Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Texas Instruments Inc
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Texas Instruments Inc
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Application filed by Texas Instruments IncfiledCriticalTexas Instruments Inc
Publication of ES367322A1publicationCriticalpatent/ES367322A1/en
Internal Circuitry In Semiconductor Integrated Circuit Devices
(AREA)
Abstract
A semiconductor device, comprising a metal layer that makes ohmic contact with a semiconductor surface portion of said semiconductor device, said metal layer comprising a mixture of tungsten and a modifying metal having a corrosión resistance greater than tungsten. (Machine-translation by Google Translate, not legally binding)
ES367322A1968-05-171969-05-16A semiconductor device. (Machine-translation by Google Translate, not legally binding)
ExpiredES367322A1
(en)
Semiconductor device that has a plurality of circuit elements formed on the semiconductor body. (Machine-translation by Google Translate, not legally binding)