or interference
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
    • H03G1/0029—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier using FETs
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/10—Means associated with receiver for limiting or suppressing noise or interference

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
  • Noise Elimination (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
ES373516A 1968-11-16 1969-11-14 Disposicion de circuito para la recepcion de senales elec- tricas de radio-frecuencia. Expired ES373516A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6816386A NL6816386A (es) 1968-11-16 1968-11-16

Publications (1)

Publication Number Publication Date
ES373516A1 true ES373516A1 (es) 1972-02-01

Family

ID=19805173

Family Applications (1)

Application Number Title Priority Date Filing Date
ES373516A Expired ES373516A1 (es) 1968-11-16 1969-11-14 Disposicion de circuito para la recepcion de senales elec- tricas de radio-frecuencia.

Country Status (7)

Country Link
BE (1) BE741744A (es)
BR (1) BR6914164D0 (es)
DE (1) DE1955636A1 (es)
ES (1) ES373516A1 (es)
FR (1) FR2023486A1 (es)
GB (1) GB1273594A (es)
NL (1) NL6816386A (es)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3997852A (en) * 1975-06-06 1976-12-14 Motorola, Inc. RF amplifier

Also Published As

Publication number Publication date
BR6914164D0 (pt) 1973-02-22
FR2023486A1 (es) 1970-08-21
DE1955636A1 (de) 1970-06-18
BE741744A (es) 1970-05-14
GB1273594A (en) 1972-05-10
NL6816386A (es) 1970-05-20

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